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Evidence of the Zn vacancy acting as the dominant acceptor in n-type ZnO

Physical review letters, 2003-11, Vol.91 (20), p.205502-205502, Article 205502

2003

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Formation of thermal vacancies in highly As and P doped Si

Physical review letters, 2004-12, Vol.93 (25), p.255502.1-255502.4, Article 255502

2004

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Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy

Applied physics letters, 2003-05, Vol.82 (20), p.3433-3435

2003

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Formation of vacancy-impurity complexes by kinetic processes in highly As-doped Si

Physical review letters, 2002-03, Vol.88 (10), p.105506-105506, Article 105506

2002

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Vacancy-impurity complexes in highly Sb-doped Si grown by molecular beam epitaxy

Physical review letters, 2005-04, Vol.94 (16), p.165501.1-165501.4, Article 165501

2005

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Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers

Physical review. B, Condensed matter, 2001-01, Vol.63 (4), Article 045205

2001

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Positron trapping at thermal vacancies in highly As-doped Si

Physica. B, Condensed matter, 2006-04, Vol.376, p.189-192, Article 189

2006

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Identification of vacancy complexes in Si by positron annihilation

Journal of physics. Condensed matter, 2003-10, Vol.15 (39), p.S2791-S2801

2003

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Gallium and nitrogen vacancies in GaN: Impurity decoration effects

Physica. B, Condensed matter, 2006-04, Vol.376, p.424-427

2006

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Formation of vacancy-impurity complexes in highly As- and P-doped Si

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.765-768

2003

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Vacancies as compensating centers in bulk GaN: doping effects

Journal of crystal growth, 2002-12, Vol.246 (3), p.281-286

2002

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Target chamber for a slow positron beam: optimization of count rate and minimization of backscattering effects

Applied surface science, 2002-06, Vol.194 (1), p.38-42

2002

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Dissociation of VGa-ON complexes in HVPE GaN by high pressure and high temperature annealing

Physica Status Solidi (b), 2006-06, Vol.243 (7), p.1436-1440

2006

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Dissociation of V Ga –O N complexes in HVPE GaN by high pressure and high temperature annealing

Physica status solidi. B, Basic research, 2006-06, Vol.243 (7), p.1436-1440

2006

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Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN

Physical review. B, Condensed matter and materials physics, 2007-10, Vol.76 (16), Article 165207

2007

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Observation of Ga vacancies and negative ions in undoped and Mg-doped GaN bulk crystals

Physica. B, Condensed matter, 1999-12, Vol.273-274, p.33-38

1999

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Formation of vacancy-impurity complexes by annealing elementary vacancies introduced by electron irradiation of As-, P-, and Sb-doped Si

Physical review. B, Condensed matter and materials physics, 2004-03, Vol.69 (11), Article 115205

2004

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Hybrid positioning system combining angle-based localization, pedestrian dead reckoning and map filtering

2010 International Conference on Indoor Positioning and Indoor Navigation, 2010, p.1-7

2010

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Electrical deactivation by vacancy-impurity complexes in highly As-doped Si

Physical review. B, Condensed matter, 2003, Vol.67 (4), Article 041201

2003

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Direct evidence of impurity decoration of Ga vacancies in GaN from positron annihilation spectroscopy

Physical review. B, Condensed matter and materials physics, 2006-05, Vol.73 (19), Article 193301

2006

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Formation of vacancy-impurity complexes in highly As- and P-doped Si

Physica. B, Condensed matter, 2003, Vol.340-42, p.765-768

2003

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Positron trapping at thermal vacancies in highly As-doped Si

Physica. B, Condensed matter, 2006, Vol.376-77, p.189-192

2006

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Publisher’s Note: “Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy” [Appl. Phys. Lett. 82 , 3433 (2003)]

Applied physics letters, 2003-06, Vol.82 (25), p.4611-4611

2003

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Angle-based indoor positioning system for open indoor environments

2009 6th Workshop on Positioning, Navigation and Communication, 2009, p.261-265

2009

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Gallium and nitrogen vacancies in GaN : Impurity decoration effects

Physica. B, Condensed matter, 2006, Vol.376-77, p.424-427

2006

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Evidence of the Zn vacancy acting as the dominant acceptor in n-type ZnO

Formation of thermal vacancies in highly As and P doped Si

Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy

Formation of vacancy-impurity complexes by kinetic processes in highly As-doped Si

Vacancy-impurity complexes in highly Sb-doped Si grown by molecular beam epitaxy

Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers

Positron trapping at thermal vacancies in highly As-doped Si

Identification of vacancy complexes in Si by positron annihilation

Gallium and nitrogen vacancies in GaN: Impurity decoration effects

Formation of vacancy-impurity complexes in highly As- and P-doped Si

Vacancies as compensating centers in bulk GaN: doping effects

Target chamber for a slow positron beam: optimization of count rate and minimization of backscattering effects

Dissociation of VGa-ON complexes in HVPE GaN by high pressure and high temperature annealing

Dissociation of V Ga –O N complexes in HVPE GaN by high pressure and high temperature annealing

Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN

Observation of Ga vacancies and negative ions in undoped and Mg-doped GaN bulk crystals

Formation of vacancy-impurity complexes by annealing elementary vacancies introduced by electron irradiation of As-, P-, and Sb-doped Si

Hybrid positioning system combining angle-based localization, pedestrian dead reckoning and map filtering

Electrical deactivation by vacancy-impurity complexes in highly As-doped Si

Direct evidence of impurity decoration of Ga vacancies in GaN from positron annihilation spectroscopy

Formation of vacancy-impurity complexes in highly As- and P-doped Si

Positron trapping at thermal vacancies in highly As-doped Si

Publisher’s Note: “Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy” [Appl. Phys. Lett. 82 , 3433 (2003)]

Angle-based indoor positioning system for open indoor environments

Gallium and nitrogen vacancies in GaN : Impurity decoration effects

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