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Repeatable unipolar/bipolar resistive memory characteristics and switching mechanism using a Cu nanofilament in a GeOx film

Applied physics letters, 2012-08, Vol.101 (7), p.73106

2012

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Impact of TaOx nanolayer at the GeSex/W interface on resistive switching memory performance and investigation of Cu nanofilament

Journal of applied physics, 2012-03, Vol.111 (6)

2012

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Novel Defects-Trapping TaOX/HfOX RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current

IEEE electron device letters, 2014-02, Vol.35 (2), p.202-204

2014

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Nanoscale (EOT = 5.6 nm) nonvolatile memory characteristics using n-Si/SiO2/HfAlO nanocrystal/Al2O3/Pt capacitors

Nanotechnology, 2008-10, Vol.19 (43), p.435202-435202 (5)

2008

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Novel Defects-Trapping / RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current

IEEE electron device letters, 2014-02, Vol.35 (2), p.202-204

2014

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Impact of TaO x nanolayer at the GeSe x /W interface on resistive switching memory performance and investigation of Cu nanofilament

Journal of applied physics, 2012-03, Vol.111 (6), p.063710-063710-8

2012

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Bipolar Resistive Switching Memory Characteristics Using Al/Cu/GeO x /W Memristor

ECS transactions, 2012-04, Vol.45 (6), p.257-261

2012

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Low power resistive switching memory using Cu metallic filament in Ge sub(0.2)Se sub(0.8) solid-electrolyte

Microelectronics and reliability, 2010-05, Vol.50 (5), p.643-646

2010

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Low power resistive switching memory using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte: 2009 International Electron Devices and Materials Symposium (IEDMS)

Microelectronics and reliability, 2010, Vol.50 (5), p.643-646

2010

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Low power resistive switching memory using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte

Microelectronics and reliability, 2010-05, Vol.50 (5), p.643-646

2010

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Improved resistive switching memory characteristics using novel bi-layered Ge0.2Se0.8/Ta2O5 solid-electrolytes

2010 IEEE International Memory Workshop, 2010, p.1-4

2010

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Nanoscale (EOT = 5.6 nm) nonvolatile memory characteristics using n-Si/SiO(2)/HfAlO nanocrystal/Al(2)O(3)/Pt capacitors

Nanotechnology, 2008-10, Vol.19 (43), p.435202-435202

2008

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Nanoscale (EOT = 5.6 nm) nonvolatile memory characteristics using n-Si/SiO 2 / HfAlO nanocrystal/Al 2 O 3 / Ptcapacitors

Nanotechnology, 2008-10, Vol.19 (43), p.435202

2008

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Improved Resistive Switching Memory Characteristics Using Core-Shell IrO x Nano-Dots in Al 2 O 3 /WO x Bilayer Structure

Journal of the Electrochemical Society, 2011, Vol.159 (2), p.H177-H182

2011

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Highly robust self-compliant and nonlinear TaOX/HfOX RRAM for 3D vertical structure in 1TnR architecture

2015 International Symposium on VLSI Technology, Systems and Applications, 2015, p.1-2

2015

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Ti/HfO2 Based RRAM Operation Voltage Scaling for Embedded Memory

ECS transactions, 2013, Vol.52 (1), p.39-44

2013

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Low current bipolar resistive switching memory using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte

Proceedings of 2010 International Symposium on VLSI Technology, System and Application, 2010, p.134-135

2010

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Resistance instabilities in a filament-based resistive memory

2013 IEEE International Reliability Physics Symposium (IRPS), 2013, p.5E.1.1-5E.1.7

2013

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Bipolar Resistive Switching Memory Using Cu Metallic Filament in Ge[sub 0.4]Se[sub 0.6] Solid Electrolyte

Electrochemical and solid-state letters, 2010, Vol.13 (5), p.H159

2010

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Bipolar Resistive Switching Characteristics Using Al/Cu/GeO x /W Memristors

Meeting abstracts (Electrochemical Society), 2012-04, Vol.MA2012-01 (20), p.889-889

2012

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Development of Highly Manufacturable, Reliable, and Energy-Efficient Spin-Orbit Torque Magnetic Random Access Memory (SOT-MRAM)

2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2022, p.1-2

2022

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A Large Dynamic Range Current Sensor Using Magnetic Tunnel Junction on 8" Si process line

2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2019, p.1-2

2019

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Vertical resistive switching memory (VRRAM): A real 3D device demonstration and analysis of high-density application

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2014, p.1-2

2014

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Scalability issue in Ti/HfO bipolar resistive memory with 1T-1R configuration by resistance pinning effect during 1st RESET and its solution

2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2013, p.1-2

2013

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Excellent resistive switching memory: Influence of GeOx in WOx mixture

Proceedings of Technical Program of 2012 VLSI Technology, System and Application, 2012, p.1-2

2012

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Repeatable unipolar/bipolar resistive memory characteristics and switching mechanism using a Cu nanofilament in a GeOx film

Impact of TaOx nanolayer at the GeSex/W interface on resistive switching memory performance and investigation of Cu nanofilament

Novel Defects-Trapping TaOX/HfOX RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current

Nanoscale (EOT = 5.6 nm) nonvolatile memory characteristics using n-Si/SiO2/HfAlO nanocrystal/Al2O3/Pt capacitors

Novel Defects-Trapping / RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current

Impact of TaO x nanolayer at the GeSe x /W interface on resistive switching memory performance and investigation of Cu nanofilament

Bipolar Resistive Switching Memory Characteristics Using Al/Cu/GeO x /W Memristor

Low power resistive switching memory using Cu metallic filament in Ge sub(0.2)Se sub(0.8) solid-electrolyte

Low power resistive switching memory using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte: 2009 International Electron Devices and Materials Symposium (IEDMS)

Low power resistive switching memory using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte

Improved resistive switching memory characteristics using novel bi-layered Ge0.2Se0.8/Ta2O5 solid-electrolytes

Nanoscale (EOT = 5.6 nm) nonvolatile memory characteristics using n-Si/SiO(2)/HfAlO nanocrystal/Al(2)O(3)/Pt capacitors

Nanoscale (EOT = 5.6 nm) nonvolatile memory characteristics using n-Si/SiO 2 / HfAlO nanocrystal/Al 2 O 3 / Ptcapacitors

Improved Resistive Switching Memory Characteristics Using Core-Shell IrO x Nano-Dots in Al 2 O 3 /WO x Bilayer Structure

Highly robust self-compliant and nonlinear TaOX/HfOX RRAM for 3D vertical structure in 1TnR architecture

Ti/HfO2 Based RRAM Operation Voltage Scaling for Embedded Memory

Low current bipolar resistive switching memory using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte

Resistance instabilities in a filament-based resistive memory

Bipolar Resistive Switching Memory Using Cu Metallic Filament in Ge[sub 0.4]Se[sub 0.6] Solid Electrolyte

Bipolar Resistive Switching Characteristics Using Al/Cu/GeO x /W Memristors

Development of Highly Manufacturable, Reliable, and Energy-Efficient Spin-Orbit Torque Magnetic Random Access Memory (SOT-MRAM)

A Large Dynamic Range Current Sensor Using Magnetic Tunnel Junction on 8" Si process line

Vertical resistive switching memory (VRRAM): A real 3D device demonstration and analysis of high-density application

Scalability issue in Ti/HfO bipolar resistive memory with 1T-1R configuration by resistance pinning effect during 1st RESET and its solution

Excellent resistive switching memory: Influence of GeOx in WOx mixture

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