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Germline transformation of the malaria vector, Anopheles gambiae, with the piggyBac transposable element

Insect molecular biology, 2001-12, Vol.10 (6), p.597-604

2001

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Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

Journal of applied physics, 1997-05, Vol.81 (9), p.6031-6050

1997

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B cluster formation and dissolution in Si: A scenario based on atomistic modeling

Applied physics letters, 1999-06, Vol.74 (24), p.3657-3659

1999

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B diffusion and clustering in ion implanted Si: The role of B cluster precursors

Applied physics letters, 1997-04, Vol.70 (17), p.2285-2287

1997

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Simulation of cluster evaporation and transient enhanced diffusion in silicon

Applied physics letters, 1996-04, Vol.68 (17), p.2395-2397

1996

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Activation and deactivation of implanted B in Si

Applied physics letters, 1999-08, Vol.75 (5), p.662-664

1999

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Field study of wind and traffic to test a street canyon pollution model

Environmental monitoring and assessment, 2000-02, Vol.60 (3), p.283-313

2000

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The role of the surface in transient enhanced diffusion

Applied physics letters, 1995-10, Vol.67 (16), p.2302-2304

1995

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Oxidation enhanced diffusion in Si B-doping superlattices and Si self-interstitial diffusivities

Applied physics letters, 1993-08, Vol.63 (5), p.639-641

1993

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Stable transformation of the yellow fever mosquito, Aedes aegypti, with the Hermes element from the housefly

Proceedings of the National Academy of Sciences - PNAS, 1998-03, Vol.95 (7), p.3743-3747

1998

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Binding energy of vacancies to clusters formed in Si by high-energy ion implantation

Applied physics letters, 2001-09, Vol.79 (13), p.1983-1985

2001

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Diffusion parameters of indium for silicon process modeling

Journal of applied physics, 1996-11, Vol.80 (9), p.4944-4947

1996

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Front-end process simulation

Solid-state electronics, 2000-05, Vol.44 (5), p.863-868

Rafferty, C.S

2000

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Effects of oxide interface traps and transient enhanced diffusion on the process modeling of PMOS devices

IEEE transactions on electron devices, 1996-07, Vol.43 (7), p.1144-1152

1996

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Influence of fluorine implant on boron diffusion: Determination of process modeling parameters

Journal of applied physics, 1995-04, Vol.77 (7), p.3056-3060

1995

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Device-level simulation of wave propagation along metal-insulator-semiconductor interconnects

IEEE transactions on microwave theory and techniques, 2002-04, Vol.50 (4), p.1127-1136

2002

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Plastic flow during thermal oxidation of silicon

Applied physics letters, 1989-04, Vol.54 (16), p.1516-1518

1989

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Enhanced low temperature electrical activation of B in Si

Applied physics letters, 2003-01, Vol.82 (2), p.215-217

2003

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Plastic analysis of cylinder oxidation

Applied physics letters, 1989-05, Vol.54 (18), p.1815-1817

1989

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Depth dependence of {311} defect dissolution

Applied physics letters, 2001-09, Vol.79 (10), p.1429-1431

2001

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Scaling the Si metal-oxide-semiconductor field-effect transistor into the 0.1-μm regime using vertical doping engineering

Applied physics letters, 1991-12, Vol.59 (25), p.3315-3317

1991

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The dose, energy, and time dependence of silicon self-implantation induced transient enhanced diffusion at 750 °C

Applied physics letters, 1996-09, Vol.69 (14), p.2113-2115

1996

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Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon

Applied physics letters, 2001-08, Vol.79 (9), p.1273-1275

2001

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Effect of implant damage on the gate oxide thickness

Solid-state electronics, 1999, Vol.43 (5), p.985-988

1999

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Active-gate thin-film transistor

IEEE electron device letters, 1993-08, Vol.14 (8), p.394-395, Article 394

1993

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Germline transformation of the malaria vector, Anopheles gambiae, with the piggyBac transposable element

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

B cluster formation and dissolution in Si: A scenario based on atomistic modeling

B diffusion and clustering in ion implanted Si: The role of B cluster precursors

Simulation of cluster evaporation and transient enhanced diffusion in silicon

Activation and deactivation of implanted B in Si

Field study of wind and traffic to test a street canyon pollution model

The role of the surface in transient enhanced diffusion

Oxidation enhanced diffusion in Si B-doping superlattices and Si self-interstitial diffusivities

Stable transformation of the yellow fever mosquito, Aedes aegypti, with the Hermes element from the housefly

Binding energy of vacancies to clusters formed in Si by high-energy ion implantation

Diffusion parameters of indium for silicon process modeling

Front-end process simulation

Effects of oxide interface traps and transient enhanced diffusion on the process modeling of PMOS devices

Influence of fluorine implant on boron diffusion: Determination of process modeling parameters

Device-level simulation of wave propagation along metal-insulator-semiconductor interconnects

Plastic flow during thermal oxidation of silicon

Enhanced low temperature electrical activation of B in Si

Plastic analysis of cylinder oxidation

Depth dependence of {311} defect dissolution

Scaling the Si metal-oxide-semiconductor field-effect transistor into the 0.1-μm regime using vertical doping engineering

The dose, energy, and time dependence of silicon self-implantation induced transient enhanced diffusion at 750 °C

Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon

Effect of implant damage on the gate oxide thickness

Active-gate thin-film transistor

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