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SiGe Bipolar VCO With Ultra-Wide Tuning Range at 80 GHz Center Frequency

IEEE journal of solid-state circuits, 2009-10, Vol.44 (10), p.2655-2662

2009

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Millimeter-wave VCOs with wide tuning range and low phase noise, fully integrated in a SiGe bipolar production technology

IEEE journal of solid-state circuits, 2003-02, Vol.38 (2), p.184-191

2003

Volltextzugriff (PDF)

Influence of impact-ionization-induced instabilities on the maximum usable output voltage of Si-bipolar transistors

IEEE transactions on electron devices, 2001-04, Vol.48 (4), p.774-783

2001

Volltextzugriff (PDF)

120-Gb/s VCSEL-based parallel-optical interconnect and custom 120-Gb/s testing station

Journal of lightwave technology, 2004-09, Vol.22 (9), p.2200-2212

2004

Volltextzugriff (PDF)

Design considerations for very-high-speed Si-bipolar IC's operating up to 50 Gb/s

IEEE journal of solid-state circuits, 1996-08, Vol.31 (8), p.1076-1090

1996

Volltextzugriff (PDF)

A novel transistor model for simulating avalanche-breakdown effects in Si bipolar circuits

IEEE journal of solid-state circuits, 2002-09, Vol.37 (9), p.1184-1197

2002

Volltextzugriff (PDF)

47 GHz VCO with low phase noise fabricated in a SiGe bipolar production technology

IEEE microwave and wireless components letters, 2002-03, Vol.12 (3), p.79-81

2002

Volltextzugriff (PDF)

Substrate coupling in a high-gain 30-Gb/s SiGe amplifier-modeling, suppression, and measurement

IEEE journal of solid-state circuits, 2005-10, Vol.40 (10), p.2035-2045

2005

Volltextzugriff (PDF)

Wide-band VCOs in SiGe production technology operating up to about 70 GHz

IEEE microwave and wireless components letters, 2003-10, Vol.13 (10), p.425-427

2003

Volltextzugriff (PDF)

Modeling substrate effects in the design of high-speed Si-bipolar ICs

IEEE journal of solid-state circuits, 1996-10, Vol.31 (10), p.1493-1501

1996

Volltextzugriff (PDF)

Modeling and measurement of substrate coupling in Si-bipolar IC's up to 40 GHz

IEEE journal of solid-state circuits, 1998-04, Vol.33 (4), p.582-591

1998

Volltextzugriff (PDF)

An in situ x-ray photoelectron spectroscopy study of the initial stages of rf magnetron sputter deposition of indium tin oxide on p-type Si substrate

Applied physics letters, 2013-01, Vol.102 (2)

2013

Volltextzugriff (PDF)

SiGe driver circuit with high output amplitude operating up to 23 Gb/s

IEEE journal of solid-state circuits, 1999-06, Vol.34 (6), p.886-891

1999

Volltextzugriff (PDF)

High-gain transimpedance amplifier in InP-based HBT technology for the receiver in 40-Gb/s optical-fiber TDM links

IEEE journal of solid-state circuits, 2000-09, Vol.35 (9), p.1260-1265

2000

Volltextzugriff (PDF)

Methods for measurement and simulation of weak substrate coupling in high-speed bipolar ICs

IEEE transactions on microwave theory and techniques, 2002-07, Vol.50 (7), p.1705-1713

2002

Volltextzugriff (PDF)

A versatile Si-bipolar driver circuit with high output voltage swing for external and direct laser modulation in 10 Gb/s optical-fiber links

IEEE journal of solid-state circuits, 1994-09, Vol.29 (9), p.1014-1021

1994

Volltextzugriff (PDF)

Physics- and process-based bipolar transistor modeling for integrated circuit design

IEEE journal of solid-state circuits, 1999-08, Vol.34 (8), p.1136-1149

1999

Volltextzugriff (PDF)

SiGe VCOs operating up to 88 GHz, suitable for automotive radar sensors

Electronics letters, 2003-09, Vol.39 (18), p.1326

2003

Volltextzugriff (PDF)

