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Second crossover energy of insulating materials using stationary electron beam under normal incidence

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2008-03, Vol.266 (5), p.719-729

2008

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A novel method for measuring the charging kinetics of dielectrics under electron irradiation in SEM

Micron (Oxford, England : 1993), 2023-10, Vol.173, p.103516-103516, Article 103516

2023

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Influence of ion implantation and electron pre-irradiation on charging of dielectrics under electron beam irradiation: Application to SiO2

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2019-12, Vol.460, p.141-146

2019

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Charging of dielectrics under ion irradiation

Vacuum, 2020-07, Vol.177, p.109373, Article 109373

2020

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3D surface topography imaging in SEM with improved backscattered electron detector: Arrangement and reconstruction algorithm

Ultramicroscopy, 2019-12, Vol.207, p.112830-112830, Article 112830

2019

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Information depth and spatial resolution in BSE microtomography in SEM

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1998-08, Vol.142 (4), p.523-534

1998

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The effect of contamination of dielectric target surfaces under electron irradiation

Applied surface science, 2008-01, Vol.254 (7), p.2110-2113

Rau, E.I.

2008

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Secondary electron emission and charging characteristics of ion-irradiated sapphire

Vacuum, 2016-07, Vol.129, p.142-147

2016

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Electron-beam charging of dielectrics preirradiated with moderate-energy ions and electrons

Physics of the solid state, 2017-08, Vol.59 (8), p.1526-1535

2017

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Determination of thickness of ultrathin surface films in nanostructures from the energy spectra of reflected electrons

Technical physics, 2015-10, Vol.60 (10), p.1515-1518

2015

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Updating of the toroidal electron spectrometer intended for a scanning electron microscope and its new applications in diagnostics of micro- and nanoelectronic structures

Technical physics, 2013-03, Vol.58 (3), p.447-454

2013

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Response function and optimum configuration of semiconductor backscattered-electron detectors for scanning electron microscopes

Semiconductors (Woodbury, N.Y.), 2012-06, Vol.46 (6), p.810-813

2012

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Analysis of two methods of measurement of surface potential of insulators in SEM: electron spectroscopy and X-ray spectroscopy methods

Applied surface science, 2001-06, Vol.177 (1), p.58-65

2001

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SEM and SIMS study of the buried Si xN y layer formed in silicon

Vacuum, 2009, Vol.83, p.S107-S110

2009

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A new experimental approach for characterizing the internal trapped charge and electric field build up in ground-coated insulators during their e − irradiation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2002-09, Vol.194 (3), p.302-310

2002

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Dynamic investigation of electron trapping and charge decay in electron-irradiated Al2O3 in a scanning electron microscope: Methodology and mechanisms

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2002-11, Vol.197 (1-2), p.114-127

2002

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SEM and SIMS study of the buried SixNy layer formed in silicon

Vacuum, 2009-05, Vol.83, p.S107-S110

2009

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Electron-acoustic and surface electron beam induced voltage signal formation in scanning electron microscopy analysis of semiconducting samples

Ultramicroscopy, 2004-11, Vol.101 (2-4), p.183-195

2004

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Formation of buried insulating island-like SiO 2 layer in silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 2005, Vol.124, p.341-344

2005

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Formation of buried insulating island-like SiO2 layer in silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124-125, p.341-344

2005

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In SEM Study of Physical Properties of Semiconductor by Surface Electron Beam Exciting Potential

Microscopy and microanalysis, 2001-08, Vol.7 (S2), p.486-487

2001

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Determination of diffusion length by the surface electron beam induced voltage method

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-04, Vol.91, p.256-259

2002

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Dynamic investigation of electron trapping and charge decay in electron-irradiated Al 2O 3 in a scanning electron microscope: Methodology and mechanisms

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2002, Vol.197 (1), p.114-127

2002

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Experimental determination of energy resolution and transmission characteristics of an electrostatic toroidal spectrometer adapted to a standard scanning electron microscope

Journal of electron spectroscopy and related phenomena, 1999-12, Vol.105 (2), p.119-127

1999

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In SEM a New Method for Nondestructive Internal Microtomography of Semiconductors and IC

Microscopy and microanalysis, 2001-08, Vol.7 (S2), p.488-489

2001

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Second crossover energy of insulating materials using stationary electron beam under normal incidence

A novel method for measuring the charging kinetics of dielectrics under electron irradiation in SEM

Influence of ion implantation and electron pre-irradiation on charging of dielectrics under electron beam irradiation: Application to SiO2

Charging of dielectrics under ion irradiation

3D surface topography imaging in SEM with improved backscattered electron detector: Arrangement and reconstruction algorithm

Information depth and spatial resolution in BSE microtomography in SEM

The effect of contamination of dielectric target surfaces under electron irradiation

Secondary electron emission and charging characteristics of ion-irradiated sapphire

Electron-beam charging of dielectrics preirradiated with moderate-energy ions and electrons

Determination of thickness of ultrathin surface films in nanostructures from the energy spectra of reflected electrons

Updating of the toroidal electron spectrometer intended for a scanning electron microscope and its new applications in diagnostics of micro- and nanoelectronic structures

Response function and optimum configuration of semiconductor backscattered-electron detectors for scanning electron microscopes

Analysis of two methods of measurement of surface potential of insulators in SEM: electron spectroscopy and X-ray spectroscopy methods

SEM and SIMS study of the buried Si xN y layer formed in silicon

A new experimental approach for characterizing the internal trapped charge and electric field build up in ground-coated insulators during their e − irradiation

Dynamic investigation of electron trapping and charge decay in electron-irradiated Al2O3 in a scanning electron microscope: Methodology and mechanisms

SEM and SIMS study of the buried SixNy layer formed in silicon

Electron-acoustic and surface electron beam induced voltage signal formation in scanning electron microscopy analysis of semiconducting samples

Formation of buried insulating island-like SiO 2 layer in silicon

Formation of buried insulating island-like SiO2 layer in silicon

In SEM Study of Physical Properties of Semiconductor by Surface Electron Beam Exciting Potential

Determination of diffusion length by the surface electron beam induced voltage method

Dynamic investigation of electron trapping and charge decay in electron-irradiated Al 2O 3 in a scanning electron microscope: Methodology and mechanisms

Experimental determination of energy resolution and transmission characteristics of an electrostatic toroidal spectrometer adapted to a standard scanning electron microscope

In SEM a New Method for Nondestructive Internal Microtomography of Semiconductors and IC

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