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Suitability of thin-GaN for AlGaN/GaN HEMT material and device

Journal of materials science, 2022-03, Vol.57 (10), p.5913-5923

2022

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Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors

AIP advances, 2019-12, Vol.9 (12), p.125231-125231-5

2019

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Extraction of the edge/areal components and path of the reverse gate leakage in a GaN HEMT from measurements

Semiconductor science and technology, 2022-06, Vol.37 (6), p.65014

2022

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Impact of heavy ion particle strike induced single event transients on conventional and π-Gate AlGaN/GaN HEMTs

Semiconductor science and technology, 2021-03, Vol.36 (3)

2021

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On the Single-Event Burnout Performance of a GaN HEMT With Sunken Source-Connected Field Plate Architecture

IEEE transactions on electron devices, 2024-07, Vol.71 (7), p.4072-4078

2024

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Efficacy of Π-Gate in RF Power Performance of Thin GaN Buffer AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2023-05, Vol.70 (5), p.2612-2615

2023

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Investigation of RF performance of Ku-band GaN HEMT device and an in-depth analysis of short channel effects

Physica scripta, 2024-04, Vol.99 (4), p.45029

2024

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Proton irradiation effects on buffer-free gallium nitride on silicon carbide high electron mobility transistor-based radio frequency power amplifier

Semiconductor science and technology, 2021-04, Vol.36 (4), p.45019

2021

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Impact of Gamma Radiations on Static, Pulsed I-V, and RF Performance Parameters of AlGaN/GaN HEMT

IEEE transactions on electron devices, 2022-05, Vol.69 (5), p.2299-2306

2022

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Efficacy of back barrier engineered Π-gate InAlN/GaN high electron mobility transistors for high-power applications

Journal of physics. D, Applied physics, 2023-10, Vol.56 (40), p.405112

2023

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Ohmic contact morphology improvement with reduced resistance using Si/Au/Ti/Al/Ni/Au (AlGaN) and Si/Au/Ti/Al/Ni/Au (InAlN) stack layers in III-Nitride HEMTs

Semiconductor science and technology, 2022-08, Vol.37 (8), p.85006

2022

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Impact of barrier layer thickness on DC and RF performance of AlGaN/GaN high electron mobility transistors

Applied physics. A, Materials science & processing, 2023-08, Vol.129 (8), Article 563

2023

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Optimization of π – Gate AlGaN/AlN/GaN HEMTs for Low Noise and High Gain Applications

SILICON, 2022, Vol.14 (2), p.393-404

2022

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Effect of metallurgical step-graded quantum barrier on the performance of InGaN-based laser diode

Laser physics, 2023-11, Vol.33 (11), p.115801

2023

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Improvement in DC and pulse characteristics of AlGaN/GaN HEMT by employing dual metal gate structure

Semiconductor science and technology, 2019-10, Vol.34 (10), p.105013

2019

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Improvement in Schottky barrier inhomogeneities of Ni/AlGaN/GaN Schottky diodes after cumulative γ-ray irradiation

Semiconductor science and technology, 2021-06, Vol.36 (6), p.65012

2021

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Transient analysis of growth/decay in materials utilizing a digital exponential peeling method

International journal of numerical modelling, 2024-05, Vol.37 (3), p.n/a

2024

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Effect of compositionally co-related and orderly varying indium molar content on the performance of In0.15Ga0.85N/InxGa(1−x)N laser diode structure

Optical and quantum electronics, 2024-03, Vol.56 (3), Article 470

2024

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The Physics of Semiconductor Devices: Proceedings of IWPSD 2017

1st ed. 2019., 2019

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Study of “Thin Buffer” GaN on SiC HEMT and Effect of Bulk Traps on it

SILICON, 2022-12, Vol.14 (18), p.12505-12512

2022

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hbox/\hbox-Based Inductively Coupled Plasma Etching of GaN/AlGaN Using Photoresist Mask

IEEE transactions on plasma science, 2012-09, Vol.40 (9), p.2211-2220

2012

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Strategic enhancement of oxygen defects in ZnO from ZnS for water splitting to generate green electricity by hydroelectric cell

Applied materials today, 2023-10, Vol.34, p.101904, Article 101904

2023

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Experimental Study of the Influence of Process Pressure and Gas Composition on GaAs Etching Characteristics in Cl2/BCl3-Based Inductively Coupled Plasma

Plasma science & technology, 2011-04, Vol.13 (2), p.223-229

2011

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Memory effect in silicon nitride deposition using ICPCVD technique

Journal of theoretical and applied physics, 2019-12, Vol.13 (4), p.299-304

2019

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Etching of mesa structures in HgCdTe

Journal of electronic materials, 2005-11, Vol.34 (11), p.1440-1445

2005

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Suitability of thin-GaN for AlGaN/GaN HEMT material and device

Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors

Extraction of the edge/areal components and path of the reverse gate leakage in a GaN HEMT from measurements

Impact of heavy ion particle strike induced single event transients on conventional and π-Gate AlGaN/GaN HEMTs

On the Single-Event Burnout Performance of a GaN HEMT With Sunken Source-Connected Field Plate Architecture

Efficacy of Π-Gate in RF Power Performance of Thin GaN Buffer AlGaN/GaN HEMTs

Investigation of RF performance of Ku-band GaN HEMT device and an in-depth analysis of short channel effects

Proton irradiation effects on buffer-free gallium nitride on silicon carbide high electron mobility transistor-based radio frequency power amplifier

Impact of Gamma Radiations on Static, Pulsed I-V, and RF Performance Parameters of AlGaN/GaN HEMT

Efficacy of back barrier engineered Π-gate InAlN/GaN high electron mobility transistors for high-power applications

Ohmic contact morphology improvement with reduced resistance using Si/Au/Ti/Al/Ni/Au (AlGaN) and Si/Au/Ti/Al/Ni/Au (InAlN) stack layers in III-Nitride HEMTs

Impact of barrier layer thickness on DC and RF performance of AlGaN/GaN high electron mobility transistors

Optimization of π – Gate AlGaN/AlN/GaN HEMTs for Low Noise and High Gain Applications

Effect of metallurgical step-graded quantum barrier on the performance of InGaN-based laser diode

Improvement in DC and pulse characteristics of AlGaN/GaN HEMT by employing dual metal gate structure

Improvement in Schottky barrier inhomogeneities of Ni/AlGaN/GaN Schottky diodes after cumulative γ-ray irradiation

Transient analysis of growth/decay in materials utilizing a digital exponential peeling method

Effect of compositionally co-related and orderly varying indium molar content on the performance of In0.15Ga0.85N/InxGa(1−x)N laser diode structure

The Physics of Semiconductor Devices: Proceedings of IWPSD 2017

Study of “Thin Buffer” GaN on SiC HEMT and Effect of Bulk Traps on it

hbox/\hbox-Based Inductively Coupled Plasma Etching of GaN/AlGaN Using Photoresist Mask

Strategic enhancement of oxygen defects in ZnO from ZnS for water splitting to generate green electricity by hydroelectric cell

Experimental Study of the Influence of Process Pressure and Gas Composition on GaAs Etching Characteristics in Cl2/BCl3-Based Inductively Coupled Plasma

Memory effect in silicon nitride deposition using ICPCVD technique

Etching of mesa structures in HgCdTe

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