UB Paderborn / Katalog / Suche / in CDI

A model of antiparallel spontaneous and piezoelectric polarizations in AlGaN/GaN

AIP Conference Proceedings, 2019, Vol.2131 (1)

2019

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Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure

Applied surface science, 2014-09, Vol.312, p.102-106

2014

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Silicon based MIS photoanode for water oxidation: A comparison of RuO2 and Ni Schottky contacts

Applied surface science, 2018-12, Vol.461, p.48-53

2018

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Analysis of low temperature output parameters for investigation of silicon heterojunction solar cells

Applied surface science, 2017-02, Vol.395, p.166-171

2017

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Vertical current transport processes in MOS-HEMT heterostructures

Applied surface science, 2020-10, Vol.527, p.146605, Article 146605

2020

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Trap-assisted tunnelling current in MIM structures

Central European journal of physics, 2011-02, Vol.9 (1), p.230-241

2011

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Simulation of real I-V characteristics of metal/GaN/AlGaN heterostructure based on the 12-EXT model of trap-assisted tunnelling

Applied surface science, 2017-02, Vol.395, p.122-130

2017

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Raman spectroscopy of porous silicon substrates

Optik (Stuttgart), 2018-12, Vol.174, p.347-353

2018

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Deriving the exchange times for a model of trap-assisted tunnelling

Journal of Electrical Engineering, 2020-02, Vol.71 (1), p.31-36

2020

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Characterization of MIS photoanode with a thin SiO2 layer for photoelectrochemical water splitting

AIP Conference Proceedings, 2019, Vol.2131 (1)

2019

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Preparation of Fe-impregnated sepiolite catalytic layers for synthesis of carbon nanotube nanocomposites

AIP Conference Proceedings, 2019, Vol.2131 (1)

2019

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Raman spectroscopy of material burnt in electric arc (a case study)

AIP Conference Proceedings, 2018, Vol.1996 (1)

2018

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Simulation of Electrical Parameters for Ru/Ta2O5/SiO2/Si(p) High-k MOS Structure

Advances in electrical and electronic engineering, 2008-03, Vol.7 (1-2), p.385-388

2008

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A model of trap-assisted tunneling in GaN/AlGaN/GaN heterostructure based on exchange times

Applied surface science, 2014-09, Vol.312, p.68-73

2014

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Capacitance study of carrier inversion at the amorphous/crystalline silicon heterojunction passivated by different thicknesses of i-layer

Applied surface science, 2014-09, Vol.312, p.152-156

2014

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High-field electron mobility model of vertical charge transport in Al/Al2O3/GaN/AlGaN/GaN heterostructures

AIP Conference Proceedings, 2018, Vol.1996 (1)

2018

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Influence of the broken symmetry of defect state distribution at the a-Si:H/c-Si interface on the performance of hetero-junction solar cells

Applied surface science, 2010-07, Vol.256 (18), p.5662-5666

2010

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Trap-Assisted Tunneling in the Schottky Barrier

Radioengineering, 2013-04, Vol.22 (1), p.240-244

2013

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A New Model of Multiphonon Excitation Trap-Assisted Band-to-Band Tunneling

Radioengineering, 2012-04, Vol.21 (1), p.213-218

2012

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Coupled Defect Level Recombination in the P—N Junction

Journal of Electrical Engineering, 2011-11, Vol.62 (6), p.355-358

2011

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Extended thermionic emission-diffusion theory of charge transport through a Schottky diode

Solid-state electronics, 1996, Vol.39 (3), p.391-397

1996

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A novel device - Floating gate transistor for storing weight of neural networks

15th Conference on Microwave Techniques COMITE 2010, 2010, p.213-216

2010

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Some simulated properties of the pseudostructure of a floating gate MOS transistor

2009 32nd International Spring Seminar on Electronics Technology, 2009, p.1-3

2009

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A new model of trap assisted band-to-band tunnelling

The Eighth International Conference on Advanced Semiconductor Devices and Microsystems, 2010, p.195-198

2010

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Current transport in MIM Structures

2009 32nd International Spring Seminar on Electronics Technology, 2009, p.1-4

2009

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A model of antiparallel spontaneous and piezoelectric polarizations in AlGaN/GaN

Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure

Silicon based MIS photoanode for water oxidation: A comparison of RuO2 and Ni Schottky contacts

Analysis of low temperature output parameters for investigation of silicon heterojunction solar cells

Vertical current transport processes in MOS-HEMT heterostructures

Trap-assisted tunnelling current in MIM structures

Simulation of real I-V characteristics of metal/GaN/AlGaN heterostructure based on the 12-EXT model of trap-assisted tunnelling

Raman spectroscopy of porous silicon substrates

Deriving the exchange times for a model of trap-assisted tunnelling

Characterization of MIS photoanode with a thin SiO2 layer for photoelectrochemical water splitting

Preparation of Fe-impregnated sepiolite catalytic layers for synthesis of carbon nanotube nanocomposites

Raman spectroscopy of material burnt in electric arc (a case study)

Simulation of Electrical Parameters for Ru/Ta2O5/SiO2/Si(p) High-k MOS Structure

A model of trap-assisted tunneling in GaN/AlGaN/GaN heterostructure based on exchange times

Capacitance study of carrier inversion at the amorphous/crystalline silicon heterojunction passivated by different thicknesses of i-layer

High-field electron mobility model of vertical charge transport in Al/Al2O3/GaN/AlGaN/GaN heterostructures

Influence of the broken symmetry of defect state distribution at the a-Si:H/c-Si interface on the performance of hetero-junction solar cells

Trap-Assisted Tunneling in the Schottky Barrier

A New Model of Multiphonon Excitation Trap-Assisted Band-to-Band Tunneling

Coupled Defect Level Recombination in the P—N Junction

Extended thermionic emission-diffusion theory of charge transport through a Schottky diode

A novel device - Floating gate transistor for storing weight of neural networks

Some simulated properties of the pseudostructure of a floating gate MOS transistor

A new model of trap assisted band-to-band tunnelling

Current transport in MIM Structures

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