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Magnetron sputtering process control by medium-frequency power supply parameter

Thin solid films, 2008-05, Vol.516 (14), p.4478-4482

2008

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Pulsed-DC selfsputtering of copper

Journal of physics. Conference series, 2008-03, Vol.100 (6), p.062004

2008

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Low temperature Si epitaxy in a vertical LPCVD batch reactor

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-04, Vol.73 (1), p.203-207

2000

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Separation of the bulk and surface components of recombination lifetime obtained with a single laser/microwave photoconductance technique

Journal of applied physics, 1992-10, Vol.72 (7), p.2873-2878

1992

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Bulk and surface components of recombination lifetime based on a two-laser microwave reflection technique

Journal of applied physics, 1991-05, Vol.69 (9), p.6495-6499

1991

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Noncontact energy level analysis of metallic impurities in silicon crystals

Applied physics letters, 1990-12, Vol.57 (26), p.2832-2834

1990

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Recombination at clean and decorated misfit dislocations

Applied physics letters, 1992-03, Vol.60 (9), p.1096-1098

1992

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The effect of bonded interface on electrical properties of bonded silicon-on-insulator wafers

Journal of applied physics, 1992-10, Vol.72 (8), p.3610-3616

1992

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Electron beam patterning of SiO2

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1992-07, Vol.10 (4), p.965-969

1992

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Electrical activity of dislocations : prospects for practical utilization

Applied Physics A Solids and Surfaces, 1991-09, Vol.53 (3), p.189-193

1991

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Enhanced surface/interface recombination and surface inversion of Ni decorated Si/Si(Ge)/Si heterostructures

Journal of applied physics, 1993-06, Vol.73 (12), p.8412-8418

1993

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Conductivity-type conversion in multiple-implant/multiple-anneal SOI

IEEE transactions on electron devices, 1991-01, Vol.38 (1), p.61-66

1991

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Pulsed dc self-sustained magnetron sputtering

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2008-09, Vol.26 (5), p.1277-1281

2008

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Depth-dependent imaging of dislocations in heteroepitaxial layers

Journal of applied physics, 1988-09, Vol.64 (5), p.2328-2333

1988

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Two classes of recombination behavior as studied by the technique of the electron beam induced current : NiSi2 particles and misfit dislocations in Ni contaminated n-type silicon

Applied physics letters, 1993-05, Vol.62 (20), p.2513-2515

1993

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Thermal wave imaging of misfit dislocations and correlation with minority carrier lifetime

Journal of crystal growth, 1990-06, Vol.103 (1), p.200-205

1990

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Structural and electrical properties of epitaxial Si on insulating substrates

Applied physics letters, 1989-08, Vol.55 (6), p.586-588

1989

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Correlation of modulated optical reflectance with silicon carrier lifetime and impurity concentration

Applied physics letters, 1990-03, Vol.56 (12), p.1169-1171

1990

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Cathodoluminescence and EBIC study on misfit dislocations in SiGe/Si heterostructure

Materials science & engineering. B, Solid-state materials for advanced technology, 1996-12, Vol.42 (1), p.141-145

1996

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Comparative studies of defects in GaAs on silicon substrates using electron-beam-induced current and transmission electron microscopy

Journal of applied physics, 1988-10, Vol.64 (7), p.3763-3765

1988

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Misfit stress relaxation phenomena in GaAsP-InGaAs strained-layer superlattices

Applied physics letters, 1988-05, Vol.52 (20), p.1692-1694

1988

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Low-voltage electron beam lithography

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1992-11, Vol.10 (6), p.3088-3093

1992

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Optical emission spectroscopy of high density metal plasma formed during magnetron sputtering

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1997-03, Vol.15 (2), p.202-208

1997

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Investigation on defects in Czochralski silicon with high-sensitive laser/microwave photoconductance technique

Japanese Journal of Applied Physics, 1993, Vol.32 (1B), p.298-302

1993

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Cu Deposition Characteristics into Submicron Contact Holes Employing Self-Sputtering With a High Ionization Rate

MRS proceedings, 1996, Vol.427, Article 185

1996

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Magnetron sputtering process control by medium-frequency power supply parameter

Pulsed-DC selfsputtering of copper

Low temperature Si epitaxy in a vertical LPCVD batch reactor

Separation of the bulk and surface components of recombination lifetime obtained with a single laser/microwave photoconductance technique

Bulk and surface components of recombination lifetime based on a two-laser microwave reflection technique

Noncontact energy level analysis of metallic impurities in silicon crystals

Recombination at clean and decorated misfit dislocations

The effect of bonded interface on electrical properties of bonded silicon-on-insulator wafers

Electron beam patterning of SiO2

Electrical activity of dislocations : prospects for practical utilization

Enhanced surface/interface recombination and surface inversion of Ni decorated Si/Si(Ge)/Si heterostructures

Conductivity-type conversion in multiple-implant/multiple-anneal SOI

Pulsed dc self-sustained magnetron sputtering

Depth-dependent imaging of dislocations in heteroepitaxial layers

Two classes of recombination behavior as studied by the technique of the electron beam induced current : NiSi2 particles and misfit dislocations in Ni contaminated n-type silicon

Thermal wave imaging of misfit dislocations and correlation with minority carrier lifetime

Structural and electrical properties of epitaxial Si on insulating substrates

Correlation of modulated optical reflectance with silicon carrier lifetime and impurity concentration

Cathodoluminescence and EBIC study on misfit dislocations in SiGe/Si heterostructure

Comparative studies of defects in GaAs on silicon substrates using electron-beam-induced current and transmission electron microscopy

Misfit stress relaxation phenomena in GaAsP-InGaAs strained-layer superlattices

Low-voltage electron beam lithography

Optical emission spectroscopy of high density metal plasma formed during magnetron sputtering

Investigation on defects in Czochralski silicon with high-sensitive laser/microwave photoconductance technique

Cu Deposition Characteristics into Submicron Contact Holes Employing Self-Sputtering With a High Ionization Rate

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