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Structural and optical properties of pulsed-laser deposited crystalline β-Ga2O3 thin films on silicon

Semiconductor science and technology, 2019-03, Vol.34 (3)

2019

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Charge transport in n-type As- and Sb-hyperdoped Ge

Applied physics letters, 2024-04, Vol.124 (14)

2024

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Si1−x−yGeySnx alloy formation by Sn ion implantation and flash lamp annealing

Journal of applied physics, 2024-08, Vol.136 (6)

2024

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Band gap renormalization in n-type GeSn alloys made by ion implantation and flash lamp annealing

Journal of applied physics, 2019-05, Vol.125 (20)

2019

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Engineering of optical and electrical properties of ZnO by non-equilibrium thermal processing: The role of zinc interstitials and zinc vacancies

Journal of applied physics, 2017-07, Vol.122 (3)

2017

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Bright green electroluminescence from Tb3+ in silicon metal-oxide-semiconductor devices

Journal of applied physics, 2005-06, Vol.97 (12)

2005

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Structural and optical properties of pulsed-laser deposited crystalline β -Ga 2 O 3 thin films on silicon

Semiconductor science and technology, 2019-03, Vol.34 (3), p.35001

2019

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Ex situ n+ doping of GeSn alloys via non-equilibrium processing

Semiconductor science and technology, 2018-06, Vol.33 (6), p.65008

2018

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Strong electroluminescence from SiO2-Tb2O3-Al2O3 mixed layers fabricated by atomic layer deposition

Applied physics letters, 2014-06, Vol.104 (25)

2014

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Realizing the insulator-to-metal transition in Se-hyperdoped Si via non-equilibrium material processing

Journal of physics. D, Applied physics, 2017-10, Vol.50 (41), p.415102

2017

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Formation of n- and p-type regions in individual Si/SiO2 core/shell nanowires by ion beam doping

Nanotechnology, 2018-11, Vol.29 (47), p.474001-474001

2018

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Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices

Applied physics letters, 2013-09, Vol.103 (11)

2013

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In situ ohmic contact formation for n-type Ge via non-equilibrium processing

Semiconductor science and technology, 2017-11, Vol.32 (11), p.115006

2017

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The electroluminescence mechanism of Er3+ in different silicon oxide and silicon nitride environments

Journal of applied physics, 2014-09, Vol.116 (12)

2014

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Band-gap narrowing in Mn-doped GaAs probed by room-temperature photoluminescence

Physical review. B, Condensed matter and materials physics, 2015-12, Vol.92 (22), Article 224407

2015

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Luminescence mechanism for Er3+ ions in a silicon-rich nitride host under electrical pumping

Journal of physics. D, Applied physics, 2016-03, Vol.49 (8)

2016

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Correlation between the microstructure and electroluminescence properties of Er-doped metal-oxide semiconductor structures

Applied physics letters, 2009-03, Vol.94 (10), p.101916-101916-3

2009

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Group-IV nanocluster formation by ion-beam synthesis

Applied physics. A, Materials science & processing, 2003-05, Vol.76 (7), p.1049-1059

2003

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Bioconjugation of the estrogen receptor hERα to a quantum dot dye for a controlled immobilization on a SiO₂ surface

Journal of colloid and interface science, 2011-03, Vol.355 (2), p.442-447

2011

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Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements

Applied physics. B, Lasers and optics, 2000-08, Vol.71 (2), p.131-151

2000

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The electrical and electroluminescence properties of rare earth implanted MOS light emitting devices in the near infrared

Journal of luminescence, 2012-12, Vol.132 (12), p.3151-3153

2012

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Blue and red electroluminescence of Europium-implanted metal-oxide-semiconductor structures as a probe for the dynamics of microstructure

Applied physics letters, 2008-08, Vol.93 (7)

2008

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Electroluminescence from Er and Yb co-doped silicon dioxide layers: The excitation mechanism

Journal of non-crystalline solids, 2011-02, Vol.357 (3), p.915-918

2011

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Blue electroluminescence of ytterbium clusters in SiO2 by co-operative up-conversion

Applied physics. B, Lasers and optics, 2010-02, Vol.98 (2-3), p.451-454

2010

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Doping by flash lamp annealing

Materials science in semiconductor processing, 2017-05, Vol.62, p.115-127

2017

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Structural and optical properties of pulsed-laser deposited crystalline β-Ga2O3 thin films on silicon

Charge transport in n-type As- and Sb-hyperdoped Ge

Si1−x−yGeySnx alloy formation by Sn ion implantation and flash lamp annealing

Band gap renormalization in n-type GeSn alloys made by ion implantation and flash lamp annealing

Engineering of optical and electrical properties of ZnO by non-equilibrium thermal processing: The role of zinc interstitials and zinc vacancies

Bright green electroluminescence from Tb3+ in silicon metal-oxide-semiconductor devices

Structural and optical properties of pulsed-laser deposited crystalline β -Ga 2 O 3 thin films on silicon

Ex situ n+ doping of GeSn alloys via non-equilibrium processing

Strong electroluminescence from SiO2-Tb2O3-Al2O3 mixed layers fabricated by atomic layer deposition

Realizing the insulator-to-metal transition in Se-hyperdoped Si via non-equilibrium material processing

Formation of n- and p-type regions in individual Si/SiO2 core/shell nanowires by ion beam doping

Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices

In situ ohmic contact formation for n-type Ge via non-equilibrium processing

The electroluminescence mechanism of Er3+ in different silicon oxide and silicon nitride environments

Band-gap narrowing in Mn-doped GaAs probed by room-temperature photoluminescence

Luminescence mechanism for Er3+ ions in a silicon-rich nitride host under electrical pumping

Correlation between the microstructure and electroluminescence properties of Er-doped metal-oxide semiconductor structures

Group-IV nanocluster formation by ion-beam synthesis

Bioconjugation of the estrogen receptor hERα to a quantum dot dye for a controlled immobilization on a SiO₂ surface

Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements

The electrical and electroluminescence properties of rare earth implanted MOS light emitting devices in the near infrared

Blue and red electroluminescence of Europium-implanted metal-oxide-semiconductor structures as a probe for the dynamics of microstructure

Electroluminescence from Er and Yb co-doped silicon dioxide layers: The excitation mechanism

Blue electroluminescence of ytterbium clusters in SiO2 by co-operative up-conversion

Doping by flash lamp annealing

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