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X-ray Topography Characterization of GaN Substrates Used for Power Electronic Devices

Journal of electronic materials, 2021-06, Vol.50 (6), p.2981-2989

2021

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Relationship Between Basal Plane Dislocation Distribution and Local Basal Plane Bending in PVT-Grown 4H-SiC Crystals

Journal of electronic materials, 2020-06, Vol.49 (6), p.3455-3464

2020

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Ray Tracing Simulation of Images of Dislocations and Inclusions on X-Ray Topographs of GaAs Epitaxial Wafers

Journal of electronic materials, 2020-06, Vol.49 (6), p.3472-3480

2020

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Strain mapping of GaN substrates and epitaxial layers used for power electronic devices by synchrotron X-ray rocking curve topography

Journal of crystal growth, 2022-04, Vol.583 (C), p.126559, Article 126559

2022

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Mapping of Lattice Strain in 4H-SiC Crystals by Synchrotron Double-Crystal X-ray Topography

Journal of electronic materials, 2018-02, Vol.47 (2), p.903-909

2018

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Synchrotron X-ray topographic image contrast variation of screw-type basal plane dislocations located at different depths below the crystal surface in 4H-SiC

Acta materialia, 2021-04, Vol.208, p.116746, Article 116746

2021

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Characterization of Hazy Morphology on AlInP/GaAs Epitaxial Wafers Grown by Organometallic Vapor-Phase Epitaxy

Journal of electronic materials, 2021-06, Vol.50 (6), p.3006-3012

2021

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Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals

Journal of electronic materials, 2021-06, Vol.50 (6), p.3258-3265

2021

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Epitaxy of Boron Phosphide on Aluminum Nitride(0001)/Sapphire Substrate

Crystal growth & design, 2016-02, Vol.16 (2), p.981-987

2016

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Characterization of Dislocations in 6H-SiC Wafer Through X-Ray Topography and Ray-Tracing Simulations

Journal of electronic materials, 2021-07, Vol.50 (7), p.4104-4117

2021

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X-ray topography characterization of gallium nitride substrates for power device development

Journal of crystal growth, 2020-08, Vol.544 (C), p.125709, Article 125709

2020

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Synchrotron X-ray topography characterization of high quality ammonothermal-grown gallium nitride substrates

Journal of crystal growth, 2020-12, Vol.551, p.125903, Article 125903

2020

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Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate Wafers

Materials science forum, 2020-07, Vol.1004, p.393-400

2020

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High Quality AlN Single Crystal Substrates for AlGaN-Based Devices

Materials science forum, 2018-06, Vol.924, p.923-926

2018

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Prismatic Slip in PVT-Grown 4H-SiC Crystals

Journal of electronic materials, 2017-04, Vol.46 (4), p.2040-2044

2017

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Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers

Journal of crystal growth, 2016-10, Vol.452, p.35-38

2016

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Characterization of Threading Dislocations in PVT-Grown AlN Substrates via x-Ray Topography and Ray Tracing Simulation

Journal of electronic materials, 2014-04, Vol.43 (4), p.838-842

2014

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Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H–SiC crystals grown by PVT method

Journal of crystal growth, 2016-10, Vol.452 (C), p.39-43

2016

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Low Defect Density Bulk AlN Substrates for High Performance Electronics and Optoelectronics

Materials science forum, 2012-05, Vol.717-720, p.1287-1290

2012

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A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images

Journal of applied physics, 2014-09, Vol.116 (10)

2014

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Projection x-ray topography system at 1-BM x-ray optics test beamline at the advanced photon source

AIP conference proceedings, 2016-07, Vol.1741 (1)

2016

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Synchrotron X-Ray Topography Analysis of Double Shockley Stacking Faults in 4H-SiC Wafers

Materials Science Forum, 2016-05, Vol.858 (5, 2016), p.105-108, Article 105

2016

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Erratum: “A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images” [J. Appl. Phys. 116 , 104905 (2014)]

Journal of applied physics, 2014-10, Vol.116 (16)

2014

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Defect analysis in crystals using X-ray topography

Microscopy research and technique, 2006-05, Vol.69 (5), p.343-358

2006

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Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers

Journal of electronic materials, 2015-05, Vol.44 (5), p.1293-1299

2015

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X-ray Topography Characterization of GaN Substrates Used for Power Electronic Devices

Relationship Between Basal Plane Dislocation Distribution and Local Basal Plane Bending in PVT-Grown 4H-SiC Crystals

Ray Tracing Simulation of Images of Dislocations and Inclusions on X-Ray Topographs of GaAs Epitaxial Wafers

Strain mapping of GaN substrates and epitaxial layers used for power electronic devices by synchrotron X-ray rocking curve topography

Mapping of Lattice Strain in 4H-SiC Crystals by Synchrotron Double-Crystal X-ray Topography

Synchrotron X-ray topographic image contrast variation of screw-type basal plane dislocations located at different depths below the crystal surface in 4H-SiC

Characterization of Hazy Morphology on AlInP/GaAs Epitaxial Wafers Grown by Organometallic Vapor-Phase Epitaxy

Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals

Epitaxy of Boron Phosphide on Aluminum Nitride(0001)/Sapphire Substrate

Characterization of Dislocations in 6H-SiC Wafer Through X-Ray Topography and Ray-Tracing Simulations

X-ray topography characterization of gallium nitride substrates for power device development

Synchrotron X-ray topography characterization of high quality ammonothermal-grown gallium nitride substrates

Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate Wafers

High Quality AlN Single Crystal Substrates for AlGaN-Based Devices

Prismatic Slip in PVT-Grown 4H-SiC Crystals

Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers

Characterization of Threading Dislocations in PVT-Grown AlN Substrates via x-Ray Topography and Ray Tracing Simulation

Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H–SiC crystals grown by PVT method

Low Defect Density Bulk AlN Substrates for High Performance Electronics and Optoelectronics

A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images

Projection x-ray topography system at 1-BM x-ray optics test beamline at the advanced photon source

Synchrotron X-Ray Topography Analysis of Double Shockley Stacking Faults in 4H-SiC Wafers

Erratum: “A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images” [J. Appl. Phys. 116 , 104905 (2014)]

Defect analysis in crystals using X-ray topography

Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers

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