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A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 μm

Nature (London), 1997-06, Vol.387 (6634), p.686-688

1997

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Optical absorption study of ion beam synthesized polycrystalline semiconducting FeSi2

Journal of applied physics, 1995-08, Vol.78 (3), p.1958-1963

1995

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Ion beam synthesized silicides: growth, characterization and devices

Thin solid films, 2001-01, Vol.381 (2), p.188-193

2001

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Mechanism of buried β-SiC formation by implanted carbon in silicon

Thin solid films, 1990-10, Vol.191 (1), p.147-164

1990

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On the origin of the 1.5 μm luminescence in ion beam synthesized β-FeSi2

Applied physics letters, 1996-03, Vol.68 (12), p.1649-1650

1996

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Structural properties of ion beam synthezised iron-cobalt silicide

Journal of physics. D, Applied physics (Print), 1996-07, Vol.29 (7), p.1822-1830

1996

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Microscope spectrophotometric study of GaAs/AlxGa1-xAs MBE structures

Journal of physics. D, Applied physics, 1994-07, Vol.27 (7), p.1528-1532

1994

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A transmission electron microscope investigation of the dose dependence of the microstructure of silicon-on-insulator structures formed by nitrogen implantation of silicon

Journal of applied physics, 1991-03, Vol.69 (6), p.3503-3511

1991

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TEM investigation of ion beam synthesized semiconducting FeSi2

Materials letters, 1995-05, Vol.23 (4-6), p.215-220

1995

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Is there a future for semiconducting silicides? ( invited)

Microelectronic engineering, 2000, Vol.50 (1), p.223-235

2000

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The Effects of Dose and Target Temperature on Low Energy SIMOX Layers

Journal of the Electrochemical Society, 1993-06, Vol.140 (6), p.1780-1786

1993

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Interface reaction between Ir films and relaxed SiGe MBE layers by rapid thermal annealing

Journal of crystal growth, 1995-12, Vol.157 (1), p.236-241

1995

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Dislocation formation related with high oxygen dose implantation on silicon

Journal of applied physics, 1991-01, Vol.69 (2), p.793-802

1991

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Monitoring of SIMOX layer properties and implantation temperature by optical measurements

Semiconductor science and technology, 1987-10, Vol.2 (10), p.687-690

1987

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High-performance SOI-CMOS Transistors in oxygen-implanted silicon without epitaxy

IEEE electron device letters, 1987-07, Vol.8 (7), p.291-293

1987

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Nuclear microprobe ion-channelling analysis of total dielectric isolation structures in silicon

Semiconductor science and technology, 1991-09, Vol.6 (9), p.890-895

1991

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Oxygen rich SIMOX?

Semiconductor science and technology, 1991-08, Vol.6 (8), p.730-734

1991

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Fabrication of buried layers of SiO2 and Si3N4 a using ion beam synthesis

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1987, Vol.19-20, p.269-278

Reeson, K.J.

1987

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Current/voltage characteristics of ion beam synthesised CoSi2/Si Schottky Barrier diodes

Electronics letters, 1992-01, Vol.28 (3), p.296-298

1992

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Redistribution and electrical activation of implanted arsenic in silicon on insulator substrates formed by oxygen ion implantation

Journal of applied physics, 1990-10, Vol.68 (8), p.4340-4342

1990

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Study of the microstructure of low energy (70 KeV) oxygen implanted silicon

Applied physics letters, 1991-12, Vol.59 (24), p.3130-3132

1991

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Modifying the current/voltage characteristics of ion beam synthesised CoSi2/Si schottky barrier diodes by phosphorus and arsenic implantation

Electronics letters, 1992-02, Vol.28 (5), p.515-516

1992

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Improved quality Si-on-Si3N4 structures by ion beam synthesis and lamp annealing

Applied physics letters, 1987-06, Vol.50 (26), p.1882-1884

1987

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Photoluminescence studies of silicon-on-insulator substrates formed by oxygen implantation

Applied physics letters, 1988-02, Vol.52 (6), p.465-467

1988

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Identification of CoSi inclusions within buried CoSi2 layers formed by ion implantation

Journal of applied physics, 1990-10, Vol.68 (7), p.3792-3794

1990

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A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 μm

Optical absorption study of ion beam synthesized polycrystalline semiconducting FeSi2

Ion beam synthesized silicides: growth, characterization and devices

Mechanism of buried β-SiC formation by implanted carbon in silicon

On the origin of the 1.5 μm luminescence in ion beam synthesized β-FeSi2

Structural properties of ion beam synthezised iron-cobalt silicide

Microscope spectrophotometric study of GaAs/AlxGa1-xAs MBE structures

A transmission electron microscope investigation of the dose dependence of the microstructure of silicon-on-insulator structures formed by nitrogen implantation of silicon

TEM investigation of ion beam synthesized semiconducting FeSi2

Is there a future for semiconducting silicides? ( invited)

The Effects of Dose and Target Temperature on Low Energy SIMOX Layers

Interface reaction between Ir films and relaxed SiGe MBE layers by rapid thermal annealing

Dislocation formation related with high oxygen dose implantation on silicon

Monitoring of SIMOX layer properties and implantation temperature by optical measurements

High-performance SOI-CMOS Transistors in oxygen-implanted silicon without epitaxy

Nuclear microprobe ion-channelling analysis of total dielectric isolation structures in silicon

Oxygen rich SIMOX?

Fabrication of buried layers of SiO2 and Si3N4 a using ion beam synthesis

Current/voltage characteristics of ion beam synthesised CoSi2/Si Schottky Barrier diodes

Redistribution and electrical activation of implanted arsenic in silicon on insulator substrates formed by oxygen ion implantation

Study of the microstructure of low energy (70 KeV) oxygen implanted silicon

Modifying the current/voltage characteristics of ion beam synthesised CoSi2/Si schottky barrier diodes by phosphorus and arsenic implantation

Improved quality Si-on-Si3N4 structures by ion beam synthesis and lamp annealing

Photoluminescence studies of silicon-on-insulator substrates formed by oxygen implantation

Identification of CoSi inclusions within buried CoSi2 layers formed by ion implantation

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