UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 354

Sortiert nach

Plasma-assisted molecular beam epitaxy of Al(Ga)N layers and quantum well structures for optically pumped mid-UV lasers on c-Al2O3

Semiconductor science and technology, 2014-08, Vol.29 (8)

2014

Volltextzugriff (PDF)

High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure

Advanced materials (Weinheim), 2016-09, Vol.28 (36), p.7978-7983

2016

Volltextzugriff (PDF)

Phase Diagram of Electron–Hole Liquid in Monolayer Heterostructures Based on Transition Metal Dichalcogenides

Journal of experimental and theoretical physics, 2021-10, Vol.133 (4), p.494-507

2021

Volltextzugriff (PDF)

Comparison of Characteristics of Thin PZT Films on Si-on-Sapphire and Si Substrates

Physics of the solid state, 2021-08, Vol.63 (8), p.1145-1152

2021

Volltextzugriff (PDF)

Kinetic limitations of stress relaxation and generation in GaN/AlN and AlGaN: Si/AlN heterostructures grown on c-sapphire by plasma-assisted molecular beam epitaxy

Journal of physics. Conference series, 2018-06, Vol.1038 (1), p.12061

2018

Volltextzugriff (PDF)

Control of threading dislocation density at the initial growth stage of AlN on c-sapphire in plasma-assisted MBE

Journal of crystal growth, 2013-09, Vol.378, p.319-322

2013

Volltextzugriff (PDF)

Structural and optical properties of PA MBE AlGaN quantum well heterostructures grown on c-Al2O3 by using flux- and temperature-modulated techniques

Journal of Materials Research, 2015-10, Vol.30 (19), p.2871-2880

2015

Volltextzugriff (PDF)

Structural Characterization of a Short-Period Superlattice Based on the CdF2/CaF2/Si(111) Heterostructure by Transmission Electron Microscopy and X-Ray Diffractometry

Technical physics letters, 2021-12, Vol.47 (12), p.893-896

2021

Volltextzugriff (PDF)

An Increase of Threading Dislocations Filtering Efficiency in Al2O3 Templates with Faceted Surface Morphology During a Growth by Molecular Beam Epitaxy

Technical physics letters, 2020-06, Vol.46 (6), p.543-547

2020

Volltextzugriff (PDF)

Stress evolution during growth of AlN templates on c-Al2O3 substrates by plasma-assisted molecular beam epitaxy

Journal of physics. Conference series, 2019-11, Vol.1400 (5), p.55010

2019

Volltextzugriff (PDF)

Decreasing Density of Grown-in Dislocations in AlN/c-Sapphire Templates Grown by Plasma-Activated Molecular Beam Epitaxy

Technical physics letters, 2020-04, Vol.46 (4), p.389-392

2020

Volltextzugriff (PDF)

Computed Tomography Imaging of Degenerative Disease in the Lumbar Spine

International journal of biomedicine, 2019-06, Vol.9 (2), p.182-184

2019

Volltextzugriff (PDF)

Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers

Semiconductors (Woodbury, N.Y.), 2018-06, Vol.52 (6), p.789-796

2018

Volltextzugriff (PDF)

On the Dispersion Relation of Plasmons in a Gapless-Graphene-Based Superlattice with Alternating Fermi Velocity

JETP letters, 2017-12, Vol.106 (12), p.810-814

Ratnikov, P. V.

2017

Volltextzugriff (PDF)

Stress in (Al, Ga)N heterostructures grown on 6H-SiC and Si substrates byplasma-assisted molecular beam epitaxy

Journal of physics. Conference series, 2017-11, Vol.917 (3), p.32018

2017

Volltextzugriff (PDF)

Electron-Hole Liquid in Monolayer Transition Metal Dichalcogenide Heterostructures

JETP letters, 2020, Vol.111 (2), p.90-95

2020

Volltextzugriff (PDF)

Control of stress and threading dislocation density in the thick GaN AlN buffer layers grown on Si (111) substrates by low- temperature MBE

Journal of physics. Conference series, 2016-08, Vol.741 (1), p.12025

2016

Volltextzugriff (PDF)

Excitons in planar quantum wells based on transition metal dichalcogenides

Physical review. B, 2020-08, Vol.102 (8), p.1, Article 085303

Ratnikov, Pavel V.

2020

Volltextzugriff (PDF)

Two-dimensional graphene electronics: current status and prospects

Physics Uspekhi, 2018-12, Vol.61 (12), p.1139-1174

2018

Volltextzugriff (PDF)

Surface plasmon polaritons in planar graphene superlattices

Physical review. B, 2020-03, Vol.101 (12), p.1, Article 125301

Ratnikov, Pavel V.

