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Seeding layer assisted selective-area growth of As-rich InAsP nanowires on InP substrates

Nanoscale, 2017-06, Vol.9 (24), p.8220-8228

2017

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Energy‐Sensitive GaSb/AlAsSb Separate Absorption and Multiplication Avalanche Photodiodes for X‐Ray and Gamma‐Ray Detection

Advanced optical materials, 2019-06, Vol.7 (11), p.n/a

2019

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Optical Characterization of AlAsSb Digital Alloy and Random Alloy on GaSb

Crystals (Basel), 2017-10, Vol.7 (10), p.313

2017

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Feasibility of Tracking Multiple Single-Cell Properties with Impedance Spectroscopy

ACS sensors, 2018-05, Vol.3 (5), p.1005-1015

2018

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Room-Temperature Midwavelength Infrared InAsSb Nanowire Photodetector Arrays with Al 2 O 3 Passivation

Nano letters, 2019-05, Vol.19 (5), p.2793-2802

2019

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Room-Temperature Midwavelength Infrared InAsSb Nanowire Photodetector Arrays with Al2O3 Passivation

Nano letters, 2019-05, Vol.19 (5), p.2793-2802

2019

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Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium

Nanotechnology, 2018-02, Vol.29 (8), p.085601-085601

2018

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High-efficiency ultrafast optical-to-electrical converters based on InAs nanowire-plasmonic arrays

Optics letters, 2019-10, Vol.44 (19), p.4666

2019

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Uncooled Photodetector at Short-Wavelength Infrared Using InAs Nanowire Photoabsorbers on InP with p–n Heterojunctions

Nano letters, 2018-12, Vol.18 (12), p.7901-7908

2018

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InGaAs–GaAs Nanowire Avalanche Photodiodes Toward Single-Photon Detection in Free-Running Mode

Nano letters, 2019-01, Vol.19 (1), p.582-590

2019

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Feasibility of achieving high detectivity at short- and mid-wavelength infrared using nanowire-plasmonic photodetectors with p-n heterojunctions

Nanotechnology, 2019-01, Vol.30 (4), p.044002-044002

2019

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Lateral carrier transfer for high density InGaAs/GaAs surface quantum dots

Journal of luminescence, 2020-02, Vol.218, p.116870, Article 116870

2020

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A three-dimensional insight into correlation between carrier lifetime and surface recombination velocity for nanowires

Nanotechnology, 2018-12, Vol.29 (50), p.504003-504003

2018

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Seeding layer assisted selective-area growth of As-rich InAsP nanowires on InP substratesElectronic supplementary information (ESI) available: Additional figures related to the growth. See DOI: 10.1039/c7nr00948h

2017-06

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Nanowire Optoelectronics at Infrared: Modeling, Epitaxy, and Devices

Ren, Dingkun

2018

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ProQuest

Self-assembly of tensile-strained Ge quantum dots on InAlAs(111)A

Journal of crystal growth, 2020-03, Vol.533, p.125468, Article 125468

2020

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Exploring time-resolved photoluminescence for nanowires using a three-dimensional computational transient model

Nanoscale, 2018-04, Vol.10 (16), p.7792-7802

2018

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Significant suppression of surface leakage in GaSb/AlAsSb heterostructure with Al 2 O 3 passivation

Japanese Journal of Applied Physics, 2019-09, Vol.58 (9), p.90907

2019

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Exploring time-resolved photoluminescence for nanowires using a three-dimensional computational transient modelElectronic supplementary information (ESI) available: Additional information related to the experiments and simulations. See DOI: 10.1039/c8nr01908h

2018-04

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Axial InAs(Sb) inserts in selective-area InAsP nanowires on InP for optoelectronics beyond 25 µm

Optical materials express, 2018-04, Vol.8 (4), p.1075

2018

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Selective-area InAsSb Nanowires on InP for 3 – 5 μm Mid-wavelength Infrared Optoelectronics

MRS Advances, 2017-01, Vol.2 (58-59), p.3565-3570

2017

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Significant suppression of surface leakage in GaSb/AlAsSb heterostructure with Al2O3 passivation

Japanese Journal of Applied Physics, 2019-09, Vol.58 (9), p.1

2019

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Inducing Electrically-Active Defects in a Gallium Arsenide Nanowire with an Electron Beam

Microscopy and microanalysis, 2019-08, Vol.25 (S2), p.1618-1619

2019

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Modeling of Electronic Cell-Substrate Impedance Sensing for Single Cell

Ren, Dingkun

2013

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ProQuest

High-Power Terahertz Generation from Telecommunication-Compatible, Bias-Free Photoconductive Nano-Antennas

2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2018, p.1-2

2018

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Seeding layer assisted selective-area growth of As-rich InAsP nanowires on InP substrates

Energy‐Sensitive GaSb/AlAsSb Separate Absorption and Multiplication Avalanche Photodiodes for X‐Ray and Gamma‐Ray Detection

Optical Characterization of AlAsSb Digital Alloy and Random Alloy on GaSb

Feasibility of Tracking Multiple Single-Cell Properties with Impedance Spectroscopy

Room-Temperature Midwavelength Infrared InAsSb Nanowire Photodetector Arrays with Al 2 O 3 Passivation

Room-Temperature Midwavelength Infrared InAsSb Nanowire Photodetector Arrays with Al2O3 Passivation

Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium

High-efficiency ultrafast optical-to-electrical converters based on InAs nanowire-plasmonic arrays

Uncooled Photodetector at Short-Wavelength Infrared Using InAs Nanowire Photoabsorbers on InP with p–n Heterojunctions

InGaAs–GaAs Nanowire Avalanche Photodiodes Toward Single-Photon Detection in Free-Running Mode

Feasibility of achieving high detectivity at short- and mid-wavelength infrared using nanowire-plasmonic photodetectors with p-n heterojunctions

Lateral carrier transfer for high density InGaAs/GaAs surface quantum dots

A three-dimensional insight into correlation between carrier lifetime and surface recombination velocity for nanowires

Seeding layer assisted selective-area growth of As-rich InAsP nanowires on InP substratesElectronic supplementary information (ESI) available: Additional figures related to the growth. See DOI: 10.1039/c7nr00948h

Nanowire Optoelectronics at Infrared: Modeling, Epitaxy, and Devices

Self-assembly of tensile-strained Ge quantum dots on InAlAs(111)A

Exploring time-resolved photoluminescence for nanowires using a three-dimensional computational transient model

Significant suppression of surface leakage in GaSb/AlAsSb heterostructure with Al 2 O 3 passivation

Exploring time-resolved photoluminescence for nanowires using a three-dimensional computational transient modelElectronic supplementary information (ESI) available: Additional information related to the experiments and simulations. See DOI: 10.1039/c8nr01908h

Axial InAs(Sb) inserts in selective-area InAsP nanowires on InP for optoelectronics beyond 25 µm

Selective-area InAsSb Nanowires on InP for 3 – 5 μm Mid-wavelength Infrared Optoelectronics

Significant suppression of surface leakage in GaSb/AlAsSb heterostructure with Al2O3 passivation

Inducing Electrically-Active Defects in a Gallium Arsenide Nanowire with an Electron Beam

Modeling of Electronic Cell-Substrate Impedance Sensing for Single Cell

High-Power Terahertz Generation from Telecommunication-Compatible, Bias-Free Photoconductive Nano-Antennas

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