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Bonding states and electrical properties of ultrathin HfOxNy gate dielectrics

Applied physics letters, 2002-09, Vol.81 (14), p.2593-2595

2002

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Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application

Applied physics letters, 2000-11, Vol.77 (20), p.3269-3271

2000

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Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing

Applied physics letters, 2000-04, Vol.76 (14), p.1926-1928

2000

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Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric

IEEE electron device letters, 2000-04, Vol.21 (4), p.181-183

2000

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Bias-temperature instabilities of polysilicon gate HfO2 MOSFETs

IEEE transactions on electron devices, 2003-06, Vol.50 (6), p.1517

2003

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Nickel silicidation techniques for strained Si1-xGex, Si1-x-yGexCy, and Si1-yCy alloys material-device applications

Journal of electronic materials, 2003-03, Vol.32 (3), p.184-190

2003

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Improvement of surface carrier mobility of HfO2 MOSFETs by high-temperature forming gas annealing

IEEE transactions on electron devices, 2003-02, Vol.50 (2), p.384-390

2003

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Ultrathin zirconium silicate film with good thermal stability for alternative gate dielectric application

Applied physics letters, 2000-09, Vol.77 (11), p.1704-1706

2000

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Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing

IEEE transactions on electron devices, 2003-02, Vol.50 (2), p.333-340

2003

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Evaluation of silicon surface nitridation effects on ultra-thin ZrO2 gate dielectrics

Applied physics letters, 2002-08, Vol.81 (9), p.1663-1665

2002

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Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric application

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), 1999, p.133-136

1999

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Structural and electrical properties of HfO2 with top nitrogen incorporated layer

IEEE electron device letters, 2002-05, Vol.23 (5), p.249-251

2002

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Voltage- and temperature-dependent gate capacitance and current model: application to ZrO2 n-channel MOS capacitor

IEEE transactions on electron devices, 2002-11, Vol.49 (11), p.1969-1978

2002

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Area dependence of TDDB characteristics for HfO2 gate dielectrics

IEEE electron device letters, 2002-10, Vol.23 (10), p.594-596

2002

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Structural and electrical properties of HfO sub(2) with top nitrogen incorporated layer

IEEE electron device letters, 2002-05, Vol.23 (5), p.249-251

2002

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An evaluation of the electrical, material, and reliability characteristics and process viability of zirconium oxide and nitrogen-incorporated zirconium oxide for future generation MOS gate dielectric

Nieh, Renee Elizabeth

2002

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Ultra-Thin Zirconium Silicate Filmsc With Good Physical And Electrical Properties For Gate Dielectric Applications

MRS proceedings, 2000, Vol.648, Article P6.16

2000

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Charging effects on reliability of HfO2 devices with polysilicon gate electrode

2002

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Highly Reliable Thin Hafnium Oxide Gate Dielectric

MRS proceedings, 2000, Vol.592, Article 81

2000

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Study on ZrO 2 Deposited Directly on Si as an Alternative Gate Dielectric Material

MRS proceedings, 1999, Vol.606, Article 263

1999

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Study on ZrO2 Deposited Directly on Si as an Alternative Gate Dielectric Material

MRS proceedings, 1999, Vol.606

1999

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Nitrogen (N2) Implantation to Suppress Growth of Interfacial Oxide in Mocvd Bst and Sputtered Bst Films

MRS proceedings, 1999, Vol.567, Article 521

1999

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A Study on Hysteresis Effect of Barium Strontium Titanate Thin Films for Alternative Gate Dielectric Application

MRS proceedings, 1999, Vol.606, Article 269

1999

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Effects of high-temperature forming gas anneal on HfO2 mosfet performance

2002

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Fabrication of high quality ultra-thin HfO2 gate dielectric MOSFETs using deuterium anneal

2002

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Bonding states and electrical properties of ultrathin HfOxNy gate dielectrics

Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application

Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing

Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric

Bias-temperature instabilities of polysilicon gate HfO2 MOSFETs

Nickel silicidation techniques for strained Si1-xGex, Si1-x-yGexCy, and Si1-yCy alloys material-device applications

Improvement of surface carrier mobility of HfO2 MOSFETs by high-temperature forming gas annealing

Ultrathin zirconium silicate film with good thermal stability for alternative gate dielectric application

Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing

Evaluation of silicon surface nitridation effects on ultra-thin ZrO2 gate dielectrics

Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric application

Structural and electrical properties of HfO2 with top nitrogen incorporated layer

Voltage- and temperature-dependent gate capacitance and current model: application to ZrO2 n-channel MOS capacitor

Area dependence of TDDB characteristics for HfO2 gate dielectrics

Structural and electrical properties of HfO sub(2) with top nitrogen incorporated layer

An evaluation of the electrical, material, and reliability characteristics and process viability of zirconium oxide and nitrogen-incorporated zirconium oxide for future generation MOS gate dielectric

Ultra-Thin Zirconium Silicate Filmsc With Good Physical And Electrical Properties For Gate Dielectric Applications

Charging effects on reliability of HfO2 devices with polysilicon gate electrode

Highly Reliable Thin Hafnium Oxide Gate Dielectric

Study on ZrO 2 Deposited Directly on Si as an Alternative Gate Dielectric Material

Study on ZrO2 Deposited Directly on Si as an Alternative Gate Dielectric Material

Nitrogen (N2) Implantation to Suppress Growth of Interfacial Oxide in Mocvd Bst and Sputtered Bst Films

A Study on Hysteresis Effect of Barium Strontium Titanate Thin Films for Alternative Gate Dielectric Application

Effects of high-temperature forming gas anneal on HfO2 mosfet performance

Fabrication of high quality ultra-thin HfO2 gate dielectric MOSFETs using deuterium anneal

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