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Source of High-Power, High-Repetition-Rate, Pulsed Laser Radiation (1060 nm) Based on a Hybrid Stack of a Laser Diode Bar and a 2D Array of Optothyristors as a High-Speed Current Switch

Bulletin of the Lebedev Physics Institute, 2023-10, Vol.50 (Suppl 5), p.S527-S534

2023

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On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions

Semiconductors (Woodbury, N.Y.), 2016-09, Vol.50 (9), p.1225-1230

2016

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Spectral characteristics of multimode semiconductor lasers with a high-order surface diffraction grating

Quantum electronics (Woodbury, N.Y.), 2014-01, Vol.44 (10), p.907-911, Article 907

2014

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Implementation of energy barrier layers for 1550 nm high-power laser diodes

Journal of luminescence, 2023-11, Vol.263, p.120164, Article 120164

2023

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Kelvin probe force and surface photovoltage microscopy observation of minority holes leaked from active region of working InGaAs∕AlGaAs∕GaAs laser diode

Journal of applied physics, 2007-01, Vol.101 (2)

2007

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Sensor composites consisting of a ceramic substrate and thin films of TbO x oxides and (TbO x )0.5(YO1.5)0.5 solid solutions

Glass physics and chemistry, 2009-10, Vol.35 (5), p.525-530

2009

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Energy Barrier Layers and Internal Optical Loss in 1400-1600 nm Semiconductor Lasers

2020 International Conference Laser Optics (ICLO), 2020, p.1-1

2020

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ONCE AGAIN ABOUT THE MEANING OF THE TERM “MANUBIAE”

Antichnyĭ mir i arkheologii͡a, 2022-01, Vol.20, p.89-98

Rastegaeva, M. N.

2022

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Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm

Semiconductors (Woodbury, N.Y.), 2014-03, Vol.48 (3), p.373-376

2014

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The influence of temperature treatment on the formation of Ni-based Schottky diodes and ohmic contacts to n-6H-SiC

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-04, Vol.46 (1), p.254-258

1997

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High-efficiency (49%) and high-power photovoltaic cells based on gallium antimonide

Semiconductors (Woodbury, N.Y.), 2006-10, Vol.40 (10), p.1242-1246

2006

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Large area silicon carbide devices fabricated on SiC wafers with reduced micropipe density

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-07, Vol.61, p.446-449

1999

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850-nm diode lasers with different ways of compensating for internal mechanical stresses in an AlGaAs:P/GaAs heterostructure

Semiconductors (Woodbury, N.Y.), 2013-08, Vol.47 (8), p.1075-1078

2013

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Thermal delocalization of carriers in semiconductor lasers (λ = 1010–1070 nm)

Semiconductors (Woodbury, N.Y.), 2012-09, Vol.46 (9), p.1207-1210

2012

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Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures

Semiconductors (Woodbury, N.Y.), 2014-05, Vol.48 (5), p.691-696

2014

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A decrease in ohmic losses and an increase in power in GaSb photovoltaic converters

Semiconductors (Woodbury, N.Y.), 2011-09, Vol.45 (9), p.1219-1226

2011

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Influence of proton irradiation on recombination current in 6H–SiC pn structures

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-07, Vol.61, p.441-445

1999

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High-order diffraction gratings for high-power semiconductor lasers

Semiconductors (Woodbury, N.Y.), 2012-02, Vol.46 (2), p.241-246

2012

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Surface barrier height in metal-n-6H-SiC structures

Materials science & engineering. B, Solid-state materials for advanced technology, 1995, Vol.29 (1), p.198-201

1995

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Temperature Dependence of the Threshold Current of QW Lasers

Semiconductors (Woodbury, N.Y.), 2005, Vol.39 (10), p.1210

Bazhenov, N. L.

2005

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InGaAs/GaAs/AlGaAs lasers emitting at a wavelength of 1190 nm grown by MOCVD epitaxy on GaAs substrate

Semiconductors (Woodbury, N.Y.), 2010-12, Vol.44 (12), p.1592-1596

2010

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Doping of 6H–SiC pn structures by proton irradiation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1999, Vol.147 (1), p.74-78

1999

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Silicon Carbide Epitaxial Layers Grown ON SiC Wafers With Reduced Micropipe Density

MRS proceedings, 1998, Vol.512, Article 131

1998

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Kelvin probe force and surface photovoltage microscopy observationof minority holes leaked from active region of working In Ga As ∕ Al Ga As ∕ Ga As laser diode

Journal of applied physics, 2007-01, Vol.101 (2), p.024504-024504-8

2007

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Effect of boron diffusion on the high-voltage behavior of 6H-SiC p + nn + structures

Journal of applied physics, 1996-11, Vol.80 (9), p.5464-5468

1996

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Source of High-Power, High-Repetition-Rate, Pulsed Laser Radiation (1060 nm) Based on a Hybrid Stack of a Laser Diode Bar and a 2D Array of Optothyristors as a High-Speed Current Switch

On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions

Spectral characteristics of multimode semiconductor lasers with a high-order surface diffraction grating

Implementation of energy barrier layers for 1550 nm high-power laser diodes

Kelvin probe force and surface photovoltage microscopy observation of minority holes leaked from active region of working InGaAs∕AlGaAs∕GaAs laser diode

Sensor composites consisting of a ceramic substrate and thin films of TbO x oxides and (TbO x )0.5(YO1.5)0.5 solid solutions

Energy Barrier Layers and Internal Optical Loss in 1400-1600 nm Semiconductor Lasers

ONCE AGAIN ABOUT THE MEANING OF THE TERM “MANUBIAE”

Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm

The influence of temperature treatment on the formation of Ni-based Schottky diodes and ohmic contacts to n-6H-SiC

High-efficiency (49%) and high-power photovoltaic cells based on gallium antimonide

Large area silicon carbide devices fabricated on SiC wafers with reduced micropipe density

850-nm diode lasers with different ways of compensating for internal mechanical stresses in an AlGaAs:P/GaAs heterostructure

Thermal delocalization of carriers in semiconductor lasers (λ = 1010–1070 nm)

Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures

A decrease in ohmic losses and an increase in power in GaSb photovoltaic converters

Influence of proton irradiation on recombination current in 6H–SiC pn structures

High-order diffraction gratings for high-power semiconductor lasers

Surface barrier height in metal-n-6H-SiC structures

Temperature Dependence of the Threshold Current of QW Lasers

InGaAs/GaAs/AlGaAs lasers emitting at a wavelength of 1190 nm grown by MOCVD epitaxy on GaAs substrate

Doping of 6H–SiC pn structures by proton irradiation

Silicon Carbide Epitaxial Layers Grown ON SiC Wafers With Reduced Micropipe Density

Kelvin probe force and surface photovoltage microscopy observationof minority holes leaked from active region of working In Ga As ∕ Al Ga As ∕ Ga As laser diode

Effect of boron diffusion on the high-voltage behavior of 6H-SiC p + nn + structures

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