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Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model

Journal of applied physics, 2016-12, Vol.120 (22)

2016

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Blocking growth by an electrically active subsurface layer: the effect of Si as an antisurfactant in the growth of GaN

Physical review letters, 2013-01, Vol.110 (3), p.036103-036103, Article 036103

2013

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Analysis of statistical compositional alloy fluctuations in InGaN from aberration corrected transmission electron microscopy image series

Journal of applied physics, 2012-08, Vol.112 (3)

2012

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Strain induced deep electronic states around threading dislocations in GaN

Physical review letters, 2004-11, Vol.93 (19), p.196401.1-196401.4, Article 196401

2004

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Three dimensional analysis of the composition in solid alloys by variable probe in scanning transmission electron microscopy

Ultramicroscopy, 2014-11, Vol.146, p.62-70

2014

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Refractive index and interband transitions in strain modified NaNbO3 thin films grown by MOCVD

Journal of physics. D, Applied physics, 2015-09, Vol.48 (38)

2015

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Pyramidal inversion domain boundaries revisited

Applied physics letters, 2011-10, Vol.99 (14), p.141913-141913-3

2011

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Growth mechanisms in semipolar (202¯1) and nonpolar m-plane (101¯0) AlGaN/GaN structures grown by PAMBE under N-rich conditions

Journal of crystal growth, 2013-08, Vol.377, p.184-191

2013

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Si-doped GaN∕AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths

Journal of applied physics, 2006-08, Vol.100 (4)

2006

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Separating strain from composition in unit cell parameter maps obtained from aberration corrected high resolution transmission electron microscopy imaging

Journal of applied physics, 2014-01, Vol.115 (3)

2014

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Effect of annealing on the In and N distribution in InGaAsN quantum wells

Applied physics letters, 2002-10, Vol.81 (15), p.2719-2721

2002

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Methods for Scanning Transmission Electron Microscopy High Angle Annular Dark Field Based for Three Dimensional Analysis of the Local Composition in Solid Alloys

Microscopy and microanalysis, 2014-08, Vol.20 (S3), p.594-595

2014

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Electron confinement in strongly coupled GaN∕AlN quantum wells

Applied physics letters, 2006-04, Vol.88 (15)

2006

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Strain-induced interface instability in GaN∕AlN multiple quantum wells

Applied physics letters, 2007-08, Vol.91 (6)

2007

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Short-wavelength intersubband electroabsorption modulation based on electron tunneling between GaN∕AlN coupled quantum wells

Applied physics letters, 2007-05, Vol.90 (22)

2007

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Publisher’s Note: “Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202¯1) substrates” [Appl. Phys. Lett. 102, 111107 (2013)]

Applied physics letters, 2014-05, Vol.104 (20)

2014

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X-ray diffraction from nonperiodic layered structures with correlations: analytical calculation and experiment on mixed Aurivillius films

Acta crystallographica. Section A, Foundations of crystallography, 2012-01, Vol.68 (1), p.148-155

2012

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Compositional correlation and anticorrelation in quaternary alloys: competition between bulk thermodynamics and surface kinetics

Physical review letters, 2007-11, Vol.99 (20), p.206103-206103, Article 206103

2007

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Simultaneous experimental evaluation of In and N concentrations in InGaAsN quantum wells

Journal of applied physics, 2001-10, Vol.90 (8), p.3792-3798

2001

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Influence of structural nonuniformity and nonradiative processes on the luminescence efficiency of InGaAsN quantum wells

Applied physics letters, 2006-01, Vol.88 (1)

2006

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Bi-stable behaviour in GaN-based resonant tunnelling diode structures

Physica status solidi. C, 2008-02, Vol.5 (2), p.431-434

2008

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Coloration of zinc oxide crystals originating from particle plasmons

Physica status solidi. C, 2009-12, Vol.6 (12), p.2658-2660

2009

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GaN/AlN short-period superlattices for intersubband optoelectronics:A systematic study of their epitaxial growth, design, and performance

Journal of applied physics, 2008-11, Vol.104 (9), p.093501-093501-16

2008

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Optical and theoretical study of strong electron coupling in double GaN/AlN quantum wells

Physica Status Solidi (b), 2006-06, Vol.243 (7), p.1630-1633

2006

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Microscopic lateral overgrowth by physical vapour transport of GaN on self-organized diamond-like carbon masks

Crystal research and technology (1979), 2009-10, Vol.44 (10), p.1078-1082

2009

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Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model

Blocking growth by an electrically active subsurface layer: the effect of Si as an antisurfactant in the growth of GaN

Analysis of statistical compositional alloy fluctuations in InGaN from aberration corrected transmission electron microscopy image series

Strain induced deep electronic states around threading dislocations in GaN

Three dimensional analysis of the composition in solid alloys by variable probe in scanning transmission electron microscopy

Refractive index and interband transitions in strain modified NaNbO3 thin films grown by MOCVD

Pyramidal inversion domain boundaries revisited

Growth mechanisms in semipolar (202¯1) and nonpolar m-plane (101¯0) AlGaN/GaN structures grown by PAMBE under N-rich conditions

Si-doped GaN∕AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths

Separating strain from composition in unit cell parameter maps obtained from aberration corrected high resolution transmission electron microscopy imaging

Effect of annealing on the In and N distribution in InGaAsN quantum wells

Methods for Scanning Transmission Electron Microscopy High Angle Annular Dark Field Based for Three Dimensional Analysis of the Local Composition in Solid Alloys

Electron confinement in strongly coupled GaN∕AlN quantum wells

Strain-induced interface instability in GaN∕AlN multiple quantum wells

Short-wavelength intersubband electroabsorption modulation based on electron tunneling between GaN∕AlN coupled quantum wells

Publisher’s Note: “Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202¯1) substrates” [Appl. Phys. Lett. 102, 111107 (2013)]

X-ray diffraction from nonperiodic layered structures with correlations: analytical calculation and experiment on mixed Aurivillius films

Compositional correlation and anticorrelation in quaternary alloys: competition between bulk thermodynamics and surface kinetics

Simultaneous experimental evaluation of In and N concentrations in InGaAsN quantum wells

Influence of structural nonuniformity and nonradiative processes on the luminescence efficiency of InGaAsN quantum wells

Bi-stable behaviour in GaN-based resonant tunnelling diode structures

Coloration of zinc oxide crystals originating from particle plasmons

GaN/AlN short-period superlattices for intersubband optoelectronics:A systematic study of their epitaxial growth, design, and performance

Optical and theoretical study of strong electron coupling in double GaN/AlN quantum wells

Microscopic lateral overgrowth by physical vapour transport of GaN on self-organized diamond-like carbon masks

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