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Role of transmission electron microscopy in the semiconductor industry for process development and failure analysis

Progress in crystal growth and characterization of materials, 2009-09, Vol.55 (3), p.63-97

2009

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Ferroelectric Domain Structure of Lanthanum-Modified Lead Titanate Ceramics

Journal of the American Ceramic Society, 1990-03, Vol.73 (3), p.615-620

1990

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Effect of lead acetate in the preparation of the Lindlar catalyst

Journal of organic chemistry, 1987-07, Vol.52 (14), p.3126-3132

1987

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Thermodynamic stability of high- K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2

Applied physics letters, 2002-03, Vol.80 (11), p.1897-1899

2002

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Fermi-level pinning at the polysilicon/metal oxide interface-Part I

IEEE transactions on electron devices, 2004-06, Vol.51 (6), p.971-977

2004

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Surface and Interface Roughness of Ultrathin Nitric Oxide Oxynitride Gate Dielectric

Journal of the Electrochemical Society, 1998-01, Vol.145 (1), p.L13-L15

1998

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Fermi-level pinning at the polysilicon/metal-oxide interface-Part II

IEEE transactions on electron devices, 2004-06, Vol.51 (6), p.978-984

2004

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Low Temperature Reactive Flux Growth of SiC and SiC-AlNusing Al-Si Flux

Current Research in Materials Chemistry, 2021, Vol.3 (1)

2021

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Metamorphosis of palladium and its relation to selectivity in the Rosenmund reaction

Journal of the American Chemical Society, 1986-05, Vol.108 (10), p.2608-2616

1986

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Theoretical and Experimental Investigation of Thermal Stability of HfO 2 /Si and HfO 2 /SiO 2 Interfaces

MRS proceedings, 2002, Vol.731, Article W5.2

2002

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Thermodynamic Stability of High-K Dielectric Metal Oxides ZrO2 and HfO2 in Contact with Si and SiO2

MRS proceedings, 2002, Vol.716

2002

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Specific site cross-sectional sample preparation using focused ion beam for transmission electron microscopy

Progress in crystal growth and characterization of materials, 1998, Vol.36 (1), p.99-122

1998

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Crystallization Behavior of a Glass in the Y2O3-SiO2-AlN System

Journal of the American Ceramic Society, 1988-04, Vol.71 (4), p.236-244

1988

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Thermodynamic Stability of High-K Dielectric Metal Oxides ZrO 2 and HfO 2 in Contact with Si and SiO2

MRS proceedings, 2002, Vol.716, Article B3.2

2002

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Theoretical and Experimental Investigation of Thermal Stability of HfO2/Si and HfO2/SiO2 Interfaces

MRS proceedings, 2002, Vol.731

2002

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Characterizing III–V heteroepitaxial structures

JOM (1989), 1994-09, Vol.46 (9), p.50-54

1994

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Crystallization Behavior of a Glass in the Y 2 O 3 ‐SiO 2 ‐AlN System

Journal of the American Ceramic Society, 1988-04, Vol.71 (4), p.236-244

1988

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Crystallization behavior of a glass in the Y sub 2 O sub 3 -SiO sub 2 -AlN system

Journal of the American Ceramic Society, 1988-04, Vol.71 (4), p.236-244

1988

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Crystallization behavior of a glass in the Y2O3-SiO2-AIN system

Journal of the American Ceramic Society, 1988, Vol.71 (4), p.236-244

1988

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Lattice imaging studies on structure and disorder in SiC polytypes

Bulletin de minéralogie, 1986, Vol.109 (5), p.509-527

1986

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Advanced industrial S/TEM automation and metrology: Boundary of precision

2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 2018, p.131-135

2018

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Beware of Artifacts When Characterizing Nanometer Device Features Smaller than a TEM Lamella Thickness in Semiconductor Wafer-foundries

Microscopy and microanalysis, 2014-08, Vol.20 (S3), p.1000-1001

2014

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Hole mobility enhancement and Si cap optimization in nanoscale strained Si1−xGex PMOSFETs

Solid-state electronics, 2004-12, Vol.48 (12), p.2299-2306

2004

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Atomic layer deposition of HfO2 thin films and nanolayered HfO2-Al2O3-Nb2O5 dielectrics

Journal of materials science. Materials in electronics, 2003-05, Vol.14 (5-7), p.361-367

2003

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Atomic layer deposition of HfO[2 thin films and nanolayered HfO[2-Al[2O[3-Nb[2O[5 dielectrics

Journal of materials science. Materials in electronics, 2003-05, Vol.10 (5/6/7), p.361-367.

2003

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Role of transmission electron microscopy in the semiconductor industry for process development and failure analysis

Ferroelectric Domain Structure of Lanthanum-Modified Lead Titanate Ceramics

Effect of lead acetate in the preparation of the Lindlar catalyst

Thermodynamic stability of high- K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2

Fermi-level pinning at the polysilicon/metal oxide interface-Part I

Surface and Interface Roughness of Ultrathin Nitric Oxide Oxynitride Gate Dielectric

Fermi-level pinning at the polysilicon/metal-oxide interface-Part II

Low Temperature Reactive Flux Growth of SiC and SiC-AlNusing Al-Si Flux

Metamorphosis of palladium and its relation to selectivity in the Rosenmund reaction

Theoretical and Experimental Investigation of Thermal Stability of HfO 2 /Si and HfO 2 /SiO 2 Interfaces

Thermodynamic Stability of High-K Dielectric Metal Oxides ZrO2 and HfO2 in Contact with Si and SiO2

Specific site cross-sectional sample preparation using focused ion beam for transmission electron microscopy

Crystallization Behavior of a Glass in the Y2O3-SiO2-AlN System

Thermodynamic Stability of High-K Dielectric Metal Oxides ZrO 2 and HfO 2 in Contact with Si and SiO2

Theoretical and Experimental Investigation of Thermal Stability of HfO2/Si and HfO2/SiO2 Interfaces

Characterizing III–V heteroepitaxial structures

Crystallization Behavior of a Glass in the Y 2 O 3 ‐SiO 2 ‐AlN System

Crystallization behavior of a glass in the Y sub 2 O sub 3 -SiO sub 2 -AlN system

Crystallization behavior of a glass in the Y2O3-SiO2-AIN system

Lattice imaging studies on structure and disorder in SiC polytypes

Advanced industrial S/TEM automation and metrology: Boundary of precision

Beware of Artifacts When Characterizing Nanometer Device Features Smaller than a TEM Lamella Thickness in Semiconductor Wafer-foundries

Hole mobility enhancement and Si cap optimization in nanoscale strained Si1−xGex PMOSFETs

Atomic layer deposition of HfO2 thin films and nanolayered HfO2-Al2O3-Nb2O5 dielectrics

Atomic layer deposition of HfO[2 thin films and nanolayered HfO[2-Al[2O[3-Nb[2O[5 dielectrics

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