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Intraband carrier relaxation in mid-infrared (3–4 μm) HgCdTe based structures: Effect of the carrier heating on the operating temperatures of bulk and quantum-well lasers

Journal of applied physics, 2023-02, Vol.133 (7)

2023

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Toward Peltier-cooled mid-infrared HgCdTe lasers: Analyzing the temperature quenching of stimulated emission at ∼6 μm wavelength from HgCdTe quantum wells

Journal of applied physics, 2021-12, Vol.130 (21)

2021

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Optical and Structural Properties of Hg0.7Cd0.3Te Epitaxial Films

Semiconductors (Woodbury, N.Y.), 2023-12, Vol.57 (12), p.519-523

2023

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Optical Studies of Molecular-Beam Epitaxy-Grown Hg1−xCdxTe with x = 0.7–0.8

Journal of electronic materials, 2020-08, Vol.49 (8), p.4642-4646

2020

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Energy Position of the Size Quantization Levels in Multiple HgCdTe Quantum Wells

Bulletin of the Russian Academy of Sciences. Physics, 2023-06, Vol.87 (6), p.755-759

2023

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Parametric Model of the Optical Constant Spectra of Hg1 – xCdxTe and Determination of the Compound Composition

Optics and spectroscopy, 2020-12, Vol.128 (12), p.1948-1953

2020

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Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis

Semiconductor science and technology, 2019-03, Vol.34 (3), p.35009

2019

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Optical studies of wide-bandgap HgCdTe material used in potential-and quantum-well structures

Journal of physics. Conference series, 2020-03, Vol.1482 (1), p.12002

2020

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Optical and Structural Properties of HgCdTe Solid Solutions with a High CdTe Content

Semiconductors (Woodbury, N.Y.), 2020-12, Vol.54 (12), p.1561-1566

2020

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Strong Disorder in HgCdTe Studied with Optical Methods and X-Ray Diffraction

Journal of physics. Conference series, 2019-11, Vol.1400 (6), p.66038

2019

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HgCdTe-Based 640 x 512 Matrix Midwave Infrared Photodetector

Journal of communications technology & electronics, 2020-03, Vol.65 (3), p.316

2020

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Distribution profiles of radiation donor defects in arsenic-implanted HgCdTe films

Journal of physics. Conference series, 2018-11, Vol.1115 (3), p.32063

2018

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HgCdTe-Based 640 × 512 Matrix Midwave Infrared Photodetector

Journal of communications technology & electronics, 2020-03, Vol.65 (3), p.316-320

2020

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A Megapixel Matrix Photodetector of the Middle Infrared Range

Journal of communications technology & electronics, 2019-09, Vol.64 (9), p.1011-1015

2019

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An Optical Study of Disordering in Cadmium Mercury Telluride Solid Solutions

Technical physics letters, 2019-06, Vol.45 (6), p.553-556

2019

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Localization and Nature of Radiation Donor Defects in the Arsenic Implanted Cdhgte Films Grown by MBE

Russian physics journal, 2020-06, Vol.63 (2), p.290-295

2020

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Methodological and instrumental problems in high-precision in situ ellipsometry diagnostics of the mercury cadmium telluride layer composition in molecular beam epitaxy

Instruments and experimental techniques (New York), 2016-11, Vol.59 (6), p.857-864

2016

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Structural and optical properties of noncentrosymmetric quaternary crystal AgCd2GaS4

Journal of crystal growth, 2006-07, Vol.292 (2), p.494-499

2006

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Optical properties of molecular beam epitaxy-grown HgCdTe structures with potential wells

Physica status solidi. C, 2010-06, Vol.7 (6), p.1621-1623

2010

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Effect of post-implantation anneal on the current-voltage characteristics of IR photodiodes based on p-CdxHg1-xTe

Physica status solidi. C, 2010-06, Vol.7 (6), p.1627-1629

2010

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Photodiodes based on p-on-n junctions formed in MBE-grown n-type MCT absorber layers for the spectral region 8 to 11 μm

Infrared physics & technology, 2020-03, Vol.105, p.103182, Article 103182

2020

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Arsenic-ion implantation-induced defects in HgCdTe films studied with Hall-effect measurements and mobility spectrum analysis

Infrared physics & technology, 2019-05, Vol.98, p.230-235

2019

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MBE-grown MCT hetero- and nanostructures for IR and THz detectors

Opto-electronics review, 2019-09, Vol.27 (3), p.282-290

2019

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Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg1 – xCdxTe Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method

Semiconductors (Woodbury, N.Y.), 2018-06, Vol.52 (6), p.702-707

2018

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Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg{sub 1– x}Cd{sub x}Te Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method

Semiconductors (Woodbury, N.Y.), 2018-06, Vol.52 (6)

2018

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Intraband carrier relaxation in mid-infrared (3–4 μm) HgCdTe based structures: Effect of the carrier heating on the operating temperatures of bulk and quantum-well lasers

Toward Peltier-cooled mid-infrared HgCdTe lasers: Analyzing the temperature quenching of stimulated emission at ∼6 μm wavelength from HgCdTe quantum wells

Optical and Structural Properties of Hg0.7Cd0.3Te Epitaxial Films

Optical Studies of Molecular-Beam Epitaxy-Grown Hg1−xCdxTe with x = 0.7–0.8

Energy Position of the Size Quantization Levels in Multiple HgCdTe Quantum Wells

Parametric Model of the Optical Constant Spectra of Hg1 – xCdxTe and Determination of the Compound Composition

Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis

Optical studies of wide-bandgap HgCdTe material used in potential-and quantum-well structures

Optical and Structural Properties of HgCdTe Solid Solutions with a High CdTe Content

Strong Disorder in HgCdTe Studied with Optical Methods and X-Ray Diffraction

HgCdTe-Based 640 x 512 Matrix Midwave Infrared Photodetector

Distribution profiles of radiation donor defects in arsenic-implanted HgCdTe films

HgCdTe-Based 640 × 512 Matrix Midwave Infrared Photodetector

A Megapixel Matrix Photodetector of the Middle Infrared Range

An Optical Study of Disordering in Cadmium Mercury Telluride Solid Solutions

Localization and Nature of Radiation Donor Defects in the Arsenic Implanted Cdhgte Films Grown by MBE

Methodological and instrumental problems in high-precision in situ ellipsometry diagnostics of the mercury cadmium telluride layer composition in molecular beam epitaxy

Structural and optical properties of noncentrosymmetric quaternary crystal AgCd2GaS4

Optical properties of molecular beam epitaxy-grown HgCdTe structures with potential wells

Effect of post-implantation anneal on the current-voltage characteristics of IR photodiodes based on p-CdxHg1-xTe

Photodiodes based on p-on-n junctions formed in MBE-grown n-type MCT absorber layers for the spectral region 8 to 11 μm

Arsenic-ion implantation-induced defects in HgCdTe films studied with Hall-effect measurements and mobility spectrum analysis

MBE-grown MCT hetero- and nanostructures for IR and THz detectors

Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg1 – xCdxTe Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method

Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg{sub 1– x}Cd{sub x}Te Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method

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