UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Comparative studies of interatomic potentials for modeling point defects in wurtzite GaN

AIP advances, 2023-01, Vol.13 (1), p.015015-015015-16

2023

Volltextzugriff (PDF)

Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission

Journal of applied physics, 2020-12, Vol.128 (22)

2020

Volltextzugriff (PDF)

The critical role of N-vacancy on chemical composition fluctuations and degradation of InAlN layer

Journal of applied physics, 2019-06, Vol.125 (21)

2019

Volltextzugriff (PDF)

Investigation of strain effects on phase diagrams in the ternary nitride alloys (InAlN, AlGaN, InGaN)

Physica status solidi. A, Applications and materials science, 2017-09, Vol.214 (9), p.1600752-n/a

2017

Volltextzugriff (PDF)

Nitride Semiconductors: Handbook on Materials and Devices

1. Aufl., 2006

Volltextzugriff (PDF)

Role of c-screw dislocations on indium segregation in InGaN and InAlN alloys

Applied physics letters, 2010-04, Vol.96 (16)

2010

Volltextzugriff (PDF)

A Theoretical Investigation of the Miscibility and Structural Properties of InxAlyGa1−x−yN Alloys

physica status solidi (b), 2018-05, Vol.255 (5), p.n/a

2018

Volltextzugriff (PDF)

Rare earth ion implantation and optical activation in nitride semiconductors for multicolor emission

Semiconductor science and technology, 2015-04, Vol.30 (4), p.44004

2015

Volltextzugriff (PDF)

Indium segregation mechanism and V-defect formation at the [0001] InAlN surface: an ab-initio investigation

Journal of physics. D, Applied physics, 2021-01, Vol.54 (1), p.15305

2021

Volltextzugriff (PDF)

Influences of the biaxial strain and c-screw dislocation on the clustering in InGaN alloys

Journal of applied physics, 2010-11, Vol.108 (10)

2010

Volltextzugriff (PDF)

Transition from Screw-Type to Edge-Type Misfit Dislocations at InGaN/GaN Heterointerfaces

Crystals (Basel), 2023-07, Vol.13 (7), p.1027

2023

Volltextzugriff (PDF)

Indium segregation mechanism and V-defects formation on (0001) InAlN surface: an ab-initio investigation

Journal of physics. D, Applied physics, 2020-10, Vol.54 (1)

2020

Volltextzugriff (PDF)

Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures

Applied physics express, 2019-01, Vol.12 (1), p.14001

2019

Volltextzugriff (PDF)

Mechanisms of Damage Formation during Rare Earth Ion Implantation in Nitride Semiconductors

Japanese Journal of Applied Physics, 2013-11, Vol.52 (11), p.11NH02-11NH02-7

2013

Volltextzugriff (PDF)

Electrical and structural investigation of Pt/n-type GaN Schottky contacts: The possible origin of inhomogeneous barrier

Materials science & engineering. B, Solid-state materials for advanced technology, 2024-12, Vol.310, p.117756, Article 117756

2024

Volltextzugriff (PDF)

Polarity control and residual strain in ZnO epilayers grown by molecular beam epitaxy on (0001) GaN/sapphire

Physica status solidi. PSS-RRL. Rapid research letters, 2016-09, Vol.10 (9), p.682-686

2016

Volltextzugriff (PDF)

Boundary crossing between higher education and the world of work: a case study in post-1994 Rwanda

Higher education research and development, 2014-09, Vol.33 (5), p.962-977

2014

Volltextzugriff (PDF)

On the temperature dependence of the current conduction mode in non-homogeneous Pt/n-GaN Schottky barrier diode

Physica. B, Condensed matter, 2024-07, Vol.684, p.415965, Article 415965

2024

Volltextzugriff (PDF)

The effect of N-vacancy and In aggregation on the properties of InAlN

Computational materials science, 2020-02, Vol.172, p.109384, Article 109384

2020

Volltextzugriff (PDF)

