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Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

Microelectronic engineering, 2018-02, Vol.187-188, p.66-77

2018

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Current Transport Mechanisms in Au-Free Metallizations for CMOS Compatible GaN HEMT Technology

Materials science forum, 2020-07, Vol.1004, p.725-730

2020

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Atomic Layer Deposition of High-k Insulators on Epitaxial Graphene: A Review

Applied sciences, 2020-04, Vol.10 (7), p.2440

2020

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Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures

Applied physics letters, 2012-10, Vol.101 (17)

2012

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Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC

AIP advances, 2016-07, Vol.6 (7)

2016

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Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures

Applied physics letters, 2012-02, Vol.100 (6), p.063511-063511-4

2012

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Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition

AIP advances, 2020-12, Vol.10 (12), p.125017-125017-7

2020

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Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures

Energies (Basel), 2019, Vol.12 (14), p.2655

2019

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Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition

Nanomaterials (Basel, Switzerland), 2021-12, Vol.11 (12), p.3316

2021

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Mapping the Density of Scattering Centers Limiting the Electron Mean Free Path in Graphene

Nano letters, 2011-11, Vol.11 (11), p.4612-4618

2011

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Challenges for energy efficient wide band gap semiconductor power devices

Physica status solidi. A, Applications and materials science, 2014-09, Vol.211 (9), p.2063-2071

2014

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Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers

Journal of crystal growth, 2020-06, Vol.539, p.125624, Article 125624

2020

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Advances in the fabrication of graphene transistors on flexible substrates

Beilstein journal of nanotechnology, 2017, Vol.8 (1), p.467-474

2017

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Physics and technology of gallium nitride materials for power electronics

La rivista del Nuovo cimento, 2018-12, Vol.41 (12), p.625-681

2018

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Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC)

Microelectronic engineering, 2024-01, Vol.283, p.112103, Article 112103

2024

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Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices

Materials, 2022-01, Vol.15 (3), p.830

2022

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Metal‐Organic Chemical Vapor Deposition (MOCVD) Synthesis of Heteroepitaxial Pr0.7Ca0.3MnO3 Films: Effects of Processing Conditions on Structural/Morphological and Functional Properties

ChemistryOpen (Weinheim), 2015-08, Vol.4 (4), p.523-532

2015

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Scanning Probe Microscopy on heterogeneous CaCu3Ti4O12 thin films

Nanoscale research letters, 2011-02, Vol.6 (1), p.118-118, Article 118

2011

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Influence of oxide substrates on monolayer graphene doping process by thermal treatments in oxygen

Carbon (New York), 2019-08, Vol.149, p.546-555

2019

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Substrate-Driven Atomic Layer Deposition of High-κ Dielectrics on 2D Materials

Applied sciences, 2021-11, Vol.11 (22), p.11052

2021

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Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology

Materials science forum, 2018-06, Vol.924, p.339-344, Article 339

2018

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Recent Advances in Seeded and Seed-Layer-Free Atomic Layer Deposition of High-K Dielectrics on Graphene for Electronics

C (Basel), 2019-09, Vol.5 (3), p.53

2019

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Nanotechnology for Electronic Materials and Devices

Nanomaterials (Basel, Switzerland), 2022-09, Vol.12 (19), p.3319

2022

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Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices

Materials, 2023-08, Vol.16 (16), p.5638

2023

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Determining oxide trapped charges in Al2O3 insulating films on recessed AlGaN/GaN heterostructures by gate capacitance transients measurements

Japanese Journal of Applied Physics, 2018-05, Vol.57 (5)

2018

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Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

Current Transport Mechanisms in Au-Free Metallizations for CMOS Compatible GaN HEMT Technology

Atomic Layer Deposition of High-k Insulators on Epitaxial Graphene: A Review

Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures

Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC

Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures

Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition

Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures

Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition

Mapping the Density of Scattering Centers Limiting the Electron Mean Free Path in Graphene

Challenges for energy efficient wide band gap semiconductor power devices

Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers

Advances in the fabrication of graphene transistors on flexible substrates

Physics and technology of gallium nitride materials for power electronics

Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC)

Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices

Metal‐Organic Chemical Vapor Deposition (MOCVD) Synthesis of Heteroepitaxial Pr0.7Ca0.3MnO3 Films: Effects of Processing Conditions on Structural/Morphological and Functional Properties

Scanning Probe Microscopy on heterogeneous CaCu3Ti4O12 thin films

Influence of oxide substrates on monolayer graphene doping process by thermal treatments in oxygen

Substrate-Driven Atomic Layer Deposition of High-κ Dielectrics on 2D Materials

Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology

Recent Advances in Seeded and Seed-Layer-Free Atomic Layer Deposition of High-K Dielectrics on Graphene for Electronics

Nanotechnology for Electronic Materials and Devices

Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices

Determining oxide trapped charges in Al2O3 insulating films on recessed AlGaN/GaN heterostructures by gate capacitance transients measurements

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