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Gettering of Copper and Nickel in p/p+ Epitaxial Wafers

Journal of the Electrochemical Society, 2000-07, Vol.147 (7), p.2704

2000

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High pressure synthesis of molybdenum nitride MoN

Journal of alloys and compounds, 2000-01, Vol.296 (1), p.72-74

2000

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Synthesis and X-ray Crystal Structure of trans,cis-[Pt(OAc)2I2(en)]: A Novel Type of Cisplatin Analog That Can Be Photolyzed by Visible Light to DNA-Binding and Cytotoxic Species in Vitro

Journal of medicinal chemistry, 1996-06, Vol.39 (13), p.2499-2507

1996

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Integrity of ultrathin gate oxides with different oxide thickness, substrate wafers and metallic contaminations

Applied physics. A, Materials science & processing, 2001-03, Vol.72 (3), p.351-356

2001

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Ni reactions with surfaces: dependence of gettering efficiencies for Ni on crystal-growth conditions, back-side-gettering techniques, oxygen precipitates and thermal treatments

Applied physics. A, Materials science & processing, 2002-05, Vol.74 (5), p.711-718

2002

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Modeling of Cu gettering in p- and n-type silicon and in poly-silicon

Applied physics. A, Materials science & processing, 2002-10, Vol.75 (4), p.525-534

2002

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Gettering efficiencies for Cu and Ni as a function of size and density of oxygen precipitates in p/p- silicon epitaxial wafers

Applied physics. A, Materials science & processing, 2001-08, Vol.73 (2), p.137-142

2001

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MeV-boron implanted layer, oxygen precipitates and poly-silicon back side combined in one silicon wafer: at what defect will Cu and Ni be gettered?

Applied physics. A, Materials science & processing, 2002-04, Vol.74 (4), p.545-551

2002

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Gettering efficiencies of polysilicon-, stacking fault- and He-implanted backsides for Cu and Ni

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-04, Vol.73 (1), p.95-98

2000

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Raman spectra of the barium oxide peroxide and strontium oxide peroxide series

Journal of Raman spectroscopy, 1998-02, Vol.29 (2), p.109-113

1998

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The linkage between macroscopic gettering mechanisms and electronic configuration of 3d-elements in p/p+ epitaxial silicon wafers

Applied physics. A, Materials science & processing, 2002, Vol.74 (1), p.35-39

2002

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Enhancement of gettering efficiencies of different silicon substrates during a 0.18 μm LTB CMOS process simulation –: Stratigraphy by a novel chemical ultra-trace depth-profiling

Microelectronic engineering, 2001-05, Vol.56 (1), p.153-156

2001

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High Temperature Powder X-Ray Diffraction of MZnPO4 Compounds (M = Na, K, Tl)

Materials science forum, 2001-10, Vol.378-381, p.659-664

2001

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Ba–Ca–Cu oxycarbonate thin films, prepared by pulsed laser deposition: structure, growth mechanism and superconducting properties

Physica. C, Superconductivity, 1999-02, Vol.312 (3), p.225-232

1999

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Calibrated Contamination Spiking Method for Silicon Wafers in the 1010 – 1012 Atom / cm2 Range

Journal of the Electrochemical Society, 1999-06, Vol.146 (6), p.2245-2253

1999

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Arene-Arene Stacking in cis-Bis[2-(2-thienyl-C3)pyridine-N]platinum(II)

Acta crystallographica. Section C, Crystal structure communications, 1997-05, Vol.53 (5), p.562-565

1997

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Crystal structure of nickel tin sulfide (3/2/2), Ni3Sn2S2

Zeitschrift für Kristallographie. Crystalline materials, 1997-01, Vol.212 (1)

1997

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Nonstereospecific 1,3-Dipolar Cycloaddition Reactions of Azomethine Ylides: Proof of the Structures for Four Diastereoisomeric [3+2] Cycloadducts

Acta crystallographica. Section C, Crystal structure communications, 1998-04, Vol.54 (4), p.509-513

1998

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Diammonium trimolybdate(VI), (NH4)2Mo3O10

Acta crystallographica. Section C, Crystal structure communications, 1990-03, Vol.46 (3), p.488-489