2020

Volltextzugriff (PDF)

On the dispersion relation of magnetoplasmons in a planar graphene-based superlattice

JETP letters, 2016-06, Vol.103 (12), p.774-779

Ratnikov, P. V.

2016

Volltextzugriff (PDF)

Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on c-sapphire substrates

Physics of the solid state, 2013-10, Vol.55 (10), p.2173-2181

2013

Volltextzugriff (PDF)

Metal–insulator transition in type II heterostructures based on transition metal dichalcogenides

Physics letters. A, 2024-08, Vol.517, p.129661, Article 129661

Ratnikov, Pavel V.

2024

Volltextzugriff (PDF)

Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in Al x Ga1 – x N:Si Layers Obtained by Ammonia Molecular Beam Epitaxy

Semiconductors (Woodbury, N.Y.), 2018-02, Vol.52 (2), p.221-225

2018

Volltextzugriff (PDF)

X-ray diffraction study of strain and defect structure of nonpolar a-plane GaN-layers grown on r-plane sapphire

Physica status solidi. A, Applications and materials science, 2009-08, Vol.206 (8), p.1757-1760

2009

Volltextzugriff (PDF)

1 – 25 von 354

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(313)
Mit Volltextzugriff
(318)

Publikationsform

Sprache

1 weiteren anzeigen...

Weniger anzeigen...

Erscheinungsjahr

n.n

Thema

Science & Technology
(188)
Physical Sciences
(136)
Physics
(116)
Technology
(62)
Materials Science
(49)
Physics, Condensed Matter
(43)
Physics, Applied
(37)
Physics And Astronomy
(36)
Materials Science, Multidisciplinary
(32)
Life Sciences & Biomedicine
(30)
Chemistry
(25)
Physics, Multidisciplinary
(23)
Animals
(21)
Chemistry And Materials Science
(21)
Humans
(20)
Molecular Beam Epitaxy
(20)
Physics, Particles & Fields
(16)
Biochemistry & Molecular Biology
(14)
Engineering
(14)
Solid State Physics
(14)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(3)

Menü

Weitere Dienste

Einstellungen

Plasma-assisted molecular beam epitaxy of Al(Ga)N layers and quantum well structures for optically pumped mid-UV lasers on c-Al2O3

High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure

Phase Diagram of Electron–Hole Liquid in Monolayer Heterostructures Based on Transition Metal Dichalcogenides

Comparison of Characteristics of Thin PZT Films on Si-on-Sapphire and Si Substrates

Kinetic limitations of stress relaxation and generation in GaN/AlN and AlGaN: Si/AlN heterostructures grown on c-sapphire by plasma-assisted molecular beam epitaxy

Control of threading dislocation density at the initial growth stage of AlN on c-sapphire in plasma-assisted MBE

Structural and optical properties of PA MBE AlGaN quantum well heterostructures grown on c-Al2O3 by using flux- and temperature-modulated techniques

Structural Characterization of a Short-Period Superlattice Based on the CdF2/CaF2/Si(111) Heterostructure by Transmission Electron Microscopy and X-Ray Diffractometry

An Increase of Threading Dislocations Filtering Efficiency in Al2O3 Templates with Faceted Surface Morphology During a Growth by Molecular Beam Epitaxy

Stress evolution during growth of AlN templates on c-Al2O3 substrates by plasma-assisted molecular beam epitaxy

Decreasing Density of Grown-in Dislocations in AlN/c-Sapphire Templates Grown by Plasma-Activated Molecular Beam Epitaxy

Computed Tomography Imaging of Degenerative Disease in the Lumbar Spine

Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers

On the Dispersion Relation of Plasmons in a Gapless-Graphene-Based Superlattice with Alternating Fermi Velocity

Stress in (Al, Ga)N heterostructures grown on 6H-SiC and Si substrates byplasma-assisted molecular beam epitaxy

Electron-Hole Liquid in Monolayer Transition Metal Dichalcogenide Heterostructures

Control of stress and threading dislocation density in the thick GaN AlN buffer layers grown on Si (111) substrates by low- temperature MBE

Excitons in planar quantum wells based on transition metal dichalcogenides

Two-dimensional graphene electronics: current status and prospects

Surface plasmon polaritons in planar graphene superlattices

On the dispersion relation of magnetoplasmons in a planar graphene-based superlattice

Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on c-sapphire substrates

Metal–insulator transition in type II heterostructures based on transition metal dichalcogenides

Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in Al x Ga1 – x N:Si Layers Obtained by Ammonia Molecular Beam Epitaxy

X-ray diffraction study of strain and defect structure of nonpolar a-plane GaN-layers grown on r-plane sapphire

Suchergebnisse filtern