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Study of interfaces chemistry in type-II GaSb/InAs superlattice structures

Thin solid films, 2012-11, Vol.522, p.223-227

2012

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Role of beryllium doping in strain changes in II-type InAs/GaSb superlattice investigated by high resolution X-ray diffraction method

Applied physics. A, Materials science & processing, 2012-08, Vol.108 (2), p.491-496

2012

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Continuously tunable Yb:KYW femtosecond oscillator based on a tunable highly dispersive semiconductor mirror

Optics express, 2014-07, Vol.22 (15), p.18284-18289

2014

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Conductivity analysis of n-GaAs molecular beam epitaxial layers using multicarrier fitting

Journal of applied physics, 2006-05, Vol.99 (9)

2006

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Non-periodicity of peak-to-peak distances in x-ray diffraction spectrums from perfect superlattices

Journal of applied physics, 2013-02, Vol.113 (6)

2013

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Blueshift of bandgap energy and reduction of non-radiative defect density due to precise control of InAs-on-GaSb interface in type-II InAs/GaSb superlattice

Journal of applied physics, 2011-12, Vol.110 (12), p.123103-123103-5

2011

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Method of determination of AlGaAsSb layer composition in molecular beam epitaxy processes with regard to unintentional As incorporation

Journal of applied physics, 2011-10, Vol.110 (7), p.073509-073509-7

2011

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A passively mode-locked, self-starting femtosecond Yb:KYW laser with a single highly dispersive semiconductor double-chirped mirror for dispersion compensation

Laser physics letters, 2013-08, Vol.10 (8), p.85302

2013

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Electrical charge transport of n–InAs epitaxial films on GaAs

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-03, Vol.90 (1), p.176-179

2002

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Oval Defects in the MBE Grown AlGaAs/InGaAs/GaAs and InGaAs/GaAs Structures

Crystal research and technology (1979), 1999-06, Vol.34 (5-6), p.683-687

1999

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Negative magnetoresistance and impurity band conduction in an In0.53Ga0.47As/InP heterostructure

Journal of applied physics, 1999-05, Vol.85 (9), p.6619-6624

1999

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Thickness dependence of the structural and electrical properties of InAs layers epitaxially grown by MBE on GaAs (001)

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-09, Vol.77 (3), p.250-254

2000

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Semiconductor saturable absorbers of laser radiation for the wavelength of 808 nm grown by MBE: Choice of growth conditions

Vacuum, 2008-06, Vol.82 (10), p.947-950

2008

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Stress-induced structural changes in thin InAs layers grown on GaAs substrate

Crystal research and technology (1979), 2003-04, Vol.38 (3-5), p.302-306

2003

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Mobility spectrum approach in the analysis of the electrical conduction of a GaAs layer grown by molecular beam epitaxy

Journal of applied physics, 1997-12, Vol.82 (12), p.6102-6106

1997

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Conductivity analysis of n - Ga As molecular beam epitaxial layersusing multicarrier fitting

Journal of applied physics, 2006-05, Vol.99 (9), p.093708-093708-8

2006

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Analysis of electrical conduction in an n -type GaAs epilayer

Applied physics. A, Materials science & processing, 2003-12, Vol.77 (7), p.937-945

2003

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Self- and impurity-ion beam mixing in molecular beam epitaxy-grown Ga(Al)As and Cd(Mn)Te structures

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1997-05, Vol.127, p.51-54

1997

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Photoluminescence studies of p-type modulation doped GaAs/AlGaAs quantum wells in the high doping regime

Physica scripta, 1999-01, Vol.1999 (1), p.120

1999

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Three- versus two-dimensional electron gas injection in resonant tunnelling devices

Microelectronic engineering, 1998-08, Vol.43-44, p.377-382

1998

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Study of Interfaces Chemistry in Type-II GaSb/InAs Superlattice Structures

Physics procedia, 2012, Vol.32, p.184-190

2012

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Optical Properties of p-Type Modulation Doped GaAs/AlGaAs Quantum Wells

physica status solidi (b), 1998-12, Vol.210 (2), p.615-620

1998

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Structural changes induced by implantation with 3 MeV/amu nitrogen ions in GaAs single crystals

Journal of alloys and compounds, 2004-01, Vol.362 (1), p.248-253

2004

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Optical injection of spin-polarized carriers across a strongly mismatched heterostructure

Solid state communications, 2001-07, Vol.119 (6), p.371-376

2001

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A method for calculating the conductivity mobility spectrum using multi-carrier fitting

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-06, Vol.110 (1), p.79-86

2004

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Study of interfaces chemistry in type-II GaSb/InAs superlattice structures

Role of beryllium doping in strain changes in II-type InAs/GaSb superlattice investigated by high resolution X-ray diffraction method

Continuously tunable Yb:KYW femtosecond oscillator based on a tunable highly dispersive semiconductor mirror

Conductivity analysis of n-GaAs molecular beam epitaxial layers using multicarrier fitting

Non-periodicity of peak-to-peak distances in x-ray diffraction spectrums from perfect superlattices

Blueshift of bandgap energy and reduction of non-radiative defect density due to precise control of InAs-on-GaSb interface in type-II InAs/GaSb superlattice

Method of determination of AlGaAsSb layer composition in molecular beam epitaxy processes with regard to unintentional As incorporation

A passively mode-locked, self-starting femtosecond Yb:KYW laser with a single highly dispersive semiconductor double-chirped mirror for dispersion compensation

Electrical charge transport of n–InAs epitaxial films on GaAs

Oval Defects in the MBE Grown AlGaAs/InGaAs/GaAs and InGaAs/GaAs Structures

Negative magnetoresistance and impurity band conduction in an In0.53Ga0.47As/InP heterostructure

Thickness dependence of the structural and electrical properties of InAs layers epitaxially grown by MBE on GaAs (001)

Semiconductor saturable absorbers of laser radiation for the wavelength of 808 nm grown by MBE: Choice of growth conditions

Stress-induced structural changes in thin InAs layers grown on GaAs substrate

Mobility spectrum approach in the analysis of the electrical conduction of a GaAs layer grown by molecular beam epitaxy

Conductivity analysis of n - Ga As molecular beam epitaxial layersusing multicarrier fitting

Analysis of electrical conduction in an n -type GaAs epilayer

Self- and impurity-ion beam mixing in molecular beam epitaxy-grown Ga(Al)As and Cd(Mn)Te structures

Photoluminescence studies of p-type modulation doped GaAs/AlGaAs quantum wells in the high doping regime

Three- versus two-dimensional electron gas injection in resonant tunnelling devices

Study of Interfaces Chemistry in Type-II GaSb/InAs Superlattice Structures

Optical Properties of p-Type Modulation Doped GaAs/AlGaAs Quantum Wells

Structural changes induced by implantation with 3 MeV/amu nitrogen ions in GaAs single crystals

Optical injection of spin-polarized carriers across a strongly mismatched heterostructure

A method for calculating the conductivity mobility spectrum using multi-carrier fitting

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