1990

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Synthesis and thermodynamic characteristics of LaSrNiO4

Thermochimica acta, 1998-10, Vol.319 (1-2), p.1-5

1998

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Iron and Its Detrimental Impact on the Nucleation and Growth of Oxygen Precipitates during Internal Gettering Processes

Journal of the Electrochemical Society, 1992-11, Vol.139 (11), p.3250-3254

1992

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Correlation Between DLTS and TRXFA Measurements of Copper and Iron Contaminations in FZ and CZ Silicon Wafers; Application to Gettering Efficiencies

Journal of the Electrochemical Society, 1992-05, Vol.139 (5), p.1495-1498

1992

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The crystal structure of β-Thallium perrhenate

Zeitschrift für anorganische und allgemeine Chemie (1950), 1993-06, Vol.619 (6), p.1017-1022

1993

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Comparison of different gettering techniques for Cu- p+ versus polysilicon and oxygen precipitates

Applied physics. A, Materials science & processing, 2002-11, Vol.75 (5), p.591-595

2002

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Structure of 5,5',6,6'-tetraphenyl-3,3'-bi-1,2,4-triazine

Acta crystallographica. Section C, Crystal structure communications, 1993-08, Vol.49 (8), p.1541-1543

1993

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Gettering of Copper and Nickel in p/p+ Epitaxial Wafers

High pressure synthesis of molybdenum nitride MoN

Synthesis and X-ray Crystal Structure of trans,cis-[Pt(OAc)2I2(en)]: A Novel Type of Cisplatin Analog That Can Be Photolyzed by Visible Light to DNA-Binding and Cytotoxic Species in Vitro

Integrity of ultrathin gate oxides with different oxide thickness, substrate wafers and metallic contaminations

Ni reactions with surfaces: dependence of gettering efficiencies for Ni on crystal-growth conditions, back-side-gettering techniques, oxygen precipitates and thermal treatments

Modeling of Cu gettering in p- and n-type silicon and in poly-silicon

Gettering efficiencies for Cu and Ni as a function of size and density of oxygen precipitates in p/p- silicon epitaxial wafers

MeV-boron implanted layer, oxygen precipitates and poly-silicon back side combined in one silicon wafer: at what defect will Cu and Ni be gettered?

Gettering efficiencies of polysilicon-, stacking fault- and He-implanted backsides for Cu and Ni

Raman spectra of the barium oxide peroxide and strontium oxide peroxide series

The linkage between macroscopic gettering mechanisms and electronic configuration of 3d-elements in p/p+ epitaxial silicon wafers

Enhancement of gettering efficiencies of different silicon substrates during a 0.18 μm LTB CMOS process simulation –: Stratigraphy by a novel chemical ultra-trace depth-profiling

High Temperature Powder X-Ray Diffraction of MZnPO4 Compounds (M = Na, K, Tl)

Ba–Ca–Cu oxycarbonate thin films, prepared by pulsed laser deposition: structure, growth mechanism and superconducting properties

Calibrated Contamination Spiking Method for Silicon Wafers in the 1010 – 1012 Atom / cm2 Range

Arene-Arene Stacking in cis-Bis[2-(2-thienyl-C3)pyridine-N]platinum(II)

Crystal structure of nickel tin sulfide (3/2/2), Ni3Sn2S2

Nonstereospecific 1,3-Dipolar Cycloaddition Reactions of Azomethine Ylides: Proof of the Structures for Four Diastereoisomeric [3+2] Cycloadducts

Diammonium trimolybdate(VI), (NH4)2Mo3O10

Synthesis and thermodynamic characteristics of LaSrNiO4

Iron and Its Detrimental Impact on the Nucleation and Growth of Oxygen Precipitates during Internal Gettering Processes

Correlation Between DLTS and TRXFA Measurements of Copper and Iron Contaminations in FZ and CZ Silicon Wafers; Application to Gettering Efficiencies

The crystal structure of β-Thallium perrhenate

Comparison of different gettering techniques for Cu- p+ versus polysilicon and oxygen precipitates

Structure of 5,5',6,6'-tetraphenyl-3,3'-bi-1,2,4-triazine

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