SiGe regenerative frequency divider operating up to 63 GHz

Electronics letters, 1999, Vol.35 (20), p.1730-1731

1999

Volltextzugriff (PDF)

A generalized integral charge-control relation and its application to compact models for silicon-based HBT's

I.E.E.E. transactions on electron devices, 1993-11, Vol.40 (11), p.2036-2046

1993

Volltextzugriff (PDF)

13 Gb/s Si-bipolar AGC amplifier IC with high gain and wide dynamic range for optical-fiber receivers

IEEE journal of solid-state circuits, 1994-07, Vol.29 (7), p.815-822, Article 815

1994

Volltextzugriff (PDF)

Low-noise, high-gain Si-bipolar preamplifiers for 10 Gb/s optical-fiber links-design and realization

IEEE journal of solid-state circuits, 1996-01, Vol.31 (1), p.24-29

1996

Volltextzugriff (PDF)

Investigation of very fast and high-current transients in digital bipolar IC's using both a new compact model and a device simulator

IEEE journal of solid-state circuits, 1995-05, Vol.30 (5), p.551-562, Article 551

1995

Volltextzugriff (PDF)

46 Gb/s DEMUX, 50 Gb/s MUX, and 30 GHz static frequency divider in silicon bipolar technology

IEEE journal of solid-state circuits, 1996-04, Vol.31 (4), p.481-486

1996

Volltextzugriff (PDF)

A compact bipolar transistor model for very-high-frequency applications with special regard to narrow emitter stripes and high current densities

Solid-state electronics, 1993, Vol.36 (7), p.1035-1048

1993

Volltextzugriff (PDF)

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SiGe Bipolar VCO With Ultra-Wide Tuning Range at 80 GHz Center Frequency

Millimeter-wave VCOs with wide tuning range and low phase noise, fully integrated in a SiGe bipolar production technology

Influence of impact-ionization-induced instabilities on the maximum usable output voltage of Si-bipolar transistors

120-Gb/s VCSEL-based parallel-optical interconnect and custom 120-Gb/s testing station

Design considerations for very-high-speed Si-bipolar IC's operating up to 50 Gb/s

A novel transistor model for simulating avalanche-breakdown effects in Si bipolar circuits

47 GHz VCO with low phase noise fabricated in a SiGe bipolar production technology

Substrate coupling in a high-gain 30-Gb/s SiGe amplifier-modeling, suppression, and measurement

Wide-band VCOs in SiGe production technology operating up to about 70 GHz

Modeling substrate effects in the design of high-speed Si-bipolar ICs

Modeling and measurement of substrate coupling in Si-bipolar IC's up to 40 GHz

An in situ x-ray photoelectron spectroscopy study of the initial stages of rf magnetron sputter deposition of indium tin oxide on p-type Si substrate

SiGe driver circuit with high output amplitude operating up to 23 Gb/s

High-gain transimpedance amplifier in InP-based HBT technology for the receiver in 40-Gb/s optical-fiber TDM links

Methods for measurement and simulation of weak substrate coupling in high-speed bipolar ICs

A versatile Si-bipolar driver circuit with high output voltage swing for external and direct laser modulation in 10 Gb/s optical-fiber links

Physics- and process-based bipolar transistor modeling for integrated circuit design

SiGe VCOs operating up to 88 GHz, suitable for automotive radar sensors

SiGe regenerative frequency divider operating up to 63 GHz

A generalized integral charge-control relation and its application to compact models for silicon-based HBT's

13 Gb/s Si-bipolar AGC amplifier IC with high gain and wide dynamic range for optical-fiber receivers

Low-noise, high-gain Si-bipolar preamplifiers for 10 Gb/s optical-fiber links-design and realization

Investigation of very fast and high-current transients in digital bipolar IC's using both a new compact model and a device simulator

46 Gb/s DEMUX, 50 Gb/s MUX, and 30 GHz static frequency divider in silicon bipolar technology

A compact bipolar transistor model for very-high-frequency applications with special regard to narrow emitter stripes and high current densities

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