The [10-10] edge dislocation in the wurtzite structure: A high-resolution transmission electron microscopy investigation of [0001] tilt grain boundaries in GaN and ZnO

Acta materialia, 2019-08, Vol.175, p.457-465

2019

Volltextzugriff (PDF)

Stress relaxation in III-V nitrides: Investigation of metallic atoms interaction with the N-vacancy

Europhysics letters, 2022-03, Vol.137 (6), p.66003

2022

Volltextzugriff (PDF)

Enhancing the culture of reading in Rwanda: reflections by students in tertiary institutions

The Journal of Pan African studies, 2012-03, Vol.5 (1), p.36

Canisius Ruterana, Pierre

2012

Volltextzugriff (PDF)

Volume charge carrier number fluctuations probed by low frequency noise measurements in InN layers

Applied physics letters, 2011-06, Vol.98 (25), p.252104-252104-3

2011

Volltextzugriff (PDF)

Analysis of barrier inhomogeneities in Ti/p–type strained Si0.95Ge0.05 Schottky diodes using reverse current-voltage characteristics

Materials science in semiconductor processing, 2024-06, Vol.176, p.108314, Article 108314

2024

Volltextzugriff (PDF)

Children's reflections on gender equality in fairy tales: a Rwanda case study

The Journal of Pan African studies, 2012-01, Vol.4 (9), p.85

Ruterana, Pierre Canisius

2012

Volltextzugriff (PDF)

1 – 25 von 185

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(147)
Mit Volltextzugriff
(162)

Publikationsform

Sprache

Englisch
(183)

Erscheinungsjahr

n.n

Neu hinzugefügt

... seit 30 Tagen
(1)
... seit 90 Tagen
(3)

Menü

Weitere Dienste

Einstellungen

Comparative studies of interatomic potentials for modeling point defects in wurtzite GaN

Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission

The critical role of N-vacancy on chemical composition fluctuations and degradation of InAlN layer

Investigation of strain effects on phase diagrams in the ternary nitride alloys (InAlN, AlGaN, InGaN)

Nitride Semiconductors: Handbook on Materials and Devices

Role of c-screw dislocations on indium segregation in InGaN and InAlN alloys

A Theoretical Investigation of the Miscibility and Structural Properties of InxAlyGa1−x−yN Alloys

Rare earth ion implantation and optical activation in nitride semiconductors for multicolor emission

Indium segregation mechanism and V-defect formation at the [0001] InAlN surface: an ab-initio investigation

Influences of the biaxial strain and c-screw dislocation on the clustering in InGaN alloys

Transition from Screw-Type to Edge-Type Misfit Dislocations at InGaN/GaN Heterointerfaces

Indium segregation mechanism and V-defects formation on (0001) InAlN surface: an ab-initio investigation

Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures

Mechanisms of Damage Formation during Rare Earth Ion Implantation in Nitride Semiconductors

Electrical and structural investigation of Pt/n-type GaN Schottky contacts: The possible origin of inhomogeneous barrier

Polarity control and residual strain in ZnO epilayers grown by molecular beam epitaxy on (0001) GaN/sapphire

Boundary crossing between higher education and the world of work: a case study in post-1994 Rwanda

On the temperature dependence of the current conduction mode in non-homogeneous Pt/n-GaN Schottky barrier diode

The effect of N-vacancy and In aggregation on the properties of InAlN

The [10-10] edge dislocation in the wurtzite structure: A high-resolution transmission electron microscopy investigation of [0001] tilt grain boundaries in GaN and ZnO

Stress relaxation in III-V nitrides: Investigation of metallic atoms interaction with the N-vacancy

Enhancing the culture of reading in Rwanda: reflections by students in tertiary institutions

Volume charge carrier number fluctuations probed by low frequency noise measurements in InN layers

Analysis of barrier inhomogeneities in Ti/p–type strained Si0.95Ge0.05 Schottky diodes using reverse current-voltage characteristics

Children's reflections on gender equality in fairy tales: a Rwanda case study

Suchergebnisse filtern