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The Mechanism of Ni-Assisted GaN Nanowire Growth

Nano letters, 2016-12, Vol.16 (12), p.7632-7638

2016

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Fabrication and characterization of GaN nanowire doubly clamped resonators

Journal of applied physics, 2015-09, Vol.118 (11)

2015

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Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3157-3165

2013

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Laser induced structural phase transitions in Cu3SbS4 thin films

Semiconductor science and technology, 2019-09, Vol.34 (10)

2019

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Temperature-dependence of Cl2/Ar ICP-RIE of polar, semipolar, and nonpolar GaN and AlN following BCl3/Ar breakthrough plasma

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-01, Vol.38 (1)

2020

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Growth of high-quality GaN on (1 0 0) Ga2O3 substrates by facet-controlled MOVPE

Journal of crystal growth, 2019-10, Vol.524, p.125165, Article 125165

2019

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Large-area, thermally-sulfurized WS2 thin films: control of growth direction and use as a substrate for GaN epitaxy

Semiconductor science and technology, 2020-03, Vol.35 (3)

2020

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Facile synthesis of WS2 nanotubes by sulfurization of tungsten thin films: formation mechanism, and structural and optical properties

Nanoscale, 2018-09, Vol.10 (35), p.16683-16691

2018

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Influence of Nucleation Layers on MOVPE Growth of Semipolar (112¯2) GaN on m-Plane Sapphire

Journal of electronic materials, 2021-08, Vol.50 (8), p.4533-4539

2021

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Facile synthesis of WS 2 nanotubes by sulfurization of tungsten thin films: formation mechanism, and structural and optical properties

Nanoscale, 2018-09, Vol.10 (35), p.16683-16691

2018

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ICP-RIE etching of polar, semi-polar and non-polar AlN: comparison of Cl2 Ar and Cl2 BCl3 Ar plasma chemistry and surface pretreatment

Semiconductor science and technology, 2015-01, Vol.30 (1)

2015

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Abrasive Free Chemical Mechanical Planarization of Semi-Polar (11–22) GaN: Effect on Structural and Surface Properties and Subsequent Homoepitaxial Growth

ECS journal of solid state science and technology, 2018, Vol.7 (4), p.P152-P157

2018

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Inductively coupled plasma–reactive ion etching of c- and a-plane AlGaN over the entire Al composition range: Effect of BCl3 pretreatment in Cl2/Ar plasma chemistry

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2013-11, Vol.31 (6)

2013

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Synthesis of Cu3SbS4, Cu3SbSe4 and CuSbTe2 thin films via chalcogenation of sputtered Cu-Sb metal precursors

Thin solid films, 2022-07, Vol.754, p.139315, Article 139315

2022

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Computational Statistical Methodologies and Modelling for Artificial Intelligence

1, 2023

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Child support grant expansion and cognitive function among women in rural South Africa: Findings from a natural experiment in the HAALSI cohort

PloS one, 2024-03, Vol.19 (3), p.e0297673-e0297673

2024

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Chitin and Collagen: Isolation, Purification, Characterization, and Applications

Rahman, Azizur

2024

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Direct MOVPE growth of semipolar (112¯2) AlxGa1−xN across the alloy composition range

Journal of crystal growth, 2016-03, Vol.437, p.1-5

2016

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Proceedings of International Conference on Intelligent Cyber-Physical Systems: Icps 2021

1, 2022

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Large-area, thermally-sulfurized WS 2 thin films: control of growth direction and use as a substrate for GaN epitaxy

Semiconductor science and technology, 2020-03, Vol.35 (3), p.35011

2020

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Laser induced structural phase transitions in Cu 3 SbS 4 thin films

Semiconductor science and technology, 2019-10, Vol.34 (10), p.105026

2019

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Direct MOVPE growth of semipolar ( 11 2 ¯ 2 ) Al Ga1−N across the alloy composition range

Journal of crystal growth, 2016-03, Vol.437, p.1-5

2016

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Facile synthesis of WS2 nanotubes by sulfurization of tungsten thin films: formation mechanism, and structural and optical propertiesElectronic supplementary information (ESI) available. See DOI: 10.1039/C8NR03138J

2018-09

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MOVPE growth of semipolar (112¯2) Al1−xInxN across the alloy composition range (0≤x≤0.55)

Journal of crystal growth, 2015-02, Vol.411, p.106-109

2015

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Marine Skeletal Biopolymers and Proteins, and Their Biomedical Application

Rahman, Azizur

2021

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The Mechanism of Ni-Assisted GaN Nanowire Growth

Fabrication and characterization of GaN nanowire doubly clamped resonators

Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling

Laser induced structural phase transitions in Cu3SbS4 thin films

Temperature-dependence of Cl2/Ar ICP-RIE of polar, semipolar, and nonpolar GaN and AlN following BCl3/Ar breakthrough plasma

Growth of high-quality GaN on (1 0 0) Ga2O3 substrates by facet-controlled MOVPE

Large-area, thermally-sulfurized WS2 thin films: control of growth direction and use as a substrate for GaN epitaxy

Facile synthesis of WS2 nanotubes by sulfurization of tungsten thin films: formation mechanism, and structural and optical properties

Influence of Nucleation Layers on MOVPE Growth of Semipolar (112¯2) GaN on m-Plane Sapphire

Facile synthesis of WS 2 nanotubes by sulfurization of tungsten thin films: formation mechanism, and structural and optical properties

ICP-RIE etching of polar, semi-polar and non-polar AlN: comparison of Cl2 Ar and Cl2 BCl3 Ar plasma chemistry and surface pretreatment

Abrasive Free Chemical Mechanical Planarization of Semi-Polar (11–22) GaN: Effect on Structural and Surface Properties and Subsequent Homoepitaxial Growth

Inductively coupled plasma–reactive ion etching of c- and a-plane AlGaN over the entire Al composition range: Effect of BCl3 pretreatment in Cl2/Ar plasma chemistry

Synthesis of Cu3SbS4, Cu3SbSe4 and CuSbTe2 thin films via chalcogenation of sputtered Cu-Sb metal precursors

Computational Statistical Methodologies and Modelling for Artificial Intelligence

Child support grant expansion and cognitive function among women in rural South Africa: Findings from a natural experiment in the HAALSI cohort

Chitin and Collagen: Isolation, Purification, Characterization, and Applications

Direct MOVPE growth of semipolar (112¯2) AlxGa1−xN across the alloy composition range

Proceedings of International Conference on Intelligent Cyber-Physical Systems: Icps 2021

Large-area, thermally-sulfurized WS 2 thin films: control of growth direction and use as a substrate for GaN epitaxy

Laser induced structural phase transitions in Cu 3 SbS 4 thin films

Direct MOVPE growth of semipolar ( 11 2 ¯ 2 ) Al Ga1−N across the alloy composition range

Facile synthesis of WS2 nanotubes by sulfurization of tungsten thin films: formation mechanism, and structural and optical propertiesElectronic supplementary information (ESI) available. See DOI: 10.1039/C8NR03138J

MOVPE growth of semipolar (112¯2) Al1−xInxN across the alloy composition range (0≤x≤0.55)

Marine Skeletal Biopolymers and Proteins, and Their Biomedical Application

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