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Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy

Journal of electronic materials, 1998-04, Vol.27 (4), p.292-295

1998

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High Quality 6H- and 4H-SiC pn Structures with Stable Electric Breakdown Grown by Liquid Phase Epitaxy

Materials science forum, 1998-01, Vol.264-268, p.163-166

1998

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High-dose Al-implanted 4H-SiC p+-n-n+ junctions

Applied physics letters, 2000-11, Vol.77 (19), p.3051-3053

2000

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Micropipe Healing in Liquid Phase Epitaxial Growth of SiC

Materials science forum, 2000-01, Vol.338-342, p.237-240

2000

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Structural, electrical, and optical properties of low-doped 4H–SiC chemical vapor deposited epitaxial layers

Journal of applied physics, 2001-11, Vol.90 (10), p.5402-5409

2001

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Material quality improvements for high voltage 4H-SiC diodes

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-03, Vol.80 (1), p.337-341

2001

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Large area silicon carbide devices fabricated on SiC wafers with reduced micropipe density

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-07, Vol.61, p.446-449

1999

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GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layers

Journal of electronic materials, 1998-04, Vol.27 (4), p.288-291

1998

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TEM investigation of silicon carbide wafers with reduced micropipe density

Journal of electronic materials, 2000-03, Vol.29 (3), p.364-367

2000

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4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates

Materials science forum, 2000-05, Vol.338-342, p.229-232, Article 229

2000

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Silicon carbide CVD homoepitaxy on wafers with reduced micropipe density

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-07, Vol.61, p.158-160

1999

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4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density

Materials science forum, 2000-05, Vol.338-342, p.505-508

2000

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Annealing of Ion Implantation Damage in SiC Using a Graphite Mask

MRS proceedings, 1999, Vol.572, Article 45

1999

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Silicon Carbide Epitaxial Layers Grown ON SiC Wafers With Reduced Micropipe Density

MRS proceedings, 1998, Vol.512, Article 131

1998

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SiC liquid-phase epitaxy on patterned substrates

Journal of crystal growth, 1996-09, Vol.166 (1-4), p.607-611

1996

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Structural Investigation on the Nature of Surface Defects Present in Silicon Carbide Wafers Containing Varying Amount of Micropipes

Materials science forum, 2000-05, Vol.338-342, p.453-456

2000

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Electrical characteristics and structural properties of ohmic contacts to p-type 4H-SiC epitaxial layers

Semiconductors (Woodbury, N.Y.), 1999-11, Vol.33 (11), p.1206-1211

1999

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TEM INVESTIGATIONS OF SILICON CARBIDE WAFERS WITH REDUCED MICROPIPE DENSITY

Journal of electronic materials, 2000-01, Vol.29 (3), p.364-367

2000

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SiC epitaxial growth on porous SiC substrates

MRS proceedings, 2000, Vol.622, Article T4.2.1

2000

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Gan grown by hydride vapor phase epitaxy on p-type 6H-SiC layers : III-V nitrides and silicon carbide

Journal of electronic materials, 1998, Vol.27 (4), p.288-291

1998

Volltextzugriff (PDF)

Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy : III-V nitrides and silicon carbide

Journal of electronic materials, 1998, Vol.27 (4), p.292-295

1998

Volltextzugriff (PDF)

Defect Evolution in 4H-SiC Sublimation Epi-Layers Grown on LPE Buffers with Reduced Micropipe Density

MRS proceedings, 2000, Vol.640, Article H2.1

2000

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Material quality improvements for high voltage 4H-SiC diodes

Materials science & engineering. B, Solid-state materials for advanced technology, 2001, Vol.80 (1-3), p.337-341

2001

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Large area silicon carbide devices fabricated on SiC wafers with reduced micropipe density

Materials science & engineering. B, Solid-state materials for advanced technology, 1999, Vol.61-62, p.446-449

1999

Volltextzugriff (PDF)

Silicon carbide CVD homoepitaxy on wafers with reduced micropipe density

Materials science & engineering. B, Solid-state materials for advanced technology, 1999, Vol.61-62, p.158-160

1999

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Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy

High Quality 6H- and 4H-SiC pn Structures with Stable Electric Breakdown Grown by Liquid Phase Epitaxy

High-dose Al-implanted 4H-SiC p+-n-n+ junctions

Micropipe Healing in Liquid Phase Epitaxial Growth of SiC

Structural, electrical, and optical properties of low-doped 4H–SiC chemical vapor deposited epitaxial layers

Material quality improvements for high voltage 4H-SiC diodes

Large area silicon carbide devices fabricated on SiC wafers with reduced micropipe density

GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layers

TEM investigation of silicon carbide wafers with reduced micropipe density

4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates

Silicon carbide CVD homoepitaxy on wafers with reduced micropipe density

4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density

Annealing of Ion Implantation Damage in SiC Using a Graphite Mask

Silicon Carbide Epitaxial Layers Grown ON SiC Wafers With Reduced Micropipe Density

SiC liquid-phase epitaxy on patterned substrates

Structural Investigation on the Nature of Surface Defects Present in Silicon Carbide Wafers Containing Varying Amount of Micropipes

Electrical characteristics and structural properties of ohmic contacts to p-type 4H-SiC epitaxial layers

TEM INVESTIGATIONS OF SILICON CARBIDE WAFERS WITH REDUCED MICROPIPE DENSITY

SiC epitaxial growth on porous SiC substrates

Gan grown by hydride vapor phase epitaxy on p-type 6H-SiC layers : III-V nitrides and silicon carbide

Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy : III-V nitrides and silicon carbide

Defect Evolution in 4H-SiC Sublimation Epi-Layers Grown on LPE Buffers with Reduced Micropipe Density

Material quality improvements for high voltage 4H-SiC diodes

Large area silicon carbide devices fabricated on SiC wafers with reduced micropipe density

Silicon carbide CVD homoepitaxy on wafers with reduced micropipe density

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