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Study of Metal Contamination in CMOS Image Sensors by Dark-Current and Deep-Level Transient Spectroscopies

Journal of electronic materials, 2010-06, Vol.39 (6), p.625-629

2010

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Passivation issues in active pixel CMOS image sensors

Microelectronics and reliability, 2007-04, Vol.47 (4), p.739-742

2007

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Hydrogen desorption and diffusion in PECVD silicon nitride. Application to passivation of CMOS active pixel sensors

Microelectronic engineering, 2007-09, Vol.84 (9), p.2169-2172

2007

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Silicon-on-Nothing (SON)-an innovative process for advanced CMOS

IEEE transactions on electron devices, 2000-11, Vol.47 (11), p.2179-2187

2000

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Impact on device performance and monitoring of a low dose of tungsten contamination by Dark Current Spectroscopy

2010 IEEE International Reliability Physics Symposium, 2010, p.259-264

2010

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Study of mechanisms involved in photoresist microlens formation

Microelectronic engineering, 2006-04, Vol.83 (4), p.1087-1090

2006

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Spectroscopic ellipsometry of SixGe1-x/Si : a tool for composition and profile analysis in strained heterostructures used in the microelectronics industry

Thin solid films, 2000-09, Vol.373 (1-2), p.211-215

2000

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A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters

IEEE transactions on electron devices, 1999-07, Vol.46 (7), p.1525-1531

1999

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A Simple Room Localization Method to Find Technology in a Big Trauma Center

World Congress on Medical Physics and Biomedical Engineering 2018, p.321-325

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Characterization of semiconducting iron disilicide obtained by LRP/CVD

IEEE transactions on electron devices, 1992-01, Vol.39 (1), p.200-201

1992

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Optical characterization by spectroscopic ellipsometry of polycrystalline Si1-xGex of variable Ge composition up to 100% Ge

Thin solid films, 1998-03, Vol.315 (1-2), p.316-321

1998

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Porous silicon: material properties, visible photo- and electroluminescence

Applied surface science, 1993-01, Vol.65 (1-4), p.394-407

1993

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Growth and characterization of strain compensated Si1-x-yGexCy epitaxial layers

Materials letters, 1993-11, Vol.18 (1-2), p.57-60

1993

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Thermal stress relaxation of plasma enhanced chemical vapour deposition silicon nitride

MRS proceedings, 2005, Vol.875, Article O14.6

2005

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Selective and epitaxial deposition of β-FeSi2 on silicon by rapid thermal processing-chemical vapor deposition using a solid iron source

Applied physics letters, 1992-02, Vol.60 (8), p.956-958

1992

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Hospital-based expert model for health technology procurement planning in hospitals

2014 36th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, 2014, Vol.2014, p.3504-3507

2014

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Schottky diodes on Si1-x-yGexCy alloys : effect of the C-incorporation

Applied surface science, 1996-08, Vol.102, p.134-137

1996

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Effects of Silicon Nitride Passivation Layer on Mean Dark Current and Quantum Efficiency of CMOS Active Pixel Sensors

MRS proceedings, 2005, Vol.864, Article E8.6

2005

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Growth of Si1-x-yGexCy multi-quantum wells : structural and optical properties

Thin solid films, 1996-05, Vol.278 (1-2), p.114-117

1996

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Selective epitaxial silicon growth in the 650-1100°C range in a reduced pressure chemical vapor deposition reactor using dichlorosilane

Applied physics letters, 1989-02, Vol.54 (7), p.658-659

1989

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Local strains in Si1−x−yGexCy alloys as deduced from vibrational frequencies

Thin solid films, 1997-02, Vol.294 (1-2), p.118-121

1997

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Optical properties of bulk and multi-quantum well SiGe: C heterostructures

Journal of crystal growth, 1995-12, Vol.157 (1), p.410-413

1995

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A comparative study of TiSi2 obtained by solid-state reaction and chemical vapor deposition

Applied surface science, 1993-11, Vol.73, p.25-30

1993

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Single-wafer Si and SiGe processes for advanced ULSI technologies

Thin solid films, 1997-02, Vol.294 (1), p.11-14

1997

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Selective TiSi2 deposition with no silicon substrate consumption by rapid thermal processing in a LPCVD reactor

Journal of electronic materials, 1990-03, Vol.19 (3), p.253-258

1990

Volltextzugriff (PDF)

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Study of Metal Contamination in CMOS Image Sensors by Dark-Current and Deep-Level Transient Spectroscopies

Passivation issues in active pixel CMOS image sensors

Hydrogen desorption and diffusion in PECVD silicon nitride. Application to passivation of CMOS active pixel sensors

Silicon-on-Nothing (SON)-an innovative process for advanced CMOS

Impact on device performance and monitoring of a low dose of tungsten contamination by Dark Current Spectroscopy

Study of mechanisms involved in photoresist microlens formation

Spectroscopic ellipsometry of SixGe1-x/Si : a tool for composition and profile analysis in strained heterostructures used in the microelectronics industry

A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters

A Simple Room Localization Method to Find Technology in a Big Trauma Center

Characterization of semiconducting iron disilicide obtained by LRP/CVD

Optical characterization by spectroscopic ellipsometry of polycrystalline Si1-xGex of variable Ge composition up to 100% Ge

Porous silicon: material properties, visible photo- and electroluminescence

Growth and characterization of strain compensated Si1-x-yGexCy epitaxial layers

Thermal stress relaxation of plasma enhanced chemical vapour deposition silicon nitride

Selective and epitaxial deposition of β-FeSi2 on silicon by rapid thermal processing-chemical vapor deposition using a solid iron source

Hospital-based expert model for health technology procurement planning in hospitals

Schottky diodes on Si1-x-yGexCy alloys : effect of the C-incorporation

Effects of Silicon Nitride Passivation Layer on Mean Dark Current and Quantum Efficiency of CMOS Active Pixel Sensors

Growth of Si1-x-yGexCy multi-quantum wells : structural and optical properties

Selective epitaxial silicon growth in the 650-1100°C range in a reduced pressure chemical vapor deposition reactor using dichlorosilane

Local strains in Si1−x−yGexCy alloys as deduced from vibrational frequencies

Optical properties of bulk and multi-quantum well SiGe: C heterostructures

A comparative study of TiSi2 obtained by solid-state reaction and chemical vapor deposition

Single-wafer Si and SiGe processes for advanced ULSI technologies

Selective TiSi2 deposition with no silicon substrate consumption by rapid thermal processing in a LPCVD reactor

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