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InSbN based p-n junctions for infrared photodetection

Electronics letters, 2010-05, Vol.46 (11), p.787-788

2010

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An approach to the design of highly selective resonant-cavity-enhanced photodetectors

Applied physics letters, 2005-04, Vol.86 (17), p.171104-171104-3

2005

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Electronic and vibronic properties of Mg-doped GaN: The influence of etching and annealing

Journal of applied physics, 2002-03, Vol.91 (5), p.3398-3407

2002

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Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 chemistry

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2001-09, Vol.19 (5), p.2522-2532

2001

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Micro-Raman scattering in laterally epitaxial overgrown GaN

Journal of applied physics, 2002-05, Vol.91 (9), p.5840-5852

2002

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Integration of indium phosphide thin film structures on silicon substrates by direct wafer bonding

Journal of physics. Conference series, 2006-04, Vol.34 (1), p.404-409

2006

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Electronic and vibronic properties of n-type GaN: the influence of etching and annealing

Journal of physics. Condensed matter, 2002-05, Vol.14 (17), p.4461-4476, Article 317

2002

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GaN and ZnO freestanding micromechanical structures on silicon-on-insulator substrates

Physica status solidi. A, Applications and materials science, 2008-05, Vol.205 (5), p.1168-1172

2008

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Bonding and diffusion of nitrogen in the InSbN alloys fabricated by two-step ion implantation

Applied physics letters, 2012-07, Vol.101 (2)

2012

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Inductively coupled plasma etching of GaN using BCl3/Cl2 chemistry and photoluminescence studies of the etched samples

Semiconductor science and technology, 2000-04, Vol.15 (4), p.386-389

2000

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Photoluminescence observations in band-gap tailored InGaAlAs epilayers lattice matched to InP substrate

Journal of applied physics, 1996-10, Vol.80 (8), p.4604-4608

1996

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Study of electrically active defects in n-GaN layer

Materials science in semiconductor processing, 2001-12, Vol.4 (6), p.595-600

2001

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Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealing

Semiconductor science and technology, 2000-06, Vol.15 (6), p.585-588

2000

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Realization of freestanding InP membranes on Si by low-temperature wafer bonding and stress analysis using micro-Raman spectroscopy

Applied physics letters, 2006-05, Vol.88 (22), p.221901-221901-3

2006

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Structural characterization of rapid thermal oxidized Si1−x−yGexCy alloy films grown by rapid thermal chemical vapor deposition

Journal of applied physics, 2000-01, Vol.87 (1), p.192-197

2000

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InSbN based p-n junctions for infrared photodetection

Electronics letters, 2010-05, Vol.46 (11), p.1-1

2010

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Neural networks in fisheries research

Fisheries research, 2008-08, Vol.92 (2), p.115-139

2008

Volltextzugriff (PDF)

Heavily silicon doped InGaAlAs/InP epilayers grown by molecular beam epitaxy

Journal of crystal growth, 1995-11, Vol.156 (3), p.186-190

1995

Volltextzugriff (PDF)

Effect of rapid thermal annealing on the structural and electrical properties of a silicon-silicon oxide system

Journal of applied physics, 1995-10, Vol.78 (7), p.4390-4394

1995

Volltextzugriff (PDF)

Application of Low Temperature InP Wafer Bonding Towards Optical Add/Drop Multiplexer Realization

MRS proceedings, 2004, Vol.829, Article B2.14

2004

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Variable Pinch-Off GaAs MESFET

October 16, 2021, Vol.91, Number 2, p.825-828

2021

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Luminescence anomaly in band gap tailored In0.53(GaxAl1 − x)0.47As quaternary alloy grown by molecular beam epitaxy

Journal of crystal growth, 1997-05, Vol.175-176, p.1294-1298

1997

Volltextzugriff (PDF)

Luminescence anomaly in band gap tailored In 0.53(Ga xAl 1 − x) 0.47As quaternary alloy grown by molecular beam epitaxy

Journal of crystal growth, 1997, Vol.175, p.1294-1298

1997

Volltextzugriff (PDF)

Lattice vibrations in In1− x − y Ga x Al y As quaternary alloys

Journal of applied physics, 1996-12, Vol.80 (12), p.7157-7159

1996

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MEMS tunable fabry-perot optical filter

IEEE/LEOS International Conference on Optical MEMS and Their Applications Conference, 2005, 2005, p.157-158

2005

Volltextzugriff (PDF)

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InSbN based p-n junctions for infrared photodetection

An approach to the design of highly selective resonant-cavity-enhanced photodetectors

Electronic and vibronic properties of Mg-doped GaN: The influence of etching and annealing

Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 chemistry

Micro-Raman scattering in laterally epitaxial overgrown GaN

Integration of indium phosphide thin film structures on silicon substrates by direct wafer bonding

Electronic and vibronic properties of n-type GaN: the influence of etching and annealing

GaN and ZnO freestanding micromechanical structures on silicon-on-insulator substrates

Bonding and diffusion of nitrogen in the InSbN alloys fabricated by two-step ion implantation

Inductively coupled plasma etching of GaN using BCl3/Cl2 chemistry and photoluminescence studies of the etched samples

Photoluminescence observations in band-gap tailored InGaAlAs epilayers lattice matched to InP substrate

Study of electrically active defects in n-GaN layer

Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealing

Realization of freestanding InP membranes on Si by low-temperature wafer bonding and stress analysis using micro-Raman spectroscopy

Structural characterization of rapid thermal oxidized Si1−x−yGexCy alloy films grown by rapid thermal chemical vapor deposition

InSbN based p-n junctions for infrared photodetection

Neural networks in fisheries research

Heavily silicon doped InGaAlAs/InP epilayers grown by molecular beam epitaxy

Effect of rapid thermal annealing on the structural and electrical properties of a silicon-silicon oxide system

Application of Low Temperature InP Wafer Bonding Towards Optical Add/Drop Multiplexer Realization

Variable Pinch-Off GaAs MESFET

Luminescence anomaly in band gap tailored In0.53(GaxAl1 − x)0.47As quaternary alloy grown by molecular beam epitaxy

Luminescence anomaly in band gap tailored In 0.53(Ga xAl 1 − x) 0.47As quaternary alloy grown by molecular beam epitaxy

Lattice vibrations in In1− x − y Ga x Al y As quaternary alloys

MEMS tunable fabry-perot optical filter

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