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Carbon-Related Materials: Graphene and Carbon Nanotubes in Semiconductor Applications and Design

Micromachines (Basel), 2022-08, Vol.13 (8), p.1257

2022

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Silicon Nanowires for Gas Sensing: A Review

Nanomaterials (Basel, Switzerland), 2020-11, Vol.10 (11), p.2215

2020

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Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon

Nanomaterials (Basel, Switzerland), 2022-02, Vol.12 (5), p.741

2022

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State of the Art and Future Perspectives in Advanced CMOS Technology

Nanomaterials (Basel, Switzerland), 2020-08, Vol.10 (8), p.1555

2020

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Miniaturization of CMOS

Micromachines (Basel), 2019-04, Vol.10 (5), p.293

2019

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Special Issue: Silicon Nanodevices

Nanomaterials (Basel, Switzerland), 2022-06, Vol.12 (12), p.1980

2022

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Review of Si-Based GeSn CVD Growth and Optoelectronic Applications

Nanomaterials (Basel, Switzerland), 2021-09, Vol.11 (10), p.2556

2021

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The Challenges of Advanced CMOS Process from 2D to 3D

Applied sciences, 2017-10, Vol.7 (10), p.1047

2017

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Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate

Materials, 2022-05, Vol.15 (10), p.3594

2022

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A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm

Materials, 2020-02, Vol.13 (3), p.771

2020

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CMOS past, present and future

2018

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Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Nanomaterials (Basel, Switzerland), 2023-02, Vol.13 (3), p.606

2023

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High Performance p-i-n Photodetectors on Ge-on-Insulator Platform

Nanomaterials (Basel, Switzerland), 2021-04, Vol.11 (5), p.1125

2021

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Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices

Nanomaterials (Basel, Switzerland), 2021-03, Vol.11 (3), p.646

2021

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Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon

Nanomaterials (Basel, Switzerland), 2022-08, Vol.12 (15), p.2704

2022

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Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors Application

Nanoscale research letters, 2020-12, Vol.15 (1), p.225-225, Article 225

2020

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Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications

Nanomaterials (Basel, Switzerland), 2022-03, Vol.12 (6), p.981

2022

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Integration of highly-strained SiGe materials in 14 nm and beyond nodes FinFET technology

Solid-state electronics, 2015-01, Vol.103, p.222-228

2015

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Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser

Micromachines (Basel), 2022-09, Vol.13 (10), p.1579

2022

Volltextzugriff (PDF)

Monolithic Nanoscale Photonics-Electronics Integration in Silicon and Other Group IV Elements

Henry Radamson, Lars Thylen

1, 2014

Volltextzugriff (PDF)

Investigation on Ge0.8Si0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice

Nanomaterials (Basel, Switzerland), 2021-05, Vol.11 (6), p.1408

2021

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Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors

Nanomaterials (Basel, Switzerland), 2020-04, Vol.10 (4), p.793

2020

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pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 Precursors in 22 nm Node CMOS Technology

Nanoscale research letters, 2017-04, Vol.12 (1), p.306-306, Article 306

2017

Volltextzugriff (PDF)

Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD

Nanomaterials (Basel, Switzerland), 2021-04, Vol.11 (4), p.928

2021

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Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs

Nanomaterials (Basel, Switzerland), 2022-04, Vol.12 (9), p.1403

2022

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Carbon-Related Materials: Graphene and Carbon Nanotubes in Semiconductor Applications and Design

Silicon Nanowires for Gas Sensing: A Review

Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon

State of the Art and Future Perspectives in Advanced CMOS Technology

Miniaturization of CMOS

Special Issue: Silicon Nanodevices

Review of Si-Based GeSn CVD Growth and Optoelectronic Applications

The Challenges of Advanced CMOS Process from 2D to 3D

Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate

A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm

CMOS past, present and future

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

High Performance p-i-n Photodetectors on Ge-on-Insulator Platform

Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices

Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon

Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors Application

Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications

Integration of highly-strained SiGe materials in 14 nm and beyond nodes FinFET technology

Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser

Monolithic Nanoscale Photonics-Electronics Integration in Silicon and Other Group IV Elements

Investigation on Ge0.8Si0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice

Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors

pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 Precursors in 22 nm Node CMOS Technology

Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD

Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs

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