UB Paderborn / Katalog / Suche / in CDI

The influence of AlN buffer layer on the growth of self-assembled GaN nanocolumns on graphene

Scientific reports, 2020-01, Vol.10 (1), p.853, Article 853

2020

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Current transport in nonpolar a-plane InN/GaN heterostructures Schottky junction

Journal of applied physics, 2012-07, Vol.112 (2)

2012

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Binary group III-nitride based heterostructures: band offsets and transport properties

Journal of physics. D, Applied physics, 2015-10, Vol.48 (42), p.423001

2015

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Transport and infrared photoresponse properties of InN nanorods/Si heterojunction

Nanoscale research letters, 2011-11, Vol.6 (1), p.609-609, Article 609

2011

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Analysis of the temperature-dependent current-voltage characteristics and the barrier-height inhomogeneities of Au/GaN Schottky diodes

Physica status solidi. A, Applications and materials science, 2012-08, Vol.209 (8), p.1575-1578

2012

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Growth temperature induced effects in non-polar a-plane GaN on r-plane sapphire substrate by RF-MBE

Journal of crystal growth, 2011, Vol.314 (1), p.5-8

2011

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Electrical transport studies of MBE grown InGaN/Si isotype heterojunctions

Current Applied Physics, 2013, 13(1), , pp.26-30

2013

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Sb-Induced Phase Control of InAsSb Nanowires Grown by Molecular Beam Epitaxy

Nano letters, 2015-02, Vol.15 (2), p.1109-1116

2015

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Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors

Scientific reports, 2017-04, Vol.7 (1), p.46110-46110, Article 46110

2017

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Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films

Applied physics letters, 2011-10, Vol.99 (16), p.162512-162512-3

2011

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Band gap temperature-dependence and exciton-like state in copper antimony sulphide, CuSbS2

APL materials, 2018-08, Vol.6 (8), p.084904-084904-9

2018

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Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam epitaxy

Journal of applied physics, 2011-11, Vol.110 (9), p.093718-093718-6

2011

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Structural and optical properties of nonpolar (1 1 −2 0) a-plane GaN grown on (1 −1 0 2) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy

Scripta materialia, 2011-06, Vol.65 (1), p.33-36

2011

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Valence band offset at GaN/β-Si3N4 and β-Si3N4/Si(111) heterojunctions formed by plasma-assisted molecular beam epitaxy

Thin solid films, 2012-05, Vol.520 (15), p.4911-4915

2012

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Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy

Nanoscale research letters, 2014-06, Vol.9 (1), p.321-321, Article 321

2014

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Influence of GaN underlayer thickness on structural, electrical and optical properties of InN films grown by PAMBE

Journal of crystal growth, 2012-09, Vol.354 (1), p.208-211

2012

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Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes

Journal of applied physics, 2011-02, Vol.109 (4), p.44502-44502-5

2011

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Spectroscopic studies of In2O3 nanostructures; photovoltaic demonstration of In2O3/p-Si heterojunction

Journal of nanoscience and nanotechnology, 2013-01, Vol.13 (1), p.498

2013

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Barrier height inhomogeneities in InN/GaN heterostructure based Schottky junctions

Solid state communications, 2011-10, Vol.151 (20), p.1420-1423

2011

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Growth of InN layers on Si (111) using ultra thin silicon nitride buffer layer by NPA-MBE

Materials letters, 2011-05, Vol.65 (9), p.1396-1399

2011

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Carrier-transport studies of III-nitride/Si3N4/Si isotype heterojunctions

Physica status solidi. A, Applications and materials science, 2012-05, Vol.209 (5), p.994-997

2012

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Temperature dependent transport behavior of n -InN nanodot / p -Si heterojunction structures

Applied physics letters, 2010-11, Vol.97 (20), p.202107-202107-3

2010

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Size dependent bandgap of molecular beam epitaxy grown InN quantum dots measured by scanning tunneling spectroscopy

Journal of applied physics, 2011-12, Vol.110 (11), p.114317-114317-5

2011

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Indium flux, growth temperature and RF power induced effects in InN layers grown on GaN/Si substrate by plasma-assisted MBE

Journal of alloys and compounds, 2012-02, Vol.513, p.6-9

2012

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Negative differential capacitance in n-GaN/p-Si heterojunctions

Solid state communications, 2011-03, Vol.151 (5), p.356-359

2011

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The influence of AlN buffer layer on the growth of self-assembled GaN nanocolumns on graphene

Current transport in nonpolar a-plane InN/GaN heterostructures Schottky junction

Binary group III-nitride based heterostructures: band offsets and transport properties

Transport and infrared photoresponse properties of InN nanorods/Si heterojunction

Analysis of the temperature-dependent current-voltage characteristics and the barrier-height inhomogeneities of Au/GaN Schottky diodes

Growth temperature induced effects in non-polar a-plane GaN on r-plane sapphire substrate by RF-MBE

Electrical transport studies of MBE grown InGaN/Si isotype heterojunctions

Sb-Induced Phase Control of InAsSb Nanowires Grown by Molecular Beam Epitaxy

Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors

Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films

Band gap temperature-dependence and exciton-like state in copper antimony sulphide, CuSbS2

Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam epitaxy

Structural and optical properties of nonpolar (1 1 −2 0) a-plane GaN grown on (1 −1 0 2) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy

Valence band offset at GaN/β-Si3N4 and β-Si3N4/Si(111) heterojunctions formed by plasma-assisted molecular beam epitaxy

Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy

Influence of GaN underlayer thickness on structural, electrical and optical properties of InN films grown by PAMBE

Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes

Spectroscopic studies of In2O3 nanostructures; photovoltaic demonstration of In2O3/p-Si heterojunction

Barrier height inhomogeneities in InN/GaN heterostructure based Schottky junctions

Growth of InN layers on Si (111) using ultra thin silicon nitride buffer layer by NPA-MBE

Carrier-transport studies of III-nitride/Si3N4/Si isotype heterojunctions

Temperature dependent transport behavior of n -InN nanodot / p -Si heterojunction structures

Size dependent bandgap of molecular beam epitaxy grown InN quantum dots measured by scanning tunneling spectroscopy

Indium flux, growth temperature and RF power induced effects in InN layers grown on GaN/Si substrate by plasma-assisted MBE

Negative differential capacitance in n-GaN/p-Si heterojunctions

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