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Evaluation of Thin Film Titanium Nitride Electrodes for Electroanalytical Applications

Electroanalysis (New York, N.Y.), 2007-05, Vol.19 (10), p.1023-1031

2007

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First Principle Calculation of the Leakage Current Through \hbox and \hbox\hbox Gate Dielectrics in MOSFETs

IEEE transactions on electron devices, 2010-03, Vol.57 (3), p.690-695

2010

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Optical waveguide components with high refractive index difference in silicon-oxynitride for application in integrated optoelectronics

Optical engineering, 2002-01, Vol.41 (1), p.237

Schauwecker, Bernd

2002

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Interaction of oxygen vacancies and lanthanum in Hf-based high-k dielectrics: an ab initio investigation

Journal of physics. Condensed matter, 2011-09, Vol.23 (36), p.365502-5

2011

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The Degradation Process of High- k~/ Gate-Stacks: A Combined Experimental and First Principles Investigation

IEEE transactions on electron devices, 2014-05, Vol.61 (5), p.1278-1283

2014

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First Principle Calculation of the Leakage Current Through SiO 2 and SiO x N y Gate Dielectrics in MOSFETs

IEEE transactions on electron devices, 2010-03, Vol.57 (3), p.690-695

2010

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First Principle Calculation of the Leakage Current Through SiO 2 and SiO xN y Gate Dielectrics in MOSFETs

IEEE transactions on electron devices, 2010-03, Vol.57 (3), p.690-695

2010

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First Principle Calculation of the Leakage Current Through [Formula Omitted] and [Formula Omitted] Gate Dielectrics in MOSFETs

IEEE transactions on electron devices, 2010-03, Vol.57 (3), p.690

2010

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Silylation of silicon bonded hydroxyl groups by silazanes and siloxanes containing an acetoxy group. N-trimethylsilylimidazole vs. dimethyldiacetoxysilane

Computational and theoretical chemistry, 2012-07, Vol.991, p.44-47

2012

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First Principle Calculation of the Leakage Current Through Si02 and SiOxNy Gate Dielectrics in MOSFETs

IEEE transactions on electron devices, 2010, Vol.57 (3), p.690-695

2010

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k-Restoring Processes at Carbon Depleted Ultralow-k Surfaces

The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory, 2011-07, Vol.115 (29), p.8282-8287

2011

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Tunneling Effective Mass of Electrons in Lightly N-Doped SiOxNy Gate Insulators

IEEE transactions on electron devices, 2008-09, Vol.55 (9), p.2462-2468

2008

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Quasi One-Dimensional Arrangements of Au55(PPh3)12Cl6 Clusters and Their Electrical Properties at Room Temperature

Nano letters, 2001-08, Vol.1 (8), p.405-407

2001

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Small-size silicon-oxynitride AWG demultiplexer operating around 725 nm

IEEE photonics technology letters, 2000-12, Vol.12 (12), p.1645-1646

2000

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The Diode Behavior of Asymmetrically Ordered Au55 Clusters

Chemphyschem, 2001-09, Vol.2 (8-9), p.546-548

2001

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Quasi One-Dimensional Arrangements of Au 55 (PPh 3 ) 12 Cl 6 Clusters and Their Electrical Properties at Room Temperature

Nano letters, 2001-08, Vol.1 (8), p.405-407

2001

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Ab initio structural and electronic properties of dangling-bond-free SiO x N y

Physical review. B, Condensed matter and materials physics, 2006-04, Vol.73 (16), Article 165213

2006

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First-principles investigation of the leakage current through strained SiO2 gate dielectrics in MOSFETs

2011 Semiconductor Conference Dresden, 2011, p.1-4

2011

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Image transcription between arrays of N-p-n-P optoelectronic switches

IEEE transactions on electron devices, 1992-10, Vol.39 (10), p.2248-2253

1992

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Maximum detection with a two-dimensional optoelectronic p-n-p-n winner-take-all network

Applied Optics, 1992-10, Vol.31 (29), p.6303

1992

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Experimental Investigation of Spatial Pattern Formation in Physical Systems of Activator Inhibitor Type

Zeitschrift für Naturforschung. A, A journal of physical sciences, 1988-01, Vol.43 (1), p.17-29

1988

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Atomic Layer Etching of GaN and AlGaN Using CH 4 /H 2 , H 2 and HCl Chemistry

Meeting abstracts (Electrochemical Society), 2023-12, Vol.MA2023-02 (29), p.1468-1468

2023

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Evaluation of Thin Film Titanium Nitride Electrodes for Electroanalytical Applications

First Principle Calculation of the Leakage Current Through \hbox and \hbox\hbox Gate Dielectrics in MOSFETs

Optical waveguide components with high refractive index difference in silicon-oxynitride for application in integrated optoelectronics

Interaction of oxygen vacancies and lanthanum in Hf-based high-k dielectrics: an ab initio investigation

The Degradation Process of High- k~/ Gate-Stacks: A Combined Experimental and First Principles Investigation

First Principle Calculation of the Leakage Current Through SiO 2 and SiO x N y Gate Dielectrics in MOSFETs

First Principle Calculation of the Leakage Current Through SiO 2 and SiO xN y Gate Dielectrics in MOSFETs

First Principle Calculation of the Leakage Current Through [Formula Omitted] and [Formula Omitted] Gate Dielectrics in MOSFETs

Silylation of silicon bonded hydroxyl groups by silazanes and siloxanes containing an acetoxy group. N-trimethylsilylimidazole vs. dimethyldiacetoxysilane

First Principle Calculation of the Leakage Current Through Si02 and SiOxNy Gate Dielectrics in MOSFETs

k-Restoring Processes at Carbon Depleted Ultralow-k Surfaces

Tunneling Effective Mass of Electrons in Lightly N-Doped SiOxNy Gate Insulators

Quasi One-Dimensional Arrangements of Au55(PPh3)12Cl6 Clusters and Their Electrical Properties at Room Temperature

Small-size silicon-oxynitride AWG demultiplexer operating around 725 nm

The Diode Behavior of Asymmetrically Ordered Au55 Clusters

Quasi One-Dimensional Arrangements of Au 55 (PPh 3 ) 12 Cl 6 Clusters and Their Electrical Properties at Room Temperature

Ab initio structural and electronic properties of dangling-bond-free SiO x N y

First-principles investigation of the leakage current through strained SiO2 gate dielectrics in MOSFETs

Image transcription between arrays of N-p-n-P optoelectronic switches

Maximum detection with a two-dimensional optoelectronic p-n-p-n winner-take-all network

Experimental Investigation of Spatial Pattern Formation in Physical Systems of Activator Inhibitor Type

Atomic Layer Etching of GaN and AlGaN Using CH 4 /H 2 , H 2 and HCl Chemistry

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