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Polarity-dependent dielectric breakdown-induced epitaxy (DBIE) in Si MOSFETs

IEEE electron device letters, 2002-09, Vol.23 (9), p.526-528

2002

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Fundamental narrow MOSFET gate dielectric breakdown behaviors and their impacts on device performance

IEEE transactions on electron devices, 2005-04, Vol.52 (4), p.473-483

2005

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Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM

Microelectronics and reliability, 2003-09, Vol.43 (9), p.1471-1476

2003

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TUTORIAL 02: Building in Reliability in Silicon Devices

2018 IEEE International Conference on Semiconductor Electronics (ICSE), 2018, p.A2-A2

Radhakrishnan, M.K.

2018

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ESD reliability challenges for RF/mixed signal design and processing

16th International Conference on VLSI Design, 2003. Proceedings, 2003, p.20-21

2003

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Electrical conduction in coevaporated antimony trisulphide films

Solid state communications, 1980-03, Vol.33 (9), p.987-989

1980

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Correction to "Polarity-dependent dielectric breakdown-induced epitaxy (DBIE) in Si MOSFETs"

IEEE electron device letters, 2002-11, Vol.23 (11), p.676-676

2002

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Building-in reliability and challenges in analysis in sub−100nm devices - An overview

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2009, p.150-152

Radhakrishnan, M.K.

2009

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Physical analysis of hard and soft breakdown failures in ultrathin gate oxides

Microelectronics and reliability, 2002-04, Vol.42 (4), p.565-571

2002

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Gate dielectric degradation mechanism associated with DBIE evolution

2004 IEEE International Reliability Physics Symposium. Proceedings, 2004, p.117-121

2004

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Polarity-dependent dielectric breakdown-induced epitaxy (dbie) in si mosfets

IEEE electron device letters, 2002-11, Vol.23 (11), p.676-676

2002

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Gate dielectric breakdown induced microstructural damages in MOSFETs

Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003, 2003, p.134-140

2003

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Die attach failures related to wafer back metal processing—an AES study

Microelectronics and reliability, 1997-03, Vol.37 (3), p.519-523

Radhakrishnan, M.K.

1997

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A new breakdown failure mechanism in HfO/sub 2/ gate dielectric

2004 IEEE International Reliability Physics Symposium. Proceedings, 2004, p.347-352

2004

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Structure of the breakdown spot during progressive breakdown of ultra-thin gate oxides

2004 IEEE International Reliability Physics Symposium. Proceedings, 2004, p.583-584

2004

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Device reliability and failure mechanisms related to gate dielectrics and interconnects

17th International Conference on VLSI Design. Proceedings, 2004, p.805-808

Radhakrishnan, M.K.

2004

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DBIE shape and hardness dependence on gate oxide breakdown location in MOSFET channel

2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual, 2003, p.584-585

2003

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Expanded Papers From the 2003 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

IEEE transactions on device and materials reliability, 2004-03, Vol.4 (1), p.4-4

2004

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Gate dielectric-breakdown-induced microstructural damage in MOSFETs

IEEE transactions on device and materials reliability, 2004-03, Vol.4 (1), p.38-45

2004

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Physical analysis of reliability degradation in sub-micron devices

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), 2001, p.39.1.1-39.1.4

2001

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Physical analysis of Ti-migration in 33 /spl Aring/ gate oxide breakdown

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320), 2002, p.210-215

2002

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Dielectric breakdown induced epitaxy in ultrathin gate oxide - a reliability concern

Digest. International Electron Devices Meeting, 2002, p.163-166

2002

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Physical failure analysis to distinguish EOS and ESD failures

Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614), 2002, p.65-69

2002

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Geometry dependence of gate oxide breakdown evolution [MOSFET]

Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743), 2004, p.57-60

2004

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Structural analysis of breakdown in ultrathin gate dielectrics using transmission electron microscopy

Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743), 2004, p.11-16

2004

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Polarity-dependent dielectric breakdown-induced epitaxy (DBIE) in Si MOSFETs

Fundamental narrow MOSFET gate dielectric breakdown behaviors and their impacts on device performance

Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM

TUTORIAL 02: Building in Reliability in Silicon Devices

ESD reliability challenges for RF/mixed signal design and processing

Electrical conduction in coevaporated antimony trisulphide films

Correction to "Polarity-dependent dielectric breakdown-induced epitaxy (DBIE) in Si MOSFETs"

Building-in reliability and challenges in analysis in sub−100nm devices - An overview

Physical analysis of hard and soft breakdown failures in ultrathin gate oxides

Gate dielectric degradation mechanism associated with DBIE evolution

Polarity-dependent dielectric breakdown-induced epitaxy (dbie) in si mosfets

Gate dielectric breakdown induced microstructural damages in MOSFETs

Die attach failures related to wafer back metal processing—an AES study

A new breakdown failure mechanism in HfO/sub 2/ gate dielectric

Structure of the breakdown spot during progressive breakdown of ultra-thin gate oxides

Device reliability and failure mechanisms related to gate dielectrics and interconnects

DBIE shape and hardness dependence on gate oxide breakdown location in MOSFET channel

Expanded Papers From the 2003 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

Gate dielectric-breakdown-induced microstructural damage in MOSFETs

Physical analysis of reliability degradation in sub-micron devices

Physical analysis of Ti-migration in 33 /spl Aring/ gate oxide breakdown

Dielectric breakdown induced epitaxy in ultrathin gate oxide - a reliability concern

Physical failure analysis to distinguish EOS and ESD failures

Geometry dependence of gate oxide breakdown evolution [MOSFET]

Structural analysis of breakdown in ultrathin gate dielectrics using transmission electron microscopy

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