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Impact of the Radial Ionization Profile on SEE Prediction for SOI Transistors and SRAMs Beyond the 32-nm Technological Node

IEEE transactions on nuclear science, 2011-06, Vol.58 (3), p.840-847

2011

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Effect of the Ion Mass and Energy on the Response of 70-nm SOI Transistors to the Ion Deposited Charge by Direct Ionization

IEEE transactions on nuclear science, 2010-08, Vol.57 (4), p.1892-1899

2010

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Simulation of Single Particle Displacement Damage in Silicon-Part II: Generation and Long-Time Relaxation of Damage Structure

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.141-148

2017

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Simulation of Single Particle Displacement Damage in Si₁₋ₓGeₓ Alloys-Interaction of Primary Particles With the Material and Generation of the Damage Structure

IEEE transactions on nuclear science, 2020-07, Vol.67 (7), p.1273-1283

2020

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Neutron Displacement Damage Cross Section in GaN: Numerical Evaluations and Differences With Si

IEEE transactions on nuclear science, 2023-08, Vol.70 (8), p.1870-1877

2023

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Simulation of Single Particle Displacement Damage in Silicon - Part I: Global Approach and Primary Interaction Simulation

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.133-140

2017

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Total ionizing dose effects in multiple-gate field-effect transistor

Semiconductor science and technology, 2017-08, Vol.32 (8), p.83003

2017

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Towards a Generic Representation of Heavy Ion Tracks to be Used in Engineering SEE Simulation Tools

IEEE transactions on nuclear science, 2014-08, Vol.61 (4), p.1791-1798

2014

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Mirror-Assisted Radioluminescent Optical Fibers for X-Ray Beam Monitoring

IEEE transactions on nuclear science, 2023-04, Vol.70 (4), p.575-582

2023

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Monte-Carlo simulation and experimental study of the effect of internal charging on the electron emission yield of amorphous SiO$_2$ thin films

Journal of electron spectroscopy and related phenomena, 2022-10, Vol.261

2022

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Improved Simulation of Ion Track Structures Using New Geant4 Models-Impact on the Modeling of Advanced Technologies Response

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2697-2703

2012

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Experimental and Monte-Carlo study of double-hump electron emission yield curves of SiO 2 thin films

Journal of applied physics, 2023-04, Vol.133 (13)

2023

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Monte-Carlo simulation and analytical expressions for the extrapolated range and transmission rate of low energy electrons [10 eV–10 keV] in 11 monoatomic materials

Applied surface science, 2021-12, Vol.570, p.151154, Article 151154

2021

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Estimating the Single-Event Upset sensitivity of a memory array using simulation

Microelectronics and reliability, 2017-11, Vol.78, p.349-354

2017

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Investigations on the displacement damage dose effects induced by heavy ion irradiation in silicon PiN photodiodes: Implications for modeling and simulation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2019-12, Vol.460, p.52-55

2019

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Pixel pitch and particle energy influence on the dark current distribution of neutron irradiated CMOS image sensors

Optics express, 2016-02, Vol.24 (4), p.4299-4315

2016

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Geant4 physics processes for microdosimetry and secondary electron emission simulation: Extension of MicroElec to very low energies and 11 materials (C, Al, Si, Ti, Ni, Cu, Ge, Ag, W, Kapton and SiO2)

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2021-01, Vol.487, p.66-77

2021

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Dark Current Spectroscopy on Alpha Irradiated Pinned Photodiode CMOS Image Sensors

IEEE transactions on nuclear science, 2016-08, Vol.63 (4), p.2183-2192

2016

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Implementing Realistic Heavy Ion Tracks in a SEE Prediction Tool: Comparison Between Different Approaches

IEEE transactions on nuclear science, 2012-08, Vol.59 (4), p.950-957

2012

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Surface ionizing dose deposited by low energy electrons (10 eV–10 keV) in eleven monoatomic materials: Monte Carlo calculations and analytical expressions

Applied surface science, 2022-02, Vol.576, p.151813, Article 151813

2022

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Analysis of Nanowire Field-Effect Transistors SET Response: Geometrical Considerations

IEEE transactions on nuclear science, 2019-07, Vol.66 (7), p.1410-1417

2019

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Monte Carlo Prediction of Heavy Ion Induced MBU Sensitivity for SOI SRAMs Using Radial Ionization Profile

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2607-2613

2011

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Simulation of Single-Particle Displacement Damage in Silicon—Part III: First Principle Characterization of Defect Properties

IEEE transactions on nuclear science, 2018-02, Vol.65 (2), p.724-731

2018

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Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node

IEEE transactions on nuclear science, 2013-08, Vol.60 (4), p.2583-2589

2013

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Exploring the Kinetics of Formation and Annealing of Single Particle Displacement Damage in Microvolumes of Silicon

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.2826-2833

2014

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Impact of the Radial Ionization Profile on SEE Prediction for SOI Transistors and SRAMs Beyond the 32-nm Technological Node

Effect of the Ion Mass and Energy on the Response of 70-nm SOI Transistors to the Ion Deposited Charge by Direct Ionization

Simulation of Single Particle Displacement Damage in Silicon-Part II: Generation and Long-Time Relaxation of Damage Structure

Simulation of Single Particle Displacement Damage in Si₁₋ₓGeₓ Alloys-Interaction of Primary Particles With the Material and Generation of the Damage Structure

Neutron Displacement Damage Cross Section in GaN: Numerical Evaluations and Differences With Si

Simulation of Single Particle Displacement Damage in Silicon - Part I: Global Approach and Primary Interaction Simulation

Total ionizing dose effects in multiple-gate field-effect transistor

Towards a Generic Representation of Heavy Ion Tracks to be Used in Engineering SEE Simulation Tools

Mirror-Assisted Radioluminescent Optical Fibers for X-Ray Beam Monitoring

Monte-Carlo simulation and experimental study of the effect of internal charging on the electron emission yield of amorphous SiO$_2$ thin films

Improved Simulation of Ion Track Structures Using New Geant4 Models-Impact on the Modeling of Advanced Technologies Response

Experimental and Monte-Carlo study of double-hump electron emission yield curves of SiO 2 thin films

Monte-Carlo simulation and analytical expressions for the extrapolated range and transmission rate of low energy electrons [10 eV–10 keV] in 11 monoatomic materials

Estimating the Single-Event Upset sensitivity of a memory array using simulation

Investigations on the displacement damage dose effects induced by heavy ion irradiation in silicon PiN photodiodes: Implications for modeling and simulation

Pixel pitch and particle energy influence on the dark current distribution of neutron irradiated CMOS image sensors

Geant4 physics processes for microdosimetry and secondary electron emission simulation: Extension of MicroElec to very low energies and 11 materials (C, Al, Si, Ti, Ni, Cu, Ge, Ag, W, Kapton and SiO2)

Dark Current Spectroscopy on Alpha Irradiated Pinned Photodiode CMOS Image Sensors

Implementing Realistic Heavy Ion Tracks in a SEE Prediction Tool: Comparison Between Different Approaches

Surface ionizing dose deposited by low energy electrons (10 eV–10 keV) in eleven monoatomic materials: Monte Carlo calculations and analytical expressions

Analysis of Nanowire Field-Effect Transistors SET Response: Geometrical Considerations

Monte Carlo Prediction of Heavy Ion Induced MBU Sensitivity for SOI SRAMs Using Radial Ionization Profile

Simulation of Single-Particle Displacement Damage in Silicon—Part III: First Principle Characterization of Defect Properties

Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node

Exploring the Kinetics of Formation and Annealing of Single Particle Displacement Damage in Microvolumes of Silicon

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