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Eight-band k·p modeling of InAs/InGaAsSb type-II W-design quantum well structures for interband cascade lasers emitting in a broad range of mid infrared

Journal of applied physics, 2013-12, Vol.114 (22)

2013

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Eight-band k.p modeling of InAs/InGaAsSb type-II W-design quantum well structures for interband cascade lasers emitting in a broad range of mid infrared

Journal of applied physics, 2013-12, Vol.114 (22)

2013

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Polarization-independent gain in mid-infrared interband cascade lasers

AIP advances, 2016-11, Vol.6 (11), p.115020-115020-6

2016

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Type-II quantum wells with tensile-strained GaAsSb layers for interband cascade lasers with tailored valence band mixing

Applied physics letters, 2016-03, Vol.108 (10)

2016

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On the modified active region design of interband cascade lasers

Journal of applied physics, 2015-02, Vol.117 (8)

2015

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Investigating the physics of higher-order optical transitions in InAs/GaSb superlattices

Physical review. B, 2021-08, Vol.104 (8), p.1, Article 085410

2021

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Optimizing the active region of interband cascade lasers for passive mode-locking

AIP advances, 2017-01, Vol.7 (1), p.015015-015015-6

2017

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Effect of arsenic on the optical properties of GaSb-based type II quantum wells with quaternary GaInAsSb layers

Journal of applied physics, 2013-12, Vol.114 (22)

2013

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Verification of band offsets and electron effective masses in GaAsN/GaAs quantum wells: Spectroscopic experiment versus 10-band k·p modeling

Journal of applied physics, 2013-06, Vol.113 (23)

2013

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Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates

Optical and quantum electronics, 2016-08, Vol.48 (8), p.1-8, Article 401

2016

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Increasing the optical transition oscillator strength in GaSb-based type II quantum wells

Applied physics letters, 2012-06, Vol.100 (23), p.231908-231908-4

2012

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High magnetic field studies of charged exciton localization in GaAs/AlxGa1−xAs quantum wells

Applied physics letters, 2014-09, Vol.105 (11)

2014

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On the oscillator strength in dilute nitride quantum wells on GaAs

Journal of applied physics, 2012-06, Vol.111 (12)

2012

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Type II quantum wells on GaSb substrate designed for laser-based gas sensing applications in a broad range of mid infrared

Optical materials, 2012-05, Vol.34 (7), p.1107-1111

2012

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Optical properties of GaSb-based type II quantum wells as the active region of midinfrared interband cascade lasers for gas sensing applications

Applied physics letters, 2009-06, Vol.94 (25), p.251901-251901-3

2009

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Optical spectroscopy studies of atom intermixing in the core versus growth temperature of the claddings in MOCVD-grown quantum cascade lasers

Journal of physics communications, 2019-12, Vol.3 (12), p.125007

2019

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Photoreflectance investigations of oscillator strength and broadening of optical transitions for GaAsSb–GaInAs/GaAs bilayer quantum wells

Applied physics letters, 2004-05, Vol.84 (18), p.3453-3455

2004

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M-shaped quantum wells for active region of interband cascade laser

Optical materials, 2019-02, Vol.88, p.252-255

2019

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Crystal Orientation Dependence of the Fundamental Optical Transition in type-II W-Design Quantum Well Structures

Acta physica Polonica, A, 2014-11, Vol.126 (5), p.1149-1153

Ryczko, K.

2014

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Wetting layer states of InAs∕GaAs self-assembled quantum dot structures: Effect of intermixing and capping layer

Journal of applied physics, 2007-03, Vol.101 (6)

2007

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Carrier loss mechanisms in type II quantum wells for the active region of GaSb-based mid-infrared interband cascade lasers

Optical materials, 2011-09, Vol.33 (11), p.1817-1819

2011

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Carrier wavefunction control in a dilute nitride-based quantum well—a quantum dot tunnel injection system for 1.3 μm emission

Semiconductor science and technology, 2011-08, Vol.26 (8)

2011

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Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells

Journal of physics. Condensed matter, 2004-08, Vol.16 (31), p.S3071-S3094

2004

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Carrier wavefunction control in a dilute nitride-based quantum well—a quantum dot tunnel injection system for 1.3 µm emission

Semiconductor science and technology, 2011-08, Vol.26 (8), p.085004

2011

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Photoreflectance determination of the wetting layer thickness in the InxGa1−xAs∕GaAs quantum dot system for a broad indium content range of 0.3–1

Journal of applied physics, 2006-11, Vol.100 (10)

2006

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Eight-band k·p modeling of InAs/InGaAsSb type-II W-design quantum well structures for interband cascade lasers emitting in a broad range of mid infrared

Eight-band k.p modeling of InAs/InGaAsSb type-II W-design quantum well structures for interband cascade lasers emitting in a broad range of mid infrared

Polarization-independent gain in mid-infrared interband cascade lasers

Type-II quantum wells with tensile-strained GaAsSb layers for interband cascade lasers with tailored valence band mixing

On the modified active region design of interband cascade lasers

Investigating the physics of higher-order optical transitions in InAs/GaSb superlattices

Optimizing the active region of interband cascade lasers for passive mode-locking

Effect of arsenic on the optical properties of GaSb-based type II quantum wells with quaternary GaInAsSb layers

Verification of band offsets and electron effective masses in GaAsN/GaAs quantum wells: Spectroscopic experiment versus 10-band k·p modeling

Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates

Increasing the optical transition oscillator strength in GaSb-based type II quantum wells

High magnetic field studies of charged exciton localization in GaAs/AlxGa1−xAs quantum wells

On the oscillator strength in dilute nitride quantum wells on GaAs

Type II quantum wells on GaSb substrate designed for laser-based gas sensing applications in a broad range of mid infrared

Optical properties of GaSb-based type II quantum wells as the active region of midinfrared interband cascade lasers for gas sensing applications

Optical spectroscopy studies of atom intermixing in the core versus growth temperature of the claddings in MOCVD-grown quantum cascade lasers

Photoreflectance investigations of oscillator strength and broadening of optical transitions for GaAsSb–GaInAs/GaAs bilayer quantum wells

M-shaped quantum wells for active region of interband cascade laser

Crystal Orientation Dependence of the Fundamental Optical Transition in type-II W-Design Quantum Well Structures

Wetting layer states of InAs∕GaAs self-assembled quantum dot structures: Effect of intermixing and capping layer

Carrier loss mechanisms in type II quantum wells for the active region of GaSb-based mid-infrared interband cascade lasers

Carrier wavefunction control in a dilute nitride-based quantum well—a quantum dot tunnel injection system for 1.3 μm emission

Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells

Carrier wavefunction control in a dilute nitride-based quantum well—a quantum dot tunnel injection system for 1.3 µm emission

Photoreflectance determination of the wetting layer thickness in the InxGa1−xAs∕GaAs quantum dot system for a broad indium content range of 0.3–1

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