UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

The strain models of misfit dislocations at cubic semiconductors hetero-interfaces

Applied physics letters, 2013-09, Vol.103 (10)

2013

Volltextzugriff (PDF)

Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus Si x N y

Nanotechnology, 2023-03, Vol.34 (24), p.245602

2023

Volltextzugriff (PDF)

Implantation damage formation in a-, c- and m-plane GaN

Acta materialia, 2017-01, Vol.123, p.177-187

2017

Volltextzugriff (PDF)

Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

Journal of applied physics, 2022-07, Vol.132 (3)

2022

Volltextzugriff (PDF)

InN/InAlN heterostructures for new generation of fast electronics

Journal of applied physics, 2024-06, Vol.135 (24)

2024

Volltextzugriff (PDF)

A mechanism for damage formation in GaN during rare earth ion implantation at medium range energy and room temperature

Journal of applied physics, 2011-01, Vol.109 (1), p.013506-013506-7

2011

Volltextzugriff (PDF)

High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics

Journal of applied physics, 2014-12, Vol.116 (23)

2014

Volltextzugriff (PDF)

Polarity determination of polar and semipolar (112¯2) InN and GaN layers by valence band photoemission spectroscopy

Journal of applied physics, 2013-11, Vol.114 (17)

2013

Volltextzugriff (PDF)

WALANT technique versus locoregional anesthesia in the surgical management of metacarpal and phalangeal fractures: Lessons from the Covid-19 crisis

Hand surgery and rehabilitation, 2022-04, Vol.41 (2), p.220-225

2022

Volltextzugriff (PDF)

Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperatures

Surface & coatings technology, 2018-12, Vol.355, p.29-39

2018

Volltextzugriff (PDF)

The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template

Journal of microscopy (Oxford), 2017-12, Vol.268 (3), p.269-275

2017

Volltextzugriff (PDF)

Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD

Journal of applied physics, 2019-03, Vol.125 (10)

2019

Volltextzugriff (PDF)

Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium

Journal of applied physics, 2016-10, Vol.120 (16)

2016

Volltextzugriff (PDF)

Stimulated emission via electron-hole plasma recombination in fully strained single InGaN/GaN heterostructures

Applied physics letters, 2016-11, Vol.109 (22)

2016

Volltextzugriff (PDF)

Influence of nanoscale faceting on the tunneling properties of near broken gap InAs AlGaSb heterojunctions grown by selective area epitaxy

Nanotechnology, 2014-11, Vol.25 (46), p.465302-465302

2014

Volltextzugriff (PDF)

Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.np-n/a

2017

Volltextzugriff (PDF)

Interface dislocations in InxGa1–xN/GaN heterostructures

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.n/a

2017

Volltextzugriff (PDF)

Effective absorption correction for energy dispersive X‐ray mapping in a scanning transmission electron microscope: analysing the local indium distribution in rough samples of InGaN alloy layers

Journal of microscopy (Oxford), 2017-12, Vol.268 (3), p.248-253

2017

Volltextzugriff (PDF)

Incorporation of Europium into GaN Nanowires by Ion Implantation

Journal of physical chemistry. C, 2019-05, Vol.123 (18), p.11874-11887

2019

Volltextzugriff (PDF)

Mechanisms of damage formation in Eu-implanted AlN

Journal of applied physics, 2012-10, Vol.112 (7)

2012

Volltextzugriff (PDF)

Defect structure in heteroepitaxial semipolar () (Ga, Al)N

Journal of physics. Condensed matter, 2010-09, Vol.22 (35), p.355802-355802

2010

Volltextzugriff (PDF)

Structural and optical characterization of Eu-implanted GaN

Journal of physics. D, Applied physics, 2009-08, Vol.42 (16), p.165103-165103 (11)

2009

Volltextzugriff (PDF)

Half metallic properties of the quaternary CuFe2GaSe4 chalcogenide compound

Computational materials science, 2014-04, Vol.85, p.159-163

2014

Volltextzugriff (PDF)

The source of the threading dislocation in GaSb/GaAs hetero-structures and their propagation mechanism

Applied physics letters, 2013-02, Vol.102 (5), p.052102-1-5

2013

Volltextzugriff (PDF)

Strain relief at the GaSb/GaAs interface versus substrate surface treatment and AlSb interlayers thickness

Journal of applied physics, 2011-01, Vol.109 (2), p.023509-023509-6

2011

Volltextzugriff (PDF)

1 – 25 von 443

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(355)
Mit Volltextzugriff
(384)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Neu hinzugefügt

... seit 90 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

The strain models of misfit dislocations at cubic semiconductors hetero-interfaces

Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus Si x N y

Implantation damage formation in a-, c- and m-plane GaN

Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

InN/InAlN heterostructures for new generation of fast electronics

A mechanism for damage formation in GaN during rare earth ion implantation at medium range energy and room temperature

High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics

Polarity determination of polar and semipolar (112¯2) InN and GaN layers by valence band photoemission spectroscopy

WALANT technique versus locoregional anesthesia in the surgical management of metacarpal and phalangeal fractures: Lessons from the Covid-19 crisis

Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperatures

The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template

Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD

Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium

Stimulated emission via electron-hole plasma recombination in fully strained single InGaN/GaN heterostructures

Influence of nanoscale faceting on the tunneling properties of near broken gap InAs AlGaSb heterojunctions grown by selective area epitaxy

Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure

Interface dislocations in InxGa1–xN/GaN heterostructures

Effective absorption correction for energy dispersive X‐ray mapping in a scanning transmission electron microscope: analysing the local indium distribution in rough samples of InGaN alloy layers

Incorporation of Europium into GaN Nanowires by Ion Implantation

Mechanisms of damage formation in Eu-implanted AlN

Defect structure in heteroepitaxial semipolar () (Ga, Al)N

Structural and optical characterization of Eu-implanted GaN

Half metallic properties of the quaternary CuFe2GaSe4 chalcogenide compound

The source of the threading dislocation in GaSb/GaAs hetero-structures and their propagation mechanism

Strain relief at the GaSb/GaAs interface versus substrate surface treatment and AlSb interlayers thickness

Suchergebnisse filtern