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Germline transformation of the malaria vector, Anopheles gambiae, with the piggyBac transposable element

Insect molecular biology, 2001-12, Vol.10 (6), p.597-604

2001

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Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

Journal of applied physics, 1997-05, Vol.81 (9), p.6031-6050

1997

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B cluster formation and dissolution in Si: A scenario based on atomistic modeling

Applied physics letters, 1999-06, Vol.74 (24), p.3657-3659

1999

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B diffusion and clustering in ion implanted Si: The role of B cluster precursors

Applied physics letters, 1997-04, Vol.70 (17), p.2285-2287

1997

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Simulation of cluster evaporation and transient enhanced diffusion in silicon

Applied physics letters, 1996-04, Vol.68 (17), p.2395-2397

1996

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Activation and deactivation of implanted B in Si

Applied physics letters, 1999-08, Vol.75 (5), p.662-664

1999

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Field study of wind and traffic to test a street canyon pollution model

Environmental monitoring and assessment, 2000-02, Vol.60 (3), p.283-313

2000

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The role of the surface in transient enhanced diffusion

Applied physics letters, 1995-10, Vol.67 (16), p.2302-2304

1995

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Dose, Energy, and Ion Species Dependence of the Effective Plus Factor for Transient Enhanced Diffusion

Journal of the Electrochemical Society, 2000-09, Vol.147 (9), p.3494

2000

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Oxidation enhanced diffusion in Si B-doping superlattices and Si self-interstitial diffusivities

Applied physics letters, 1993-08, Vol.63 (5), p.639-641

1993

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Stable transformation of the yellow fever mosquito, Aedes aegypti, with the Hermes element from the housefly

Proceedings of the National Academy of Sciences - PNAS, 1998-03, Vol.95 (7), p.3743-3747

1998

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Binding energy of vacancies to clusters formed in Si by high-energy ion implantation

Applied physics letters, 2001-09, Vol.79 (13), p.1983-1985

2001

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Diffusion parameters of indium for silicon process modeling

Journal of applied physics, 1996-11, Vol.80 (9), p.4944-4947

1996

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Front-end process simulation

Solid-state electronics, 2000-05, Vol.44 (5), p.863-868

Rafferty, C.S

2000

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Electrical Properties of Cobalt and Copper Contamination in Processed Silicon

Journal of the Electrochemical Society, 2001-06, Vol.148 (6), p.G326

2001

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Effects of oxide interface traps and transient enhanced diffusion on the process modeling of PMOS devices

IEEE transactions on electron devices, 1996-07, Vol.43 (7), p.1144-1152

1996

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Influence of fluorine implant on boron diffusion: Determination of process modeling parameters

Journal of applied physics, 1995-04, Vol.77 (7), p.3056-3060

1995

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Device-level simulation of wave propagation along metal-insulator-semiconductor interconnects

IEEE transactions on microwave theory and techniques, 2002-04, Vol.50 (4), p.1127-1136

2002

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Plastic flow during thermal oxidation of silicon

Applied physics letters, 1989-04, Vol.54 (16), p.1516-1518

1989

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Enhanced low temperature electrical activation of B in Si

Applied physics letters, 2003-01, Vol.82 (2), p.215-217

2003

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Plastic analysis of cylinder oxidation

Applied physics letters, 1989-05, Vol.54 (18), p.1815-1817

1989

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Scaling the Si metal-oxide-semiconductor field-effect transistor into the 0.1-μm regime using vertical doping engineering

Applied physics letters, 1991-12, Vol.59 (25), p.3315-3317

1991

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Depth dependence of {311} defect dissolution

Applied physics letters, 2001-09, Vol.79 (10), p.1429-1431

2001

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The dose, energy, and time dependence of silicon self-implantation induced transient enhanced diffusion at 750 °C

Applied physics letters, 1996-09, Vol.69 (14), p.2113-2115

1996

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Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon

Applied physics letters, 2001-08, Vol.79 (9), p.1273-1275

2001

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Germline transformation of the malaria vector, Anopheles gambiae, with the piggyBac transposable element

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

B cluster formation and dissolution in Si: A scenario based on atomistic modeling

B diffusion and clustering in ion implanted Si: The role of B cluster precursors

Simulation of cluster evaporation and transient enhanced diffusion in silicon

Activation and deactivation of implanted B in Si

Field study of wind and traffic to test a street canyon pollution model

The role of the surface in transient enhanced diffusion

Dose, Energy, and Ion Species Dependence of the Effective Plus Factor for Transient Enhanced Diffusion

Oxidation enhanced diffusion in Si B-doping superlattices and Si self-interstitial diffusivities

Stable transformation of the yellow fever mosquito, Aedes aegypti, with the Hermes element from the housefly

Binding energy of vacancies to clusters formed in Si by high-energy ion implantation

Diffusion parameters of indium for silicon process modeling

Front-end process simulation

Electrical Properties of Cobalt and Copper Contamination in Processed Silicon

Effects of oxide interface traps and transient enhanced diffusion on the process modeling of PMOS devices

Influence of fluorine implant on boron diffusion: Determination of process modeling parameters

Device-level simulation of wave propagation along metal-insulator-semiconductor interconnects

Plastic flow during thermal oxidation of silicon

Enhanced low temperature electrical activation of B in Si

Plastic analysis of cylinder oxidation

Scaling the Si metal-oxide-semiconductor field-effect transistor into the 0.1-μm regime using vertical doping engineering

Depth dependence of {311} defect dissolution

The dose, energy, and time dependence of silicon self-implantation induced transient enhanced diffusion at 750 °C

Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon

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