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Will Kleber (1906-1970) - forerunner of modern crystallography at Humboldt University of Berlin

Crystal research and technology (1979), 2007-11, Vol.42 (11), p.1046-1053

2007

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Scapular motion in the presence of rotator cuff tears: a systematic review

Journal of shoulder and elbow surgery, 2021-07, Vol.30 (7), p.1679-1692

2021

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Effect of growth conditions and strain compensation on indium incorporation for diode lasers emitting above 1050 nm

Journal of crystal growth, 2000-12, Vol.221 (1), p.496-502

2000

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On the performance assessment and comparison of stochastic multiobjective optimizers

Parallel Problem Solving from Nature — PPSN IV, 2005, p.584-593

2005

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Facet degradation of high-power diode laser arrays

Applied physics. A, Materials science & processing, 2000-04, Vol.70 (4), p.377-381

2000

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Comparison of binary and ternary growth over trenches using MOVPE

Journal of crystal growth, 2000-06, Vol.213 (3), p.229-234

2000

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Interdiffusion-induced degradation of 1017 nm ridge waveguide laser diodes

Journal of crystal growth, 2000-03, Vol.210 (1), p.307-312

2000

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Patterned growth of (AlGa)As using metalorganic vapor-phase epitaxy

Journal of crystal growth, 1999-11, Vol.206 (4), p.255-262

1999

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Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE

Journal of electronic materials, 2000-02, Vol.29 (2), p.205-209

2000

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Overgrowth of trenches with (AlGa)As using metalorganic vapor-phase epitaxy (MOVPE)

Journal of crystal growth, 1998-12, Vol.195 (1), p.485-489

1998

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MOVPE growth of AlGaAs/GaInP diode lasers

Journal of electronic materials, 2000-01, Vol.29 (1), p.57-61

2000

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{110} and {111} Ordering in MOVPE-grown (Ga,In)P on (001) GaAs Substrates at Low Temperature

Crystal research and technology (1979), 2000-07, Vol.35 (6-7), p.831-837

2000

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Influence of the growth temperature and substrate orientation on the layer properties of MOVPE-grown (Ga,In)(As,P)/GaAs

Journal of crystal growth, 1997, Vol.170 (1-4), p.281-286

1997

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From recombination of genes to the estimation of distributions I. Binary parameters

Parallel Problem Solving from Nature — PPSN IV, 1996, p.178-187

1996

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Case studies in evolutionary experimentation and computation: Genetic and evolutionary computation

Computer methods in applied mechanics and engineering, 2000, Vol.186 (2-4), p.125-140

RECHENBERG, I

2000

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Direct Growth of GaN on (0001) Sapphire by Low Pressure Hydride Vapour Phase Epitaxy

Physica status solidi. A, Applied research, 2001-11, Vol.188 (1), p.439-442

2001

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AES Depth Profiling of Semiconducting Epitaxial Layers with Thicknesses in the Nanometre Range Using an Ion Beam Bevelling Technique

Surface and interface analysis, 1997-06, Vol.25 (6), p.458-463

1997

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Effect of growth interruption on performance of AlGaAs/InGaAs/GaAs quantum well lasers

Journal of crystal growth, 1994-12, Vol.145 (1), p.907-910

1994

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Influence of the growth temperature and substrate orientation on the layer properties of MOVPE-growth [formula omitted]

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.281-286

1997

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Effect of growth temperature on performance of AlGaAs/InGaAs/GaAs QW laser diodes

Journal of electronic materials, 1996-02, Vol.25 (2), p.309-312

1996

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A study of some properties of Ant-Q

Parallel Problem Solving from Nature — PPSN IV, 2005, p.656-665

2005

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AES depth profiling of semiconducting multilayer structures using an ion beam bevelling technique

Fresenius' journal of analytical chemistry, 1997-05, Vol.358 (1-2), p.358-360

1997

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On permutation representations for scheduling problems

Parallel Problem Solving from Nature — PPSN IV, 2005, p.310-318

2005

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Defect-free growth of AlxGa1-xAs by liquid-phase epitaxy on V-grooved (001) GaAs substrates

Journal of applied physics, 1991-06, Vol.69 (12), p.8154-8157

1991

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Potential sources of degradation in InGaAs/GaAs laser diodes

Materials science & engineering. B, Solid-state materials for advanced technology, 1994-12, Vol.28 (1), p.310-313

1994

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Will Kleber (1906-1970) - forerunner of modern crystallography at Humboldt University of Berlin

Scapular motion in the presence of rotator cuff tears: a systematic review

Effect of growth conditions and strain compensation on indium incorporation for diode lasers emitting above 1050 nm

On the performance assessment and comparison of stochastic multiobjective optimizers

Facet degradation of high-power diode laser arrays

Comparison of binary and ternary growth over trenches using MOVPE

Interdiffusion-induced degradation of 1017 nm ridge waveguide laser diodes

Patterned growth of (AlGa)As using metalorganic vapor-phase epitaxy

Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE

Overgrowth of trenches with (AlGa)As using metalorganic vapor-phase epitaxy (MOVPE)

MOVPE growth of AlGaAs/GaInP diode lasers

{110} and {111} Ordering in MOVPE-grown (Ga,In)P on (001) GaAs Substrates at Low Temperature

Influence of the growth temperature and substrate orientation on the layer properties of MOVPE-grown (Ga,In)(As,P)/GaAs

From recombination of genes to the estimation of distributions I. Binary parameters

Case studies in evolutionary experimentation and computation: Genetic and evolutionary computation

Direct Growth of GaN on (0001) Sapphire by Low Pressure Hydride Vapour Phase Epitaxy

AES Depth Profiling of Semiconducting Epitaxial Layers with Thicknesses in the Nanometre Range Using an Ion Beam Bevelling Technique

Effect of growth interruption on performance of AlGaAs/InGaAs/GaAs quantum well lasers

Influence of the growth temperature and substrate orientation on the layer properties of MOVPE-growth [formula omitted]

Effect of growth temperature on performance of AlGaAs/InGaAs/GaAs QW laser diodes

A study of some properties of Ant-Q

AES depth profiling of semiconducting multilayer structures using an ion beam bevelling technique

On permutation representations for scheduling problems

Defect-free growth of AlxGa1-xAs by liquid-phase epitaxy on V-grooved (001) GaAs substrates

Potential sources of degradation in InGaAs/GaAs laser diodes

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