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SiGe BiCMOS technology for RF circuit applications

IEEE transactions on electron devices, 2005-07, Vol.52 (7), p.1259-1270

2005

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Device and technology evolution for Si-based RF integrated circuits

IEEE transactions on electron devices, 2005-07, Vol.52 (7), p.1235-1258

2005

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Foundry SOI technology for wireless front end modules

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013, p.1-4

2013

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A novel bipolar-MOSFET low-noise amplifier (BiFET LNA), circuit configuration, design methodology, and chip implementation

IEEE transactions on microwave theory and techniques, 2003-11, Vol.51 (11), p.2175-2180

2003

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Specialty Foundry technology and design enablement for RF, high performance analog, and power

IEEE Custom Integrated Circuits Conference 2010, 2010, p.1-4

2010

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A broad-band lumped element analytic model incorporating skin effect and substrate loss for inductors and inductor like components for silicon technology performance assessment and RFIC design

IEEE transactions on electron devices, 2005-07, Vol.52 (7), p.1429-1441

2005

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Impact of Proton Radiation on the Large-Signal Power Performance of SiGe Power HBTs

IEEE transactions on nuclear science, 2006-08, Vol.53 (4), p.2361-2366

2006

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Advances in foundry SiGe HBT BiCMOS processes through modeling and device scaling for ultra-high speed applications

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2021, p.1-5

2021

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Simulations of non-uniform, nonlinear collector doping profiles for SiGe HBTs

Semiconductor science and technology, 2007-01, Vol.22 (1), p.S144-S148

2007

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SiGe BiCMOS processes for commercial RF front-end-module applications

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2017, p.1-4

2017

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T-cell regulation by CD4 regulatory T cells during hepatitis B and C virus infections: facts and controversies

The Lancet infectious diseases, 2007-12, Vol.7 (12), p.804-813

2007

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Analysis of floating body induced transient behaviors in partially depleted thin film SOI devices

IEEE transactions on electron devices, 1996-02, Vol.43 (2), p.318-325

1996

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Low-temperature selective epitaxy by ultrahigh-vacuum chemical vapor deposition from SiH4 and GeH4/H2

Applied physics letters, 1991-05, Vol.58 (19), p.2096-2098

1991

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Evaluation of Albumin Kinetics in Critically Ill Patients With Coronavirus Disease 2019 Compared to Those With Sepsis-Induced Acute Respiratory Distress Syndrome

Critical care explorations, 2021-12, Vol.3 (12), p.e0589-e0589

2021

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Measurement of carrier generation lifetime in SOI devices

Solid-state electronics, 1999-02, Vol.43 (2), p.349-353

1999

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Advances in RF foundry technology for wireless and wireline communications

2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2016, p.5-8

2016

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Impact of ballast resistor implementations on power performance of SiGe power HBTs

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005, 2005, p.276-279

2005

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A simple technique to measure generation lifetime in partially depleted SOI MOSFETs

IEEE transactions on electron devices, 1998-11, Vol.45 (11), p.2378-2380

1998

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A millimeter-wave capable SiGe BiCMOS process with 270GHz FMAX HBTs designed for high volume manufacturing

2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2011, p.74-78

2011

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SOI technology for front end applications

2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), 2015, p.1-3

2015

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Characterizing and optimizing high Q inductors for RFIC design in silicon processes

IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003, 2003, p.339-342

2003

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Growth Rate of Doped and Undoped Silicon by Ultra‐High Vacuum Chemical Vapor Deposition

Journal of the Electrochemical Society, 1991-06, Vol.138 (6), p.1744-1748

1991

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Analysis of microwave noise sources in 150 GHz SiGe HBTs

2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers, 2004, p.291-294

2004

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Adaptability of a 280 GHz SiGe BiCMOS Process for High Frequency Commercial Applications

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012, p.1-4

2012

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TFSOI complementary BiCMOS technology for low power applications

IEEE transactions on electron devices, 1995-03, Vol.42 (3), p.506-512

1995

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SiGe BiCMOS technology for RF circuit applications

Device and technology evolution for Si-based RF integrated circuits

Foundry SOI technology for wireless front end modules

A novel bipolar-MOSFET low-noise amplifier (BiFET LNA), circuit configuration, design methodology, and chip implementation

Specialty Foundry technology and design enablement for RF, high performance analog, and power

A broad-band lumped element analytic model incorporating skin effect and substrate loss for inductors and inductor like components for silicon technology performance assessment and RFIC design

Impact of Proton Radiation on the Large-Signal Power Performance of SiGe Power HBTs

Advances in foundry SiGe HBT BiCMOS processes through modeling and device scaling for ultra-high speed applications

Simulations of non-uniform, nonlinear collector doping profiles for SiGe HBTs

SiGe BiCMOS processes for commercial RF front-end-module applications

T-cell regulation by CD4 regulatory T cells during hepatitis B and C virus infections: facts and controversies

Analysis of floating body induced transient behaviors in partially depleted thin film SOI devices

Low-temperature selective epitaxy by ultrahigh-vacuum chemical vapor deposition from SiH4 and GeH4/H2

Evaluation of Albumin Kinetics in Critically Ill Patients With Coronavirus Disease 2019 Compared to Those With Sepsis-Induced Acute Respiratory Distress Syndrome

Measurement of carrier generation lifetime in SOI devices

Advances in RF foundry technology for wireless and wireline communications

Impact of ballast resistor implementations on power performance of SiGe power HBTs

A simple technique to measure generation lifetime in partially depleted SOI MOSFETs

A millimeter-wave capable SiGe BiCMOS process with 270GHz FMAX HBTs designed for high volume manufacturing

SOI technology for front end applications

Characterizing and optimizing high Q inductors for RFIC design in silicon processes

Growth Rate of Doped and Undoped Silicon by Ultra‐High Vacuum Chemical Vapor Deposition

Analysis of microwave noise sources in 150 GHz SiGe HBTs

Adaptability of a 280 GHz SiGe BiCMOS Process for High Frequency Commercial Applications

TFSOI complementary BiCMOS technology for low power applications

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