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Extraction of the edge/areal components and path of the reverse gate leakage in a GaN HEMT from measurements

Semiconductor science and technology, 2022-06, Vol.37 (6), p.65014

2022

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Impact of heavy ion particle strike induced single event transients on conventional and π-Gate AlGaN/GaN HEMTs

Semiconductor science and technology, 2021-03, Vol.36 (3)

2021

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On the Single-Event Burnout Performance of a GaN HEMT With Sunken Source-Connected Field Plate Architecture

IEEE transactions on electron devices, 2024-07, Vol.71 (7), p.4072-4078

2024

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Efficacy of Π-Gate in RF Power Performance of Thin GaN Buffer AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2023-05, Vol.70 (5), p.2612-2615

2023

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Investigation of RF performance of Ku-band GaN HEMT device and an in-depth analysis of short channel effects

Physica scripta, 2024-04, Vol.99 (4), p.45029

2024

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Proton irradiation effects on buffer-free gallium nitride on silicon carbide high electron mobility transistor-based radio frequency power amplifier

Semiconductor science and technology, 2021-04, Vol.36 (4), p.45019

2021

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Impact of Gamma Radiations on Static, Pulsed I-V, and RF Performance Parameters of AlGaN/GaN HEMT

IEEE transactions on electron devices, 2022-05, Vol.69 (5), p.2299-2306

2022

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Suitability of thin-GaN for AlGaN/GaN HEMT material and device

Journal of materials science, 2022-03, Vol.57 (10), p.5913-5923

2022

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Efficacy of back barrier engineered Π-gate InAlN/GaN high electron mobility transistors for high-power applications

Journal of physics. D, Applied physics, 2023-10, Vol.56 (40), p.405112

2023

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Ohmic contact morphology improvement with reduced resistance using Si/Au/Ti/Al/Ni/Au (AlGaN) and Si/Au/Ti/Al/Ni/Au (InAlN) stack layers in III-Nitride HEMTs

Semiconductor science and technology, 2022-08, Vol.37 (8), p.85006

2022

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Impact of barrier layer thickness on DC and RF performance of AlGaN/GaN high electron mobility transistors

Applied physics. A, Materials science & processing, 2023-08, Vol.129 (8), Article 563

2023

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Optimization of π – Gate AlGaN/AlN/GaN HEMTs for Low Noise and High Gain Applications

SILICON, 2022, Vol.14 (2), p.393-404

2022

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Effect of metallurgical step-graded quantum barrier on the performance of InGaN-based laser diode

Laser physics, 2023-11, Vol.33 (11), p.115801

2023

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Improvement in DC and pulse characteristics of AlGaN/GaN HEMT by employing dual metal gate structure

Semiconductor science and technology, 2019-10, Vol.34 (10), p.105013

2019

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Improvement in Schottky barrier inhomogeneities of Ni/AlGaN/GaN Schottky diodes after cumulative γ-ray irradiation

Semiconductor science and technology, 2021-06, Vol.36 (6), p.65012

2021

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Transient analysis of growth/decay in materials utilizing a digital exponential peeling method

International journal of numerical modelling, 2024-05, Vol.37 (3), p.n/a

2024

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Effect of compositionally co-related and orderly varying indium molar content on the performance of In0.15Ga0.85N/InxGa(1−x)N laser diode structure

Optical and quantum electronics, 2024-03, Vol.56 (3), Article 470

2024

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Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors

AIP advances, 2019-12, Vol.9 (12), p.125231-125231-5

2019

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DEEP LEARNING ALGORITHM FOR URBAN FEATURE EXTRACTION USING SAR DATA

International archives of the photogrammetry, remote sensing and spatial information sciences., 2021, Vol.XLIII-B3-2021, p.93-101

2021

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Study of reliability measures of a local area network via copula linguistics approach

The International journal of quality & reliability management, 2015-01, Vol.32 (1), p.97-111

2015

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Study of “Thin Buffer” GaN on SiC HEMT and Effect of Bulk Traps on it

