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Slight gate oxide thickness increase in PMOS devices with BF2 implanted polysilicon gate

IEEE electron device letters, 1998-09, Vol.19 (9), p.348-350

1998

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A comprehensive study of performance and reliability of P, As, and hybrid As/P nLDD junctions for deep-submicron CMOS logic technology

IEEE electron device letters, 1997-06, Vol.18 (6), p.281-283

1997

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Characterization and optimization of metal etch processes to minimize charging damage to submicron transistor gate oxide

IEEE electron device letters, 1994-01, Vol.15 (1), p.25-27

1994

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Significant increased recurrence rates among breast cancer patients with HER2-positive, T1a,bN0M0 tumors

Cancer research (Chicago, Ill.), 2009-01, Vol.69 (2_Supplement), p.701

2009

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Slight gate oxide thickness increase in PMOS devices with BF 2 implanted polysilicon gate

IEEE electron device letters, 1998-09, Vol.19 (9), p.348-350

1998

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A comparison of inverter-type circuit lifetime and quasi-static analysis of NMOSFET lifetime

29th Annual Proceedings Reliability Physics 1991, 1991, p.112-117

1991

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Process induced oxide damage and its implications to device reliability of submicron transistors

31st Annual Proceedings Reliability Physics 1993, 1993, p.293-296

1993

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Slight gate oxide thickness increase in PMOS devices with BF(2) implanted polysilicon gate

IEEE electron device letters, 1998-09, Vol.19 (9), p.348-350

1998

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The Preparation of 4,5-Dihydro-3-Aryl-Naphth-[1,2-c]- Isoxazoles From Dilithiated 1-Tetralone Oxime and Aromatic Esters

Synthetic communications, 2000-09, Vol.30 (18), p.3391-3404

2000

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An investigation of hot carrier effects in submicron CMOS integrated circuits

Microelectronics and reliability, 1993, Vol.33 (11), p.1713-1727

1993

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Impact of boron penetration at the p/sup +/-poly/gate-oxide interface on the device reliability of deep submicron CMOS logic technology

1996 International Integrated Reliability Workshop Final Report, 1996, p.116-118

1996

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A new technique to measure thin oxide thickness in IC manufacturing

IEEE 1995 International Integrated Reliability Workshop. Final Report, 1995, p.160

1995

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An investigation of the time dependence of current degradation in MOS devices

27th Annual Proceedings., International Reliability Physics Symposium, 1989, p.103-109

1989

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Drain-avalanche induced hole injection and generation of interface traps in thin oxide MOS devices

28th Annual Proceedings on Reliability Physics Symposium, 1990, p.150-153

1990

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High Risk of Recurrence for Patients With Breast Cancer Who Have Human Epidermal Growth Factor Receptor 2–Positive, Node-Negative Tumors 1 cm or Smaller

Journal of clinical oncology, 2009-12, Vol.27 (34), p.5700-5706

2009

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Slight gate oxide thickness increase in PMOS devices with BF2 implanted polysilicon gate

A comprehensive study of performance and reliability of P, As, and hybrid As/P nLDD junctions for deep-submicron CMOS logic technology

Characterization and optimization of metal etch processes to minimize charging damage to submicron transistor gate oxide

Significant increased recurrence rates among breast cancer patients with HER2-positive, T1a,bN0M0 tumors

Slight gate oxide thickness increase in PMOS devices with BF 2 implanted polysilicon gate

A comparison of inverter-type circuit lifetime and quasi-static analysis of NMOSFET lifetime

Process induced oxide damage and its implications to device reliability of submicron transistors

Slight gate oxide thickness increase in PMOS devices with BF(2) implanted polysilicon gate

The Preparation of 4,5-Dihydro-3-Aryl-Naphth-[1,2-c]- Isoxazoles From Dilithiated 1-Tetralone Oxime and Aromatic Esters

An investigation of hot carrier effects in submicron CMOS integrated circuits

Impact of boron penetration at the p/sup +/-poly/gate-oxide interface on the device reliability of deep submicron CMOS logic technology

A new technique to measure thin oxide thickness in IC manufacturing

An investigation of the time dependence of current degradation in MOS devices

Drain-avalanche induced hole injection and generation of interface traps in thin oxide MOS devices

High Risk of Recurrence for Patients With Breast Cancer Who Have Human Epidermal Growth Factor Receptor 2–Positive, Node-Negative Tumors 1 cm or Smaller

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