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New Advances of Cavitation Instabilities

Ravelet, Florent

2021

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Influence of oxygen plasma on electrical and physical parameters of Au–oxide–n-InP structures

Journal of applied physics, 2003-11, Vol.94 (10), p.6574-6578

2003

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Physical parameters of Au–n-InP structures

Journal of applied physics, 1999-05, Vol.85 (10), p.7209-7213

1999

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Numerical calibration of the angle of incidence in ellipsometers

Measurement science & technology, 1996-05, Vol.7 (5), p.768-775

1996

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An ellipsometric procedure for the characterization of very thin surface films on absorbing substrates

Applied surface science, 1995-10, Vol.90 (2), p.251-259

1995

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Transport processes in Au/n-InP and Au/oxide/n-InP devices treated in oxygen multipolar plasma

Materials science & engineering. B, Solid-state materials for advanced technology, 1993-06, Vol.20 (1), p.157-161

1993

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A new method for ellipsometric inversion with microcomputers: Characterization of optically absorbing films using multiple-angle-of-incidence

Surface science, 1989-06, Vol.216 (1), p.198-208

1989

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An inversion method for the complete characterization of transparent film-absorbing substrate systems using multiple angle ellipsometry

Solid-state electronics, 1992-06, Vol.35 (6), p.855-864

1992

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Numerical method for the ellipsometric determination of optical constants and thickness of thin films with microcomputers

Surface science, 1988, Vol.197 (1), p.339-345

1988

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Physica status solidi: March 16

Görlich

2021

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Photoluminescence characterization of structures obtained by multipolar plasma oxidation of InP

Materials science & engineering. B, Solid-state materials for advanced technology, 1993-06, Vol.20 (1), p.148-152

1993

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Effect of a finite r.f. conductance of native oxide on InP metal/insulator/semiconductor admittance

Thin solid films, 1987-07, Vol.150 (2), p.227-235

1987

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Interface properties of MIS structures prepared by plasma oxidation of n-InP

Semiconductor science and technology, 1986-08, Vol.1 (2), p.143-149

1986

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Barrier Height Study on Au-InP Schottky Diodes

March 16, 2021, Vol.46, Number 1, p.458-462

2021

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Preparation and electrical properties of thin native oxide double-layer insulator films on n-type InP

Physica status solidi. A, Applied research, 1987-05, Vol.101 (1), p.173-184

1987

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Copper diffusion and photovoltaic mechanisms at Cu-CdS contact

Journal of physics. D, Applied physics, 1979-11, Vol.12 (11), p.1917-1928

1979

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Correlation between open-circuit voltage and interface parameters at the AuCdS illuminated contact

Physica status solidi. A, Applied research, 1976-02, Vol.33 (2), p.517-523

1976

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The influence of chemisorption on photoconductivity in CdS crystals

Solid-state electronics, 1970-01, Vol.13 (9), p.1241-1248

1970

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Experimental study and electrical model of MIS n-InP structures prepared by oxidation in acid medium

Journal of physics. D, Applied physics, 1981-01, Vol.14 (7), p.1331-1342

1981

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Influence of metal-covered area on performance of solar cells

Electronics letters, 1984-08, Vol.20 (17), p.677-678

1984

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Microcomputer-controlled simulator of a photovoltaic generator using a programmable voltage generator

Solar cells, 1986-04, Vol.17 (2), p.383-390

1986

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A Method for Determining Interfacial Parameters of MIS Schottky Barriers

Physica status solidi. A, Applied research, 1979-07, Vol.54 (1), p.421-427

1979

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Results on heat treated AuCdS and CuCdS thin film schottky diodes

Physica status solidi. A, Applied research, 1974-04, Vol.22 (2), p.K191-K194

1974

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Determination by optical DLTS of the distribution of states near the valence band of plasma oxidized n-type Inp

Physica status solidi. A, Applied research, 1988-07, Vol.108 (1), p.K41-K46, Article K41

1988

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Barrier height study on AuInP Schottky diodes

Physica status solidi. A, Applied research, 1978-03, Vol.46 (1), p.K55-K59

1978

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New Advances of Cavitation Instabilities

Influence of oxygen plasma on electrical and physical parameters of Au–oxide–n-InP structures

Physical parameters of Au–n-InP structures

Numerical calibration of the angle of incidence in ellipsometers

An ellipsometric procedure for the characterization of very thin surface films on absorbing substrates

Transport processes in Au/n-InP and Au/oxide/n-InP devices treated in oxygen multipolar plasma

A new method for ellipsometric inversion with microcomputers: Characterization of optically absorbing films using multiple-angle-of-incidence

An inversion method for the complete characterization of transparent film-absorbing substrate systems using multiple angle ellipsometry

Numerical method for the ellipsometric determination of optical constants and thickness of thin films with microcomputers

Physica status solidi: March 16

Photoluminescence characterization of structures obtained by multipolar plasma oxidation of InP

Effect of a finite r.f. conductance of native oxide on InP metal/insulator/semiconductor admittance

Interface properties of MIS structures prepared by plasma oxidation of n-InP

Barrier Height Study on Au-InP Schottky Diodes

Preparation and electrical properties of thin native oxide double-layer insulator films on n-type InP

Copper diffusion and photovoltaic mechanisms at Cu-CdS contact

Correlation between open-circuit voltage and interface parameters at the AuCdS illuminated contact

The influence of chemisorption on photoconductivity in CdS crystals

Experimental study and electrical model of MIS n-InP structures prepared by oxidation in acid medium

Influence of metal-covered area on performance of solar cells

Microcomputer-controlled simulator of a photovoltaic generator using a programmable voltage generator

A Method for Determining Interfacial Parameters of MIS Schottky Barriers

Results on heat treated AuCdS and CuCdS thin film schottky diodes

Determination by optical DLTS of the distribution of states near the valence band of plasma oxidized n-type Inp

Barrier height study on AuInP Schottky diodes

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