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High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy

Nanoscale, 2015-05, Vol.7 (17), p.7896-7905

2015

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Magnonic band structure in CoFeB/Ta/NiFe meander-shaped magnetic bilayers

Applied physics letters, 2021-04, Vol.118 (16)

2021

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Non-volatile spin wave majority gate at the nanoscale

AIP advances, 2017-05, Vol.7 (5), p.056020-056020-6

2017

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Back hopping in spin transfer torque switching of perpendicularly magnetized tunnel junctions

Physical review. B, 2020-11, Vol.102 (18), p.1, Article 184406

2020

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The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance

Journal of applied physics, 2012-12, Vol.112 (12)

2012

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All electrical propagating spin wave spectroscopy with broadband wavevector capability

Applied physics letters, 2016-07, Vol.109 (1)

2016

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Low charge noise quantum dots with industrial CMOS manufacturing

npj quantum information, 2024-07, Vol.10 (1), p.70-9, Article 70

2024

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Low dephasing and robust micromagnet designs for silicon spin qubits

Applied physics letters, 2021-08, Vol.119 (9)

2021

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Linking Room- and Low-Temperature Electrical Performance of MOS Gate Stacks for Cryogenic Applications

IEEE electron device letters, 2022-05, Vol.43 (5), p.674-677

2022

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Dynamical influence of vortex–antivortex pairs in magnetic vortex oscillators

Journal of magnetism and magnetic materials, 2015-11, Vol.394, p.292-298

2015

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Strain coupling optimization in magnetoelectric transducers

Microelectronic engineering, 2018-02, Vol.187-188, p.144-147

2018

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Low-loss α-tantalum coplanar waveguide resonators on silicon wafers: fabrication, characterization and surface modification

Materials for quantum technology, 2024-06, Vol.4 (2), p.25801

2024

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Introducing 2D-FETs in Device Scaling Roadmap using DTCO

2020 IEEE International Electron Devices Meeting (IEDM), 2020, p.22.5.1-22.5.4

2020

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Circuit Model for the Efficient Co-Simulation of Spin Qubits and their Control & Readout Circuitry

ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC), 2021, p.63-66

2021

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Circuit Model for the Efficient Co-Simulation of Spin Qubits and their Control & Readout Circuitry

ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), 2021, p.63-66

2021

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TCAD-Assisted MultiPhysics Modeling & Simulation for Accelerating Silicon Quantum Dot Qubit Design

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2020, p.253-256

2020

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Band alignment and effective work function of atomic-layer deposited VO2 and V2O5 films on SiO2 and Al2O3

Physica status solidi. C, 2015-01, Vol.12 (1-2), p.238-241

2015

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191P Evaluating sorafenib as second-line treatment for advanced hepatocellular carcinoma: SORA-2, an European retrospective multicenter study

Annals of oncology, 2024-06, Vol.35, p.S86-S86

2024

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Large-Scale 2D Spin-Based Quantum Processor with a Bi-Linear Architecture

2021 IEEE International Electron Devices Meeting (IEDM), 2021, p.27.5.1-27.5.4

2021

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Comprehensive 300 mm process for Silicon spin qubits with modular integration

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023, p.1-2

2023

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Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell

2013 IEEE International Electron Devices Meeting, 2013, p.10.2.1-10.2.4

2013

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WS2 transistors on 300 mm wafers with BEOL compatibility

2017 47th European Solid-State Device Research Conference (ESSDERC), 2017, p.212-215

2017

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High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxyElectronic supplementary information (ESI) available: crystal structure of MoSe2; large area STM images of 3 ML MoSe2/AlN; large area optical and SEM images of MoSe2 films on AlN; GPA lattice strain analysis map of 3 ML MoSe2 deposited on AlN; band diagram reconstruction of MoSe2/AlN and MoSe2/Bi2Se3/AlN; short-scale uniformity investigation of 1 ML MoSe2 on AlN(0001); stabil

2015-04

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High-quality, large-area MoSe 2 and MoSe 2 /Bi 2 Se 3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy

Nanoscale, 2015, Vol.7 (17), p.7896-7905

2015

Volltextzugriff (PDF)

Uniform Spin Qubit Devices with Tunable Coupling in an All-Silicon 300 mm Integrated Process

2021 Symposium on VLSI Technology, 2021, p.1-2

2021

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High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy

Magnonic band structure in CoFeB/Ta/NiFe meander-shaped magnetic bilayers

Non-volatile spin wave majority gate at the nanoscale

Back hopping in spin transfer torque switching of perpendicularly magnetized tunnel junctions

The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance

All electrical propagating spin wave spectroscopy with broadband wavevector capability

Low charge noise quantum dots with industrial CMOS manufacturing

Low dephasing and robust micromagnet designs for silicon spin qubits

Linking Room- and Low-Temperature Electrical Performance of MOS Gate Stacks for Cryogenic Applications

Dynamical influence of vortex–antivortex pairs in magnetic vortex oscillators

Strain coupling optimization in magnetoelectric transducers

Low-loss α-tantalum coplanar waveguide resonators on silicon wafers: fabrication, characterization and surface modification

Introducing 2D-FETs in Device Scaling Roadmap using DTCO

Circuit Model for the Efficient Co-Simulation of Spin Qubits and their Control & Readout Circuitry

Circuit Model for the Efficient Co-Simulation of Spin Qubits and their Control & Readout Circuitry

TCAD-Assisted MultiPhysics Modeling & Simulation for Accelerating Silicon Quantum Dot Qubit Design

Band alignment and effective work function of atomic-layer deposited VO2 and V2O5 films on SiO2 and Al2O3

191P Evaluating sorafenib as second-line treatment for advanced hepatocellular carcinoma: SORA-2, an European retrospective multicenter study

Large-Scale 2D Spin-Based Quantum Processor with a Bi-Linear Architecture

Comprehensive 300 mm process for Silicon spin qubits with modular integration

Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell

WS2 transistors on 300 mm wafers with BEOL compatibility

High-quality, large-area MoSe 2 and MoSe 2 /Bi 2 Se 3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy

Uniform Spin Qubit Devices with Tunable Coupling in an All-Silicon 300 mm Integrated Process

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