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GaN power switches on the rise: Demonstrated benefits and unrealized potentials

Applied physics letters, 2020-03, Vol.116 (9)

Chu, Rongming

2020

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An Experimental Demonstration of GaN CMOS Technology

IEEE electron device letters, 2016-03, Vol.37 (3), p.269-271

2016

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600 V/ 1.7~\Omega Normally-Off GaN Vertical Trench Metal–Oxide–Semiconductor Field-Effect Transistor

IEEE electron device letters, 2016-11, Vol.37 (11), p.1466-1469

2016

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Physics-based 3D simulation of single event transient current in GaN high-electron-mobility transistor and super-heterojunction field-effect transistor

Applied physics letters, 2024-04, Vol.124 (17)

2024

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Microstructural changes in GaN and AlN under 950 MeV Au swift heavy ion irradiation

Applied physics letters, 2024-03, Vol.124 (11)

2024

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1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance

IEEE electron device letters, 2011-05, Vol.32 (5), p.632-634

2011

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III-Nitride Electronic Devices

1, 2019

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Study of interface trap density of AlOxNy/GaN MOS structures

Applied physics letters, 2021-09, Vol.119 (12)

2021

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Investigation of phase evolution within ZnO–Bi2O3 varistors utilizing thin film prototypes

Journal of materials science, 2021-08, Vol.56 (22), p.12740-12752

2021

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Modeling and Characterization of Vertical GaN Schottky Diodes With AlGaN Cap Layers

IEEE transactions on electron devices, 2017-05, Vol.64 (5), p.2172-2178

2017

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AlGaN-GaN double-channel HEMTs

IEEE transactions on electron devices, 2005-04, Vol.52 (4), p.438-446

2005

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Effect of Substrate Choice on Transient Performance of Lateral GaN FETs

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.331-335

2020

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Effects of Barrier Thinning on Small-Signal and 30-GHz Power Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors

IEEE transactions on electron devices, 2011-06, Vol.58 (6), p.1681-1686

2011

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Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition

Applied physics letters, 2009-04, Vol.94 (15), p.153506-153506-3

2009

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V-Gate GaN HEMTs With Engineered Buffer for Normally Off Operation

IEEE electron device letters, 2008-11, Vol.29 (11), p.1184-1186

2008

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A comparative study of effects of SiNx deposition method on AlGaN/GaN heterostructure field-effect transistors

Applied physics letters, 2009-02, Vol.94 (5)

2009

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Plasma Treatment for Leakage Reduction in AlGaN/GaN and GaN Schottky Contacts

IEEE electron device letters, 2008-04, Vol.29 (4), p.297-299

2008

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High-Speed, Enhancement-Mode GaN Power Switch With Regrown n+ GaN Ohmic Contacts and Staircase Field Plates

IEEE electron device letters, 2013, Vol.34 (9), p.1118-1120

2013

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Recent advances in GaN power electronics

Proceedings of the IEEE 2013 Custom Integrated Circuits Conference, 2013, p.1-4

2013

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Impact of CF4 plasma treatment on GaN

IEEE electron device letters, 2007-09, Vol.28 (9), p.781-783

2007

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N-Face Metal-Insulator-Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier

IEEE electron device letters, 2008-10, Vol.29 (10), p.1101-1104

2008

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GaN MOS Structures with Low Interface Trap Density

Solid state phenomena, 2021-02, Vol.314, p.79-83

Chu, Rong Ming

2021

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V-Gate GaN HEMTs for X-Band Power Applications

IEEE electron device letters, 2008-09, Vol.29 (9), p.974-976

2008

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Improvement of the dynamic on-resistance characteristics of GaN-on-Si power transistors with a sloped field-plate

72nd Device Research Conference, 2014, p.257-258

2014

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Normally-Off GaN-on-Si transistors enabling nanosecond power switching at one kilowatt

71st Device Research Conference, 2013, p.199-200

2013

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GaN power switches on the rise: Demonstrated benefits and unrealized potentials

An Experimental Demonstration of GaN CMOS Technology

600 V/ 1.7~\Omega Normally-Off GaN Vertical Trench Metal–Oxide–Semiconductor Field-Effect Transistor

Physics-based 3D simulation of single event transient current in GaN high-electron-mobility transistor and super-heterojunction field-effect transistor

Microstructural changes in GaN and AlN under 950 MeV Au swift heavy ion irradiation

1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance

III-Nitride Electronic Devices

Study of interface trap density of AlOxNy/GaN MOS structures

Investigation of phase evolution within ZnO–Bi2O3 varistors utilizing thin film prototypes

Modeling and Characterization of Vertical GaN Schottky Diodes With AlGaN Cap Layers

AlGaN-GaN double-channel HEMTs

Effect of Substrate Choice on Transient Performance of Lateral GaN FETs

Effects of Barrier Thinning on Small-Signal and 30-GHz Power Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors

Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition

V-Gate GaN HEMTs With Engineered Buffer for Normally Off Operation

A comparative study of effects of SiNx deposition method on AlGaN/GaN heterostructure field-effect transistors

Plasma Treatment for Leakage Reduction in AlGaN/GaN and GaN Schottky Contacts

High-Speed, Enhancement-Mode GaN Power Switch With Regrown n+ GaN Ohmic Contacts and Staircase Field Plates

Recent advances in GaN power electronics

Impact of CF4 plasma treatment on GaN

N-Face Metal-Insulator-Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier

GaN MOS Structures with Low Interface Trap Density

V-Gate GaN HEMTs for X-Band Power Applications

Improvement of the dynamic on-resistance characteristics of GaN-on-Si power transistors with a sloped field-plate

Normally-Off GaN-on-Si transistors enabling nanosecond power switching at one kilowatt

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