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Impact of Technology Scaling on SRAM Soft Error Rates

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.3512-3518

2014

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Predicting Muon-Induced SEU Rates for a 28-nm SRAM Using Protons and Heavy Ions to Calibrate the Sensitive Volume Model

IEEE transactions on nuclear science, 2018-02, Vol.65 (2), p.712-718

2018

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Electron-Induced Single-Event Upsets in Static Random Access Memory

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4122-4129

2013

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The Effect of Layout Topology on Single-Event Transient Pulse Quenching in a 65 nm Bulk CMOS Process

IEEE transactions on nuclear science, 2010-12, Vol.57 (6), p.3380-3385

2010

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Laser- and Heavy Ion-Induced Charge Collection in Bulk FinFETs

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2563-2569

2011

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CRÈME: The 2011 Revision of the Cosmic Ray Effects on Micro-Electronics Code

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.3141-3147

2012

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Application of the TIARA Radiation Transport Tool to Single Event Effects Simulation

IEEE transactions on nuclear science, 2014-06, Vol.61 (3), p.1498-1500

2014

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Heavy-Ion-Induced Current Transients in Bulk and SOI FinFETs

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2674-2681

2012

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Effectiveness of SEL Hardening Strategies and the Latchup Domino Effect

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2642-2650

2012

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Time-Domain Reflectometry Measurements of Total-Ionizing-Dose Degradation of n MOSFETs

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4470-4475

2013

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Radiation effects in new materials for nano-devices

Microelectronic engineering, 2011-07, Vol.88 (7), p.1259-1264

2011

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Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.2943-2947

2008

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Comparison between pulse waveform analysis and thermodilution cardiac output determination in patients with severe pre-eclampsia

British journal of anaesthesia : BJA, 2011-01, Vol.106 (1), p.77-81

2011

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Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

IEEE transactions on nuclear science, 2020-01, Vol.67 (1), p.22-28

2020

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Charge Generation by Secondary Particles From Nuclear Reactions in BEOL Materials

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3172-3179

2009

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Impact of Back-Gate Bias and Device Geometry on the Total Ionizing Dose Response of 1-Transistor Floating Body RAMs

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2966-2973

2012

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Single-Event Transient Sensitivity of InAlSb/InAs/AlGaSb High Electron Mobility Transistors

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2691-2696

2012

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Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs

IEEE transactions on nuclear science, 2021-07, Vol.68 (7), p.1430-1435

2021

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The Significance of High-Level Carrier Generation Conditions for Charge Collection in Irradiated Devices

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2710-2721

2012

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Alpha Particle-Induced Persistent Effects in a COTS 3-D-Integrated CMOS Imager

IEEE transactions on nuclear science, 2024-04, Vol.71 (4), p.759-769

2024

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Efficient Method for Estimating the Characteristics of Radiation-Induced Current Transients

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2704-2709

2012

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Impact of Proton Irradiation-Induced Bulk Defects on Gate-Lag in GaN HEMTs

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3192-3195

2009

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Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design

Applied physics letters, 2024-03, Vol.124 (13)

2024

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Estimating Terrestrial Neutron-Induced SEB Cross Sections and FIT Rates for High-Voltage SiC Power MOSFETs

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.337-343

2019

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Single-Event Burnout in Vertical β -Ga₂O₃ Diodes With Pt/PtO ₓ Schottky Contacts and High- k Field-Plate Dielectrics

IEEE transactions on nuclear science, 2024-04, Vol.71 (4), p.515-521

2024

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Impact of Technology Scaling on SRAM Soft Error Rates

Predicting Muon-Induced SEU Rates for a 28-nm SRAM Using Protons and Heavy Ions to Calibrate the Sensitive Volume Model

Electron-Induced Single-Event Upsets in Static Random Access Memory

The Effect of Layout Topology on Single-Event Transient Pulse Quenching in a 65 nm Bulk CMOS Process

Laser- and Heavy Ion-Induced Charge Collection in Bulk FinFETs

CRÈME: The 2011 Revision of the Cosmic Ray Effects on Micro-Electronics Code

Application of the TIARA Radiation Transport Tool to Single Event Effects Simulation

Heavy-Ion-Induced Current Transients in Bulk and SOI FinFETs

Effectiveness of SEL Hardening Strategies and the Latchup Domino Effect

Time-Domain Reflectometry Measurements of Total-Ionizing-Dose Degradation of n MOSFETs

Radiation effects in new materials for nano-devices

Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection

Comparison between pulse waveform analysis and thermodilution cardiac output determination in patients with severe pre-eclampsia

Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

Charge Generation by Secondary Particles From Nuclear Reactions in BEOL Materials

Impact of Back-Gate Bias and Device Geometry on the Total Ionizing Dose Response of 1-Transistor Floating Body RAMs

Single-Event Transient Sensitivity of InAlSb/InAs/AlGaSb High Electron Mobility Transistors

Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs

The Significance of High-Level Carrier Generation Conditions for Charge Collection in Irradiated Devices

Alpha Particle-Induced Persistent Effects in a COTS 3-D-Integrated CMOS Imager

Efficient Method for Estimating the Characteristics of Radiation-Induced Current Transients

Impact of Proton Irradiation-Induced Bulk Defects on Gate-Lag in GaN HEMTs

Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design

Estimating Terrestrial Neutron-Induced SEB Cross Sections and FIT Rates for High-Voltage SiC Power MOSFETs

Single-Event Burnout in Vertical β -Ga₂O₃ Diodes With Pt/PtO ₓ Schottky Contacts and High- k Field-Plate Dielectrics

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