SILICON, 2022-12, Vol.14 (18), p.12505-12512

2022

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LAND USE AND LAND COVER MAPPING – A CASE STUDY OF AHMEDABAD DISTRICT

International archives of the photogrammetry, remote sensing and spatial information sciences., 2020, Vol.XLIII-B3-2020, p.189-193

2020

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URBAN DEVELOPMENT PLAN USING OPEN SOURCE GEOSPATIAL TECHNOLOGY – A CASE STUDY OF AHMEDABAD

International archives of the photogrammetry, remote sensing and spatial information sciences., 2019, Vol.XLII-4/W14, p.197-201

2019

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ANALYSIS OF DIFFERENT POLARIMETRIC DECOMPOSITION TECHNIQUES USING COMPACT POLARIMETRIC NISAR DATA FOR AHMEDABAD, INDIA

International archives of the photogrammetry, remote sensing and spatial information sciences., 2021, Vol.XLIII-B3-2021, p.135-140

2021

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CAPACITY BUILDING FOR GIS-BASED SDG INDICATORS ANALYSIS WITH GLOBAL HIGH-RESOLUTION LAND COVER DATASETS

International archives of the photogrammetry, remote sensing and spatial information sciences., 2023, Vol.XLVIII-1/W2-2023, p.559-564

2023

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Extraction of the edge/areal components and path of the reverse gate leakage in a GaN HEMT from measurements

Impact of heavy ion particle strike induced single event transients on conventional and π-Gate AlGaN/GaN HEMTs

On the Single-Event Burnout Performance of a GaN HEMT With Sunken Source-Connected Field Plate Architecture

Efficacy of Π-Gate in RF Power Performance of Thin GaN Buffer AlGaN/GaN HEMTs

Investigation of RF performance of Ku-band GaN HEMT device and an in-depth analysis of short channel effects

Proton irradiation effects on buffer-free gallium nitride on silicon carbide high electron mobility transistor-based radio frequency power amplifier

Impact of Gamma Radiations on Static, Pulsed I-V, and RF Performance Parameters of AlGaN/GaN HEMT

Suitability of thin-GaN for AlGaN/GaN HEMT material and device

Efficacy of back barrier engineered Π-gate InAlN/GaN high electron mobility transistors for high-power applications

Ohmic contact morphology improvement with reduced resistance using Si/Au/Ti/Al/Ni/Au (AlGaN) and Si/Au/Ti/Al/Ni/Au (InAlN) stack layers in III-Nitride HEMTs

Impact of barrier layer thickness on DC and RF performance of AlGaN/GaN high electron mobility transistors

Optimization of π – Gate AlGaN/AlN/GaN HEMTs for Low Noise and High Gain Applications

Effect of metallurgical step-graded quantum barrier on the performance of InGaN-based laser diode

Improvement in DC and pulse characteristics of AlGaN/GaN HEMT by employing dual metal gate structure

Improvement in Schottky barrier inhomogeneities of Ni/AlGaN/GaN Schottky diodes after cumulative γ-ray irradiation

Transient analysis of growth/decay in materials utilizing a digital exponential peeling method

Effect of compositionally co-related and orderly varying indium molar content on the performance of In0.15Ga0.85N/InxGa(1−x)N laser diode structure

Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors

DEEP LEARNING ALGORITHM FOR URBAN FEATURE EXTRACTION USING SAR DATA

Study of reliability measures of a local area network via copula linguistics approach

Study of “Thin Buffer” GaN on SiC HEMT and Effect of Bulk Traps on it

LAND USE AND LAND COVER MAPPING – A CASE STUDY OF AHMEDABAD DISTRICT

URBAN DEVELOPMENT PLAN USING OPEN SOURCE GEOSPATIAL TECHNOLOGY – A CASE STUDY OF AHMEDABAD

ANALYSIS OF DIFFERENT POLARIMETRIC DECOMPOSITION TECHNIQUES USING COMPACT POLARIMETRIC NISAR DATA FOR AHMEDABAD, INDIA

CAPACITY BUILDING FOR GIS-BASED SDG INDICATORS ANALYSIS WITH GLOBAL HIGH-RESOLUTION LAND COVER DATASETS

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