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Magnetothermal properties of two-dimensional electron gas in matched AlGaAs/GaABiN structure

Applied physics. A, Materials science & processing, 2024-05, Vol.130 (5), Article 314

2024

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Effect of InAs buffer layer thickness on physical properties of InAsBi heterostructures grown by MOCVD

Journal of crystal growth, 2020-11, Vol.549, p.125881, Article 125881

2020

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Tunneling in matched AlGaAs/GaAsBiN superlattices

Applied physics. A, Materials science & processing, 2022-05, Vol.128 (5), Article 413

2022

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In situ monitoring of InAsBi alloy grown under alternated bismuth flows by metalorganic vapor phase epitaxy

Materials science & engineering. B, Solid-state materials for advanced technology, 2019-02, Vol.241, p.22-26

2019

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Analysis of growth mechanisms and microstructure evolution of Pb+2 minor concentrations by electrodeposition technique

European physical journal plus, 2022-03, Vol.137 (3), p.295, Article 295

2022

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Structural, Electronic and Optical Properties of the Ordered InP1 – xBix: An Ab-Initio Study

Russian journal of physical chemistry. B, 2023-08, Vol.17 (4), p.868-877

2023

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A Systematic Methodology for the Analysis of Multicomponent Photoreflectance Spectra Applied to GaAsBi/GaAs Structure

Physics of the solid state, 2020-06, Vol.62 (6), p.1060-1066

2020

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Optical Investigation of p-GaAs/i-GaN0.38yAs1-1.38ySby/n-GaAs Quantum Wells Emitters

Journal of nanotechnology, 2022, Vol.2022, p.1-6

2022

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First principles calculations of structural and electronic properties of GaN1−xBix alloys

Journal of alloys and compounds, 2012-07, Vol.530, p.36-39

2012

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First-principles calculation of the physical properties of GaAs1-xBix alloys

Semiconductor science and technology, 2011-10, Vol.26 (10), p.105020-2

2011

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Pseudo-Almost Periodic Solutions in the Alpha-Norm and in Stepanov’s Sense for some Evolution Equations

Ukrainian mathematical journal, 2023-03, Vol.74 (10), p.1599-1616

2023

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Electron Mobility Calculation of Diluted III–V-Nitrides Alloys

Semiconductors (Woodbury, N.Y.), 2019-12, Vol.53 (13), p.1740-1744

2019

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Study of Stark Effect in n-doped 1.55 μm InN0.92yP1−1.92yBiy/InP MQWs

Journal of electronic materials, 2018-08, Vol.47 (8), p.4757-4763

2018

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Ab initio investigation of structural and electronic properties of zinc blende AlN1−xBix alloys

Solid state communications, 2013-02, Vol.155, p.12-15

2013

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Influence of the Substrate Material on the Structure and Morphological Properties of Bi Films

Surface investigation, x-ray, synchrotron and neutron techniques, 2022-10, Vol.16 (5), p.783-788

2022

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MOVPE growth of InAsBi/InAs/GaAs heterostructure analyzed by in situ spectral reflectance

Journal of materials science. Materials in electronics, 2017-06, Vol.28 (12), p.8708-8716

2017

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Electronic band structure calculation of GaNAsBi alloys and effective mass study

Infrared physics & technology, 2013-11, Vol.61, p.88-93

2013

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Atmospheric-pressure metalorganic vapour phase epitaxy optimization of GaAsBi alloy

Thin solid films, 2008-10, Vol.516 (23), p.8372-8376

2008

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Bismuth catalyzed growth of GaAsBi nanowires by metalorganic vapor phase epitaxy

Materials letters, 2015-08, Vol.152, p.298-301

2015

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Stark effect in GaNAsBi/GaAs quantum wells operating at 1.55μm

Thin solid films, 2015-04, Vol.581, p.70-74

2015

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Effect of growth temperature and GaAs substrate misorientation on the morphology of InAsBi nanoislands grown by metalorganic vapor phase epitaxy

Applied surface science, 2014-02, Vol.291, p.40-44

2014

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First-principles study of atomic and electronic structure of Bi/InP (001)- α 2 (2 × 4) and β 2 (2 × 4) surfaces

Materials research express, 2019-08, Vol.6 (10), p.106303

2019

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Comprehensive study of the structural, optical and electrical properties of InAlAs: Mg films lattice matched to InP grown by MOVPE

Journal of materials science. Materials in electronics, 2017-12, Vol.28 (23), p.18221-18227

2017

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Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy

Semiconductor science and technology, 2010-06, Vol.25 (6), p.065009-065009

2010

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TEMPERATURE DEPENDENCE ON THE MORPHOLOGICAL EVOLUTION OF DILUTE InAsBi/GaAs NANOSTRUCTURES GROWN BY METALORGANIC VAPOR PHASE EPITAXY

Surface review and letters, 2017-12, Vol.24 (8), p.1750105

2017

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Magnetothermal properties of two-dimensional electron gas in matched AlGaAs/GaABiN structure

Effect of InAs buffer layer thickness on physical properties of InAsBi heterostructures grown by MOCVD

Tunneling in matched AlGaAs/GaAsBiN superlattices

In situ monitoring of InAsBi alloy grown under alternated bismuth flows by metalorganic vapor phase epitaxy

Analysis of growth mechanisms and microstructure evolution of Pb+2 minor concentrations by electrodeposition technique

Structural, Electronic and Optical Properties of the Ordered InP1 – xBix: An Ab-Initio Study

A Systematic Methodology for the Analysis of Multicomponent Photoreflectance Spectra Applied to GaAsBi/GaAs Structure

Optical Investigation of p-GaAs/i-GaN0.38yAs1-1.38ySby/n-GaAs Quantum Wells Emitters

First principles calculations of structural and electronic properties of GaN1−xBix alloys

First-principles calculation of the physical properties of GaAs1-xBix alloys

Pseudo-Almost Periodic Solutions in the Alpha-Norm and in Stepanov’s Sense for some Evolution Equations

Electron Mobility Calculation of Diluted III–V-Nitrides Alloys

Study of Stark Effect in n-doped 1.55 μm InN0.92yP1−1.92yBiy/InP MQWs

Ab initio investigation of structural and electronic properties of zinc blende AlN1−xBix alloys

Influence of the Substrate Material on the Structure and Morphological Properties of Bi Films

MOVPE growth of InAsBi/InAs/GaAs heterostructure analyzed by in situ spectral reflectance

Electronic band structure calculation of GaNAsBi alloys and effective mass study

Atmospheric-pressure metalorganic vapour phase epitaxy optimization of GaAsBi alloy

Bismuth catalyzed growth of GaAsBi nanowires by metalorganic vapor phase epitaxy

Stark effect in GaNAsBi/GaAs quantum wells operating at 1.55μm

Effect of growth temperature and GaAs substrate misorientation on the morphology of InAsBi nanoislands grown by metalorganic vapor phase epitaxy

First-principles study of atomic and electronic structure of Bi/InP (001)- α 2 (2 × 4) and β 2 (2 × 4) surfaces

Comprehensive study of the structural, optical and electrical properties of InAlAs: Mg films lattice matched to InP grown by MOVPE

Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy

TEMPERATURE DEPENDENCE ON THE MORPHOLOGICAL EVOLUTION OF DILUTE InAsBi/GaAs NANOSTRUCTURES GROWN BY METALORGANIC VAPOR PHASE EPITAXY

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