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Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects

Journal of applied physics, 2021-10, Vol.130 (16)

2021

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A unified static-dynamic analytic model for ultra-scaled III-nitride high electron mobility transistors

Journal of applied physics, 2019-04, Vol.125 (13)

2019

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Evaluation of the Potential Performance of Graphene Nanoribbons as On-Chip Interconnects

Proceedings of the IEEE, 2013-07, Vol.101 (7), p.1740-1765

2013

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IEEE_Xplore

Impact of strain on the SOT-driven dynamics of thin film Mn3Sn

Journal of applied physics, 2024-03, Vol.135 (12)

2024

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Control-gate-free reconfigurable transistor based on 2D MoTe2 with asymmetric gating

Applied physics letters, 2024-02, Vol.124 (7)

2024

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Guest Editorial: Dimensional Scaling of Material Functional Properties to Meet Back-End-of-Line (BEOL) Challenges

Applied physics letters, 2023-07, Vol.123 (3)

2023

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Voltage controlled Néel vector rotation in zero magnetic field

Nature communications, 2021-03, Vol.12 (1), p.1674-1674, Article 1674

2021

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Dispersion characteristics of THz surface plasmons in nonlinear graphene-based parallel-plate waveguide with Kerr-type core dielectric

Journal of applied physics, 2017-08, Vol.122 (8)

2017

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A spin-based true random number generator exploiting the stochastic precessional switching of nanomagnets

Journal of applied physics, 2017-06, Vol.121 (22)

2017

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Anisotropy-driven quantum capacitance in multi-layered black phosphorus

Applied physics letters, 2017-10, Vol.111 (16)

2017

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Voltage tunable plasmon propagation in dual gated bilayer graphene

Journal of applied physics, 2017-10, Vol.122 (15)

2017

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Modeling and Evaluation of Echo-State Networks Using Spin Torque Nano-Oscillators

IEEE journal on exploratory solid-state computational devices and circuits, 2023-12, Vol.9 (2), p.134-142

2023

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Spin-Orbit Torque Devices for Hardware Security: From Deterministic to Probabilistic Regime

IEEE transactions on computer-aided design of integrated circuits and systems, 2020-08, Vol.39 (8), p.1591-1606

2020

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IEEE_Xplore

Terahertz band communication using plasma wave propagation in multilayer graphene heterostructures

IET cyber-physical systems, 2018-06, Vol.3 (2), p.89-98

Rakheja, Shaloo

2018

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Order parameter dynamics in Mn3Sn driven by DC and pulsed spin–orbit torques

APL materials, 2023-09, Vol.11 (9), p.091110-091110-13

2023

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Temperature-resilient random number generation with stochastic actuated magnetic tunnel junction devices

Applied physics letters, 2024-01, Vol.124 (5)

2024

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Dynamics of magnetoelectric reversal of an antiferromagnetic domain

Physical review applied, 2019-03, Vol.11 (3), Article 034051

2019

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A virtual-source emission-diffusion I-V model for ultra-thin black phosphorus field-effect transistors

Journal of applied physics, 2019-04, Vol.125 (16)

2019

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The Next Era in Hardware Security: A Perspective on Emerging Technologies for Secure Electronics

1st Edition 2021, 2021

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Design considerations for gallium arsenide pulse compression photoconductive switch

Journal of applied physics, 2022-04, Vol.131 (13)

2022

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Analytic modeling of dipolar field requirements for robust coupling in a non-identical biaxial two-magnet system

Journal of applied physics, 2018-07, Vol.124 (2)

2018

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Opening the Doors to Dynamic Camouflaging: Harnessing the Power of Polymorphic Devices

IEEE transactions on emerging topics in computing, 2022-01, Vol.10 (1), p.137-156

2022

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IEEE_Xplore

Observation and Modeling of Near-Bistable Dark-Mode Current-Voltage Characteristics in Semi-Insulating Gallium Arsenide With Implications for Photoconductors

IEEE journal of the Electron Devices Society, 2023, Vol.11, p.385-398

2023

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Extrinsic spin-orbit coupling and spin relaxation in phosphorene

Physical review. B, 2019-12, Vol.100 (24), p.1, Article 245429

2019

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SMART: A Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory

IEEE access, 2020, Vol.8, p.76130-76142

2020

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Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects

A unified static-dynamic analytic model for ultra-scaled III-nitride high electron mobility transistors

Evaluation of the Potential Performance of Graphene Nanoribbons as On-Chip Interconnects

Impact of strain on the SOT-driven dynamics of thin film Mn3Sn

Control-gate-free reconfigurable transistor based on 2D MoTe2 with asymmetric gating

Guest Editorial: Dimensional Scaling of Material Functional Properties to Meet Back-End-of-Line (BEOL) Challenges

Voltage controlled Néel vector rotation in zero magnetic field

Dispersion characteristics of THz surface plasmons in nonlinear graphene-based parallel-plate waveguide with Kerr-type core dielectric

A spin-based true random number generator exploiting the stochastic precessional switching of nanomagnets

Anisotropy-driven quantum capacitance in multi-layered black phosphorus

Voltage tunable plasmon propagation in dual gated bilayer graphene

Modeling and Evaluation of Echo-State Networks Using Spin Torque Nano-Oscillators

Spin-Orbit Torque Devices for Hardware Security: From Deterministic to Probabilistic Regime

Terahertz band communication using plasma wave propagation in multilayer graphene heterostructures

Order parameter dynamics in Mn3Sn driven by DC and pulsed spin–orbit torques

Temperature-resilient random number generation with stochastic actuated magnetic tunnel junction devices

Dynamics of magnetoelectric reversal of an antiferromagnetic domain

A virtual-source emission-diffusion I-V model for ultra-thin black phosphorus field-effect transistors

The Next Era in Hardware Security: A Perspective on Emerging Technologies for Secure Electronics

Design considerations for gallium arsenide pulse compression photoconductive switch

Analytic modeling of dipolar field requirements for robust coupling in a non-identical biaxial two-magnet system

Opening the Doors to Dynamic Camouflaging: Harnessing the Power of Polymorphic Devices

Observation and Modeling of Near-Bistable Dark-Mode Current-Voltage Characteristics in Semi-Insulating Gallium Arsenide With Implications for Photoconductors

Extrinsic spin-orbit coupling and spin relaxation in phosphorene

SMART: A Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory

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