UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 265

Sortiert nach

Optical Properties of Rectangular Cross-sectional ZnS Nanowires

Nano letters, 2004-09, Vol.4 (9), p.1663-1668

2004

Volltextzugriff (PDF)

Enhancement of the superconducting transition temperature of MgB2 by a strain-induced bond-stretching mode softening

Physical review letters, 2004-10, Vol.93 (14), p.147006.1-147006.4

2004

Volltextzugriff (PDF)

Diameter-Controlled Synthesis of Silicon Nanowires Using Nanoporous Alumina Membranes

Advanced materials (Weinheim), 2005-01, Vol.17 (1), p.114-117

2005

Volltextzugriff (PDF)

Growth of thick p-type SiC epitaxial layers by halide chemical vapor deposition

Journal of crystal growth, 2008-08, Vol.310 (18), p.4088-4093

2008

Volltextzugriff (PDF)

Measuring the specific contact resistance of contacts to semiconductor nanowires

Solid-state electronics, 2005-02, Vol.49 (2), p.227-232

2005

Volltextzugriff (PDF)

Crystallographic wet chemical etching of GaN

Applied physics letters, 1998-11, Vol.73 (18), p.2654-2656

1998

Volltextzugriff (PDF)

Large anisotropic normal-state magnetoresistance in clean MgB2 thin films

Physical review letters, 2006-04, Vol.96 (16), p.167003-167003

2006

Volltextzugriff (PDF)

Superconducting MgB2 thin films on silicon carbide substrates by hybrid physical–chemical vapor deposition

Applied physics letters, 2003-03, Vol.82 (13), p.2097-2099

2003

Volltextzugriff (PDF)

Evolution of threading dislocations in MOCVD-grown GaN films on (1 1 1) Si substrates

Journal of crystal growth, 2007-03, Vol.300 (1), p.217-222

2007

Volltextzugriff (PDF)

Thickness dependence of the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition

Applied physics letters, 2003-06, Vol.82 (24), p.4319-4321

2003

Volltextzugriff (PDF)

Optical properties of Si-doped GaN

Applied physics letters, 1997-08, Vol.71 (7), p.921-923

1997

Volltextzugriff (PDF)

Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction

Journal of applied physics, 2000-01, Vol.87 (2), p.801-804

2000

Volltextzugriff (PDF)

Critical current density and resistivity of MgB2 films

Applied physics letters, 2003-07, Vol.83 (1), p.102-104

2003

Volltextzugriff (PDF)

X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN

Applied physics letters, 2003-05, Vol.82 (19), p.3254-3256

2003

Volltextzugriff (PDF)

Nanoscale disorder in pure and doped MgB2 thin films

Superconductor science & technology, 2010-09, Vol.23 (9), p.095008-095008

2010

Volltextzugriff (PDF)

High voltage (450 V) GaN Schottky rectifiers

Applied physics letters, 1999-03, Vol.74 (9), p.1266-1268

1999

Volltextzugriff (PDF)

In situ epitaxial MgB2 thin films for superconducting electronics

Nature materials, 2002-09, Vol.1 (1), p.35-38

2002

Volltextzugriff (PDF)

High upper critical field and irreversibility field in MgB2 coated-conductor fibers

Applied physics letters, 2005-12, Vol.87 (25)

2005

Volltextzugriff (PDF)

Growth characteristics of silicon nanowires synthesized by vapor–liquid–solid growth in nanoporous alumina templates

Journal of crystal growth, 2003-06, Vol.254 (1), p.14-22

2003

Volltextzugriff (PDF)

Planar MgB2 superconductor-normal metal-superconductor Josephson junctions fabricated using epitaxial MgB2∕TiB2 bilayers

Applied physics letters, 2006-05, Vol.88 (22)

2006

Volltextzugriff (PDF)

Single wire radial junction photovoltaic devices fabricated using aluminum catalyzed silicon nanowires

Nanotechnology, 2011-11, Vol.22 (44), p.445401-1-5

2011

Volltextzugriff (PDF)

Tensile stress generation and dislocation reduction in Si-doped AlxGa1−xN films

Journal of applied physics, 2009-07, Vol.106 (2)

2009

Volltextzugriff (PDF)

Upper critical fields up to 60 T in dirty magnesium diboride thin films

IEEE transactions on applied superconductivity, 2005-06, Vol.15 (2), p.3234-3237

2005

Volltextzugriff (PDF)

Schottky barrier engineering in III–V nitrides via the piezoelectric effect

Applied physics letters, 1998-09, Vol.73 (13), p.1880-1882

1998

Volltextzugriff (PDF)

MgB2 thin films by hybrid physical–chemical vapor deposition

Physica. C, Superconductivity, 2007-06, Vol.456 (1-2), p.22-37

2007

Volltextzugriff (PDF)

1 – 25 von 265

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(212)
Mit Volltextzugriff
(230)

Publikationsform

Sprache

Englisch
(255)
Japanisch
(62)
Russisch
(1)

Erscheinungsjahr

n.n

Thema

Science & Technology
(155)
Physics
(145)
Physical Sciences
(141)
Physics, Applied
(122)
Technology
(86)
Materials Science
(73)
Materials Science, Multidisciplinary
(54)
Exact Sciences And Technology
(43)
Engineering
(41)
Engineering, Electrical & Electronic
(38)
Physics, Condensed Matter
(36)
Nanoscience & Nanotechnology
(22)
Science & Technology - Other Topics
(22)
Chemical Vapor Deposition
(18)
Physics And Astronomy
(18)
Cross-Disciplinary Physics: Materials Science; Rheology
(17)
Applied Sciences
(16)
Chemistry
(16)
Crystallography
(16)
Thin Films
(16)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(3)

Menü

Weitere Dienste

Einstellungen

Optical Properties of Rectangular Cross-sectional ZnS Nanowires

Enhancement of the superconducting transition temperature of MgB2 by a strain-induced bond-stretching mode softening

Diameter-Controlled Synthesis of Silicon Nanowires Using Nanoporous Alumina Membranes

Growth of thick p-type SiC epitaxial layers by halide chemical vapor deposition

Measuring the specific contact resistance of contacts to semiconductor nanowires

Crystallographic wet chemical etching of GaN

Large anisotropic normal-state magnetoresistance in clean MgB2 thin films

Superconducting MgB2 thin films on silicon carbide substrates by hybrid physical–chemical vapor deposition

Evolution of threading dislocations in MOCVD-grown GaN films on (1 1 1) Si substrates

Thickness dependence of the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition

Optical properties of Si-doped GaN

Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction

Critical current density and resistivity of MgB2 films

X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN

Nanoscale disorder in pure and doped MgB2 thin films

High voltage (450 V) GaN Schottky rectifiers

In situ epitaxial MgB2 thin films for superconducting electronics

High upper critical field and irreversibility field in MgB2 coated-conductor fibers

Growth characteristics of silicon nanowires synthesized by vapor–liquid–solid growth in nanoporous alumina templates

Planar MgB2 superconductor-normal metal-superconductor Josephson junctions fabricated using epitaxial MgB2∕TiB2 bilayers

Single wire radial junction photovoltaic devices fabricated using aluminum catalyzed silicon nanowires

Tensile stress generation and dislocation reduction in Si-doped AlxGa1−xN films

Upper critical fields up to 60 T in dirty magnesium diboride thin films

Schottky barrier engineering in III–V nitrides via the piezoelectric effect

MgB2 thin films by hybrid physical–chemical vapor deposition

Suchergebnisse filtern