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Physical model for enhanced interface-trap formation at low dose rates

IEEE transactions on nuclear science, 2002-12, Vol.49 (6), p.2650-2655

2002

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Effects of hydrogen motion on interface trap formation and annealing

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3158-3165

2004

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Effects of Hydrogen on the Radiation Response of Bipolar Transistors: Experiment and Modeling

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.3039-3045

2008

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Electronic Band Structure of SiC Polytypes: A Discussion of Theory and Experiment

physica status solidi (b), 1997-07, Vol.202 (1), p.5-33

1997

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Quasiclassical theory of spontaneous currents at surfaces and interfaces of d-wave superconductors

Physica. B, Condensed matter, 2002-06, Vol.318 (2), p.162-179

2002

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Charge trapping in irradiated SOI wafers measured by second harmonic generation

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3231-3237

2004

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Statistical modeling of radiation-induced proton transport in silicon: deactivation of dopant acceptors in bipolar devices

IEEE transactions on nuclear science, 2003-12, Vol.50 (6), p.1896-1900

2003

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Molecular electronics by the numbers

IEEE transactions on nanotechnology, 2002-03, Vol.1 (1), p.86-90

2002

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Dopants adsorbed as single atoms prevent degradation of catalysts

Nature materials, 2004-03, Vol.3 (3), p.143-146

2004

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Proton-induced defect generation at the Si-SiO/sub 2/ interface

IEEE transactions on nuclear science, 2001-12, Vol.48 (6), p.2086-2092

2001

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The E′ center and oxygen vacancies in SiO2

Journal of non-crystalline solids, 2008-01, Vol.354 (2-9), p.217-223

2008

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Dual Behavior of H+at Si SiO2Interfaces: Mobility versus Trapping

Applied physics letters, 2002-09, Vol.81 (10)

Rashkeev, S.N.

2002

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Implementing first principles calculations of defect migration in a fuel performance code for UN simulations

Journal of nuclear materials, 2009-09, Vol.393 (2), p.292-299

2009

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Contactless ultra-fast laser probing of radiation-induced leakage current in ultra-thin oxides

IEEE transactions on nuclear science, 2003-12, Vol.50 (6), p.1929-1933

2003

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Hydrogen in MOSFETs – A primary agent of reliability issues

Microelectronics and reliability, 2007-06, Vol.47 (6), p.903-911

2007

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Performance, reliability, radiation effects, and aging issues in microelectronics – From atomic-scale physics to engineering-level modeling

Solid-state electronics, 2010-09, Vol.54 (9), p.841-848

2010

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Reactions of hydrogen with Si-SiO2 interfaces

IEEE transactions on nuclear science, 2000-12, Vol.47 (6), p.2262-2268

2000

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Proton-induced defect generation at the Si-SiO2 interface

IEEE transactions on nuclear science, 2001-12, Vol.48 (6), p.2086-2092

2001

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Single Hf atoms inside the ultrathin SiO2 interlayer between a HfO2 dielectric film and the Si substrate: How do they modify the interface?

Microelectronic engineering, 2005-06, Vol.80, p.416-419

2005

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Soft disorder effects in the conductance quantization in quantum point contacts: Indirect backscattering statistics

Solid state communications, 1996, Vol.97 (4), p.279-283

1996

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From Band Structures to Linear and Nonlinear Optical Spectra in Semiconductors

physica status solidi (b), 2000-01, Vol.217 (1), p.599-640

2000

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The origin of photoluminescence lines in irradiated amorphous SiO/sub 2

IEEE transactions on nuclear science, 2002-12, Vol.49 (6), p.2713-2717

2002

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The origin of photoluminescence lines in irradiated amorphous SiO2

IEEE transactions on nuclear science, 2002-12, Vol.49 (6), p.2713-2717

2002

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Laser detection of radiation enhanced electron transport in ultra-thin oxides

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2003-11, Vol.514 (1-3), p.150-155

2003

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Eckhaus instability – a possible wavelength changing mechanism in the evolution of dislocation patterns

Computational materials science, 2001-06, Vol.21 (2), p.230-242

2001

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Physical model for enhanced interface-trap formation at low dose rates

Effects of hydrogen motion on interface trap formation and annealing

Effects of Hydrogen on the Radiation Response of Bipolar Transistors: Experiment and Modeling

Electronic Band Structure of SiC Polytypes: A Discussion of Theory and Experiment

Quasiclassical theory of spontaneous currents at surfaces and interfaces of d-wave superconductors

Charge trapping in irradiated SOI wafers measured by second harmonic generation

Statistical modeling of radiation-induced proton transport in silicon: deactivation of dopant acceptors in bipolar devices

Molecular electronics by the numbers

Dopants adsorbed as single atoms prevent degradation of catalysts

Proton-induced defect generation at the Si-SiO/sub 2/ interface

The E′ center and oxygen vacancies in SiO2

Dual Behavior of H+at Si SiO2Interfaces: Mobility versus Trapping

Implementing first principles calculations of defect migration in a fuel performance code for UN simulations

Contactless ultra-fast laser probing of radiation-induced leakage current in ultra-thin oxides

Hydrogen in MOSFETs – A primary agent of reliability issues

Performance, reliability, radiation effects, and aging issues in microelectronics – From atomic-scale physics to engineering-level modeling

Reactions of hydrogen with Si-SiO2 interfaces

Proton-induced defect generation at the Si-SiO2 interface

Single Hf atoms inside the ultrathin SiO2 interlayer between a HfO2 dielectric film and the Si substrate: How do they modify the interface?

Soft disorder effects in the conductance quantization in quantum point contacts: Indirect backscattering statistics

From Band Structures to Linear and Nonlinear Optical Spectra in Semiconductors

The origin of photoluminescence lines in irradiated amorphous SiO/sub 2

The origin of photoluminescence lines in irradiated amorphous SiO2

Laser detection of radiation enhanced electron transport in ultra-thin oxides

Eckhaus instability – a possible wavelength changing mechanism in the evolution of dislocation patterns

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