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Ion irradiation and defect formation in single layer graphene

Carbon (New York), 2009-11, Vol.47 (14), p.3201-3207

2009

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Richardson’s constant in inhomogeneous silicon carbide Schottky contacts

Journal of applied physics, 2003-06, Vol.93 (11), p.9137-9144

2003

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Influence of high-temperature GaN annealed surface on the electrical properties of Ni/GaN Schottky contacts

Journal of applied physics, 2008-11, Vol.104 (9), p.093706-093706-7

2008

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Temperature behavior of inhomogeneous Pt∕GaN Schottky contacts

Applied physics letters, 2007-02, Vol.90 (9)

2007

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Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures

Applied physics letters, 2012-02, Vol.100 (6), p.063511-063511-4

2012

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Toward an ideal Schottky barrier on 3C-SiC

Applied physics letters, 2009-08, Vol.95 (8)

2009

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Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)

Nanoscale research letters, 2011-03, Vol.6 (1), p.269-269, Article 269

2011

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Anchoring Molecular Magnets on the Si(100) Surface

Angewandte Chemie International Edition, 2004-08, Vol.43 (31), p.4081-4084

2004

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Lateral homogeneity of the electronic properties in pristine and ion-irradiated graphene probed by scanning capacitance spectroscopy

Nanoscale research letters, 2011-01, Vol.6 (1), p.109-109, Article 109

2011

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Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization

Nanoscale research letters, 2011-02, Vol.6 (1), p.132-132, Article 132

2011

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Ion beam induced defects in graphene: Raman spectroscopy and DFT calculations

Journal of molecular structure, 2011-05, Vol.993 (1), p.506-509

2011

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Nanoscale probing of dielectric breakdown at SiO2/3C-SiC interfaces

Journal of applied physics, 2011-01, Vol.109 (1)

2011

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Scanning Probe Microscopy on heterogeneous CaCu3Ti4O12 thin films

Nanoscale research letters, 2011-02, Vol.6 (1), p.118-118, Article 118

2011

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Scanning tip measurement for identification of point defects

Nanoscale research letters, 2011-02, Vol.6 (1), p.140-140, Article 140

2011

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Study of interface states and oxide quality to avoid contrast reversal in scanning capacitance microscopy

Applied physics letters, 2002-09, Vol.81 (10), p.1824-1826

2002

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Nanoscale characterization of electrical transport at metal/3C-SiC interfaces

Nanoscale research letters, 2011-02, Vol.6 (1), p.120-120, Article 120

2011

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Barrier inhomogeneity and electrical properties of Pt∕GaN Schottky contacts

Journal of applied physics, 2007-12, Vol.102 (11)

2007

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OHMIC CONTACTS TO SIC

International journal of high speed electronics, 2005-12, Vol.15 (4), p.781-820

2005

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Dielectric properties of Pr2O3 high-k films grown by metalorganic chemical vapor deposition on silicon

Applied physics letters, 2003-07, Vol.83 (1), p.129-131

2003

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On the “Step Bunching” Phenomena Observed on Etched and Homoepitaxially Grown 4H Silicon Carbide

Materials science forum, 2011-03, Vol.679-680, p.358-361

2011

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Mapping the Density of Scattering Centers Limiting the Electron Mean Free Path in Graphene

Nano letters, 2011-11, Vol.11 (11), p.4612-4618

2011

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Microscopic study of electrical properties of CrSi2 nanocrystals in silicon

Nanoscale research letters, 2011-03, Vol.6 (1), p.209-209, Article 209

2011

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Quantitative carrier profiling in ion-implanted 6H–SiC

Applied physics letters, 2001-08, Vol.79 (8), p.1211-1213

2001

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Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC

Nanoscale research letters, 2011-02, Vol.6 (1), p.158-158, Article 158

2011

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Reliability of thermally oxidized SiO2∕4H-SiC by conductive atomic force microscopy

Applied physics letters, 2006-05, Vol.88 (21)

2006

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Ion irradiation and defect formation in single layer graphene

Richardson’s constant in inhomogeneous silicon carbide Schottky contacts

Influence of high-temperature GaN annealed surface on the electrical properties of Ni/GaN Schottky contacts

Temperature behavior of inhomogeneous Pt∕GaN Schottky contacts

Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures

Toward an ideal Schottky barrier on 3C-SiC

Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)

Anchoring Molecular Magnets on the Si(100) Surface

Lateral homogeneity of the electronic properties in pristine and ion-irradiated graphene probed by scanning capacitance spectroscopy

Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization

Ion beam induced defects in graphene: Raman spectroscopy and DFT calculations

Nanoscale probing of dielectric breakdown at SiO2/3C-SiC interfaces

Scanning Probe Microscopy on heterogeneous CaCu3Ti4O12 thin films

Scanning tip measurement for identification of point defects

Study of interface states and oxide quality to avoid contrast reversal in scanning capacitance microscopy

Nanoscale characterization of electrical transport at metal/3C-SiC interfaces

Barrier inhomogeneity and electrical properties of Pt∕GaN Schottky contacts

OHMIC CONTACTS TO SIC

Dielectric properties of Pr2O3 high-k films grown by metalorganic chemical vapor deposition on silicon

On the “Step Bunching” Phenomena Observed on Etched and Homoepitaxially Grown 4H Silicon Carbide

Mapping the Density of Scattering Centers Limiting the Electron Mean Free Path in Graphene

Microscopic study of electrical properties of CrSi2 nanocrystals in silicon

Quantitative carrier profiling in ion-implanted 6H–SiC

Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC

Reliability of thermally oxidized SiO2∕4H-SiC by conductive atomic force microscopy

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