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Impact of post-ion implantation annealing on Se-hyperdoped Ge

Applied physics letters, 2024-07, Vol.125 (4)

2024

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Tailoring Femtosecond‐Laser Processed Black Silicon for Reduced Carrier Recombination Combined with >95% Above‐Bandgap Absorption

Advanced photonics research, 2022-04, Vol.3 (4), p.n/a

2022

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Impact of Pulse Duration on the Properties of Laser Hyperdoped Black Silicon

Advanced photonics research, 2024-06, Vol.5 (6), p.n/a

2024

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Effects of different laser modified surface morphologies and post-texturing cleanings on c-Si solar cell performance

Renewable energy, 2020-01, Vol.145, p.2707-2714

2020

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Millisecond-Level Minority Carrier Lifetime in Femtosecond Laser-Textured Black Silicon

IEEE photonics technology letters, 2022-08, Vol.34 (16), p.870-873

2022

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Bridging the gap between surface physics and photonics

Reports on progress in physics, 2024-04, Vol.87 (4), p.44501

2024

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Optoelectronic properties of black silicon fabricated by femtosecond laser in ambient air: exploring a large parameter space

Optics letters, 2023-03, Vol.48 (5), p.1224-1227

2023

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Harnessing Carrier Multiplication in Silicon Solar Cells Using UV Photons

IEEE photonics technology letters, 2021-12, Vol.33 (24), p.1415-1418

2021

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Extended Infrared Absorption in Nanostructured Si Through Se Implantation and Flash Lamp Annealing

Physica status solidi. A, Applications and materials science, 2024-06

2024

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Effective Carrier Lifetime in Ultrashort Pulse Laser Hyperdoped Silicon: Sulfur Concentration Dependence and Practical Limitations

Physica status solidi. A, Applications and materials science, 2024-05

2024

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Perspectives on Black Silicon in Semiconductor Manufacturing: Experimental Comparison of Plasma Etching, MACE, and Fs-Laser Etching

IEEE transactions on semiconductor manufacturing, 2022-08, Vol.35 (3), p.504-510

2022

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Excellent Responsivity and Low Dark Current Obtained With Metal-Assisted Chemical Etched Si Photodiode

IEEE sensors journal, 2023-04, Vol.23 (7), p.6750-6756

2023

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Development of a selective wet-chemical etchant for precise 3D sculpting of silicon enabled by infrared non-linear laser modification

Optics and laser technology, 2024-09, Vol.176, p.111022, Article 111022

2024

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Boron-Implanted Black Silicon Photodiode with Close-to-Ideal Responsivity from 200 to 1000 nm

ACS photonics, 2023-06, Vol.10 (6), p.1735-1741

2023

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Effect of laser parameters and post-texturing treatments on the optical and electrical properties of laser textured c-Si wafers

AIP conference proceedings, 2018, Vol.1999 (1)

2018

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Data set for paper 'Impact of post ion implantation annealing on Se-hyperdoped Ge'

2024

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Impact of post-ion implantation annealing on Se-hyperdoped Ge

Tailoring Femtosecond‐Laser Processed Black Silicon for Reduced Carrier Recombination Combined with >95% Above‐Bandgap Absorption

Impact of Pulse Duration on the Properties of Laser Hyperdoped Black Silicon

Effects of different laser modified surface morphologies and post-texturing cleanings on c-Si solar cell performance

Millisecond-Level Minority Carrier Lifetime in Femtosecond Laser-Textured Black Silicon

Bridging the gap between surface physics and photonics

Optoelectronic properties of black silicon fabricated by femtosecond laser in ambient air: exploring a large parameter space

Harnessing Carrier Multiplication in Silicon Solar Cells Using UV Photons

Extended Infrared Absorption in Nanostructured Si Through Se Implantation and Flash Lamp Annealing

Effective Carrier Lifetime in Ultrashort Pulse Laser Hyperdoped Silicon: Sulfur Concentration Dependence and Practical Limitations

Perspectives on Black Silicon in Semiconductor Manufacturing: Experimental Comparison of Plasma Etching, MACE, and Fs-Laser Etching

Excellent Responsivity and Low Dark Current Obtained With Metal-Assisted Chemical Etched Si Photodiode

Development of a selective wet-chemical etchant for precise 3D sculpting of silicon enabled by infrared non-linear laser modification

Boron-Implanted Black Silicon Photodiode with Close-to-Ideal Responsivity from 200 to 1000 nm

Effect of laser parameters and post-texturing treatments on the optical and electrical properties of laser textured c-Si wafers

Data set for paper 'Impact of post ion implantation annealing on Se-hyperdoped Ge'

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