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Experimental study of the orientation dependence of indium incorporation in GaInN

Journal of crystal growth, 2016-01, Vol.433, p.7-12

2016

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Optical absorption of Mg-doped layers and InGaN quantum wells on c-plane and semipolar GaN structures

Journal of applied physics, 2013-05, Vol.113 (20)

2013

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Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar ( 11 2 ¯ 2 ) GaN free standing substrates

Applied physics letters, 2009-12, Vol.95 (25), p.251905-251905-3

2009

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Quantum cascade emission in the III-nitride material system designed with effective interface grading

Applied physics letters, 2015-09, Vol.107 (13)

2015

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III-nitride quantum cascade detector grown by metal organic chemical vapor deposition

Applied physics letters, 2014-11, Vol.105 (18)

2014

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Antibiogram of Urinary Enterococcus Isolates from a Tertiary Care Hospital

Infectious disorders drug targets, 2021, Vol.21 (1), p.146-150

2021

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Development of semipolar laser diode

Physica status solidi. A, Applications and materials science, 2013-03, Vol.210 (3), p.459-465

2013

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Impact of Carrier Transport on Aquamarine–Green Laser Performance

Applied physics express, 2010-12, Vol.3 (12), p.122101

2010

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Internal Optical Waveguide Loss and p-Type Absorption in Blue and Green InGaN Quantum Well Laser Diodes

Applied physics express, 2010-12, Vol.3 (12), p.122104

2010

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Reply to “Comments on ʻExperimental study of the orientation dependence of indium incorporation in GaInN’” by Morteza Monavarian

Journal of crystal growth, 2016-07, Vol.445, p.108-109

2016

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Optical gain and gain saturation of blue-green InGaN quantum wells

Physica status solidi. A, Applications and materials science, 2010-06, Vol.207 (6), p.1309-1312

2010

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Alloy disorder effects on the room temperature optical properties of Ga1−xInxNyAs1−y quantum wells

Applied physics letters, 2006-07, Vol.89 (3)

2006

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Lasing and optical gain around 500 nm from optically pumped lasers grown on c-plane GaN substrates

Optics letters, 2009-02, Vol.34 (3), p.328

2009

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Gallium Indium Nitride-Based Green Lasers

Journal of lightwave technology, 2012-03, Vol.30 (5), p.679-699

2012

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500-nm Optical Gain Anisotropy of Semipolar (11\bar22) InGaN Quantum Wells

Applied physics express, 2009-07, Vol.2, p.71001

2009

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A study of the growth rate of GaSb using TEGa and TMSb or TESb

Journal of crystal growth, 2015-09, Vol.426, p.82-85

2015

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Current status of selective area epitaxy by OMCVD

Journal of crystal growth, 1992-05, Vol.120 (1), p.362-368

Bhat, Rajaram

1992

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Carrier Transport in InGaN MQWs of Aquamarine- and Green-Laser Diodes

IEEE journal of selected topics in quantum electronics, 2011-09, Vol.17 (5), p.1390-1401

2011

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Reliability and degradation of InAlGaN semipolar $(20\bar{2}1)$ plane green lasers with relaxed InGaN waveguide core

Applied physics express, 2014-11, Vol.7 (11), p.112701

2014

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A study on the reliability of indium solder die bonding of high power semiconductor lasers

Journal of applied physics, 2006-07, Vol.100 (1), p.013104-013104-11

2006

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Preface

Journal of crystal growth, 2011-01, Vol.315 (1), p.xi

2011

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Preface

Journal of crystal growth, 2006-01, Vol.287 (2), p.531

2006

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Variation of the morphology of strained AlGaInAs quantum wells with substrate orientation

Journal of crystal growth, 2008-04, Vol.310 (7), p.2345-2352

2008

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Three-dimensional interface roughness in layered semiconductor structures and its effect on intersubband transitions

Physical review. B, 2016-10, Vol.94 (16), p.165307, Article 165307

2016

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60 mW Pulsed and Continuous Wave Operation of GaN-Based Semipolar Green Laser with Characteristic Temperature of 190 K

Applied physics express, 2011-10, Vol.4 (10), p.102103

2011

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Experimental study of the orientation dependence of indium incorporation in GaInN

Optical absorption of Mg-doped layers and InGaN quantum wells on c-plane and semipolar GaN structures

Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar ( 11 2 ¯ 2 ) GaN free standing substrates

Quantum cascade emission in the III-nitride material system designed with effective interface grading

III-nitride quantum cascade detector grown by metal organic chemical vapor deposition

Antibiogram of Urinary Enterococcus Isolates from a Tertiary Care Hospital

Development of semipolar laser diode

Impact of Carrier Transport on Aquamarine–Green Laser Performance

Internal Optical Waveguide Loss and p-Type Absorption in Blue and Green InGaN Quantum Well Laser Diodes

Reply to “Comments on ʻExperimental study of the orientation dependence of indium incorporation in GaInN’” by Morteza Monavarian

Optical gain and gain saturation of blue-green InGaN quantum wells

Alloy disorder effects on the room temperature optical properties of Ga1−xInxNyAs1−y quantum wells

Lasing and optical gain around 500 nm from optically pumped lasers grown on c-plane GaN substrates

Gallium Indium Nitride-Based Green Lasers

500-nm Optical Gain Anisotropy of Semipolar (11\bar22) InGaN Quantum Wells

A study of the growth rate of GaSb using TEGa and TMSb or TESb

Current status of selective area epitaxy by OMCVD

Carrier Transport in InGaN MQWs of Aquamarine- and Green-Laser Diodes

Reliability and degradation of InAlGaN semipolar $(20\bar{2}1)$ plane green lasers with relaxed InGaN waveguide core

A study on the reliability of indium solder die bonding of high power semiconductor lasers

Preface

Preface

Variation of the morphology of strained AlGaInAs quantum wells with substrate orientation

Three-dimensional interface roughness in layered semiconductor structures and its effect on intersubband transitions

60 mW Pulsed and Continuous Wave Operation of GaN-Based Semipolar Green Laser with Characteristic Temperature of 190 K

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