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Modeling of Semiconductor Substrates for RF Applications: Part I-Static and Dynamic Physics of Carriers and Traps

IEEE transactions on electron devices, 2021-09, Vol.68 (9), p.4598-4605

2021

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Modeling of Semiconductor Substrates for RF Applications: Part II-Parameter Impact on Harmonic Distortion

IEEE transactions on electron devices, 2021-09, Vol.68 (9), p.4606-4613

2021

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Low-Loss Si-Substrates Enhanced Using Buried PN Junctions for RF Applications

IEEE electron device letters, 2019-05, Vol.40 (5), p.690-693

2019

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Inter- and intragranular plasticity mechanisms in ultrafine-grained Al thin films: An in situ TEM study

Acta materialia, 2013-01, Vol.61 (1), p.205-216

2013

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Extrinsic mechanical size effects in thin ZrNi metallic glass films

Acta materialia, 2015-05, Vol.90, p.232-241

2015

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On the Separate Extraction of Self-Heating and Substrate Effects in FD-SOI MOSFET

IEEE electron device letters, 2021-05, Vol.42 (5), p.665-668

2021

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Novel class of nanostructured metallic glass films with superior and tunable mechanical properties

Acta materialia, 2021-07, Vol.213, p.116955, Article 116955

2021

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Twisted Bi-Layer Graphene: Microscopic Rainbows

Small (Weinheim an der Bergstrasse, Germany), 2013-10, Vol.9 (19), p.3247-3251

2013

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Crack on a chip test method for thin freestanding films

Journal of the mechanics and physics of solids, 2019-02, Vol.123, p.267-291

2019

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Inkjet-printed frequency-selective surfaces based on carbon nanotubes for ultra-wideband thin microwave absorbers

Journal of materials science. Materials in electronics, 2020-02, Vol.31 (3), p.2190-2201

2020

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Dislocation-mediated relaxation in nanograined columnar palladium films revealed by on-chip time-resolved HRTEM testing

Nature communications, 2015-01, Vol.6 (1), p.5922-5922, Article 5922

2015

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UTBB SOI MOSFETs analog figures of merit: Effects of ground plane and asymmetric double-gate regime

Solid-state electronics, 2013-12, Vol.90, p.56-64

2013

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Assessment of 28 nm UTBB FD-SOI technology platform for RF applications: Figures of merit and effect of parasitic elements

Solid-state electronics, 2016-03, Vol.117, p.130-137

2016

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Adhesionless and near-ideal contact behavior of graphene on Cu thin film

Carbon (New York), 2017-10, Vol.122, p.446-450

2017

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Ellipsometry-based conductivity extraction in case of phosphorus doped polysilicon

Journal of materials science. Materials in electronics, 2018-07, Vol.29 (14), p.11627-11636

2018

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Analog/RF performance of multiple gate SOI devices: wideband simulations and characterization

IEEE transactions on electron devices, 2006-05, Vol.53 (5), p.1088-1095

2006

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High strength-ductility of thin nanocrystalline palladium films with nanoscale twins: On-chip testing and grain aggregate model

Acta materialia, 2012-02, Vol.60 (4), p.1795-1806

2012

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Effect of parasitic elements on UTBB FD SOI MOSFETs RF figures of merit

Solid-state electronics, 2014-07, Vol.97, p.38-44

2014

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Creep behavior of submicron copper films under irradiation

Acta materialia, 2017-06, Vol.131, p.77-87

2017

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High-resistivity with PN interface passivation in 22 nm FD-SOI technology for low-loss passives at RF and millimeter-wave frequencies

Solid-state electronics, 2023-07, Vol.205, p.108656, Article 108656

2023

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New substrate passivation method dedicated to HR SOI wafer fabrication with increased substrate resistivity

IEEE electron device letters, 2005-11, Vol.26 (11), p.805-807

2005

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Size dependent fracture strength and cracking mechanisms in freestanding polycrystalline silicon films with nanoscale thickness

Engineering fracture mechanics, 2016-12, Vol.168, p.190-203

2016

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Comparison of self-heating and its effect on analogue performance in 28 nm bulk and FDSOI

Solid-state electronics, 2016-01, Vol.115, p.219-224

2016

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Ultra-thin body and thin-BOX SOI CMOS technology analog figures of merit

Solid-state electronics, 2012-04, Vol.70, p.50-58

2012

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Low-temperature wafer bonding: a study of void formation and influence on bonding strength

Journal of microelectromechanical systems, 2005-04, Vol.14 (2), p.368-382

2005

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Modeling of Semiconductor Substrates for RF Applications: Part I-Static and Dynamic Physics of Carriers and Traps

Modeling of Semiconductor Substrates for RF Applications: Part II-Parameter Impact on Harmonic Distortion

Low-Loss Si-Substrates Enhanced Using Buried PN Junctions for RF Applications

Inter- and intragranular plasticity mechanisms in ultrafine-grained Al thin films: An in situ TEM study

Extrinsic mechanical size effects in thin ZrNi metallic glass films

On the Separate Extraction of Self-Heating and Substrate Effects in FD-SOI MOSFET

Novel class of nanostructured metallic glass films with superior and tunable mechanical properties

Twisted Bi-Layer Graphene: Microscopic Rainbows

Crack on a chip test method for thin freestanding films

Inkjet-printed frequency-selective surfaces based on carbon nanotubes for ultra-wideband thin microwave absorbers

Dislocation-mediated relaxation in nanograined columnar palladium films revealed by on-chip time-resolved HRTEM testing

UTBB SOI MOSFETs analog figures of merit: Effects of ground plane and asymmetric double-gate regime

Assessment of 28 nm UTBB FD-SOI technology platform for RF applications: Figures of merit and effect of parasitic elements

Adhesionless and near-ideal contact behavior of graphene on Cu thin film

Ellipsometry-based conductivity extraction in case of phosphorus doped polysilicon

Analog/RF performance of multiple gate SOI devices: wideband simulations and characterization

High strength-ductility of thin nanocrystalline palladium films with nanoscale twins: On-chip testing and grain aggregate model

Effect of parasitic elements on UTBB FD SOI MOSFETs RF figures of merit

Creep behavior of submicron copper films under irradiation

High-resistivity with PN interface passivation in 22 nm FD-SOI technology for low-loss passives at RF and millimeter-wave frequencies

New substrate passivation method dedicated to HR SOI wafer fabrication with increased substrate resistivity

Size dependent fracture strength and cracking mechanisms in freestanding polycrystalline silicon films with nanoscale thickness

Comparison of self-heating and its effect on analogue performance in 28 nm bulk and FDSOI

Ultra-thin body and thin-BOX SOI CMOS technology analog figures of merit

Low-temperature wafer bonding: a study of void formation and influence on bonding